Patent US5478429A successfully refreshed from Google Patents.
US5478429A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma process apparatus
Assignee: Tokyo Electron Ltd
•
Filing: 1994-01-19
•
Granted: 1995-12-26
•
Expires: 2014-01-19
Abstract
Abstract The present invention provides a plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, the apparatus having a process chamber, an upper electrode located in the process chamber and having a gas-supplying section for supplying a process gas, a lower electrode located in the process chamber, having a cooling means, and opposing the upper electrode, for supporting an object, and RF power supplying means electrically connected to the lower electrode, protruding from the process chamber and connected to a RF power supply, for supplying RF power between the upper and lower electrodes, wherein the RF power supplying means includes, an outer conductive pipe surrounding the inner conductive rod and spaced therefrom, and a fixing member inserted between the inner conductive rod and the outer conductive pipe and having concaves and convexes, the inner conductive rod and the outer conductive pipe being electrically connected to an RF power supply source.
Inventors
- 👤 Mitsuaki Komino
- 👤 Yoichi Ueda
- 👤 Youichi Deguchi
- 👤 Satoru Kawakami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:50
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32018; H01J37/32045; H01J37/321
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
163 words
A plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, said apparatus comprising: a process chamber; an upper electrode located in said process chamber and having a gas-supplying section for supplying a process gas; a lower electrode located in said process chamber, having a cooling means, and opposing said upper electrode, for supporting an object; and RF power supplying means electrically connected to said lower electrode, protruding from said process chamber and connected to a RF power supply, for supplying RF power between said upper and lower electrodes, wherein said RF power supplying means includes an inner conductive rod, an outer conductive pipe surrounding said inner conductive rod and spaced therefrom, and a fixing member inserted between said inner conductive rod and said outer conductive pipe and having concaves and convexes, said inner conductive rod and said outer conductive pipe being electrically connected to an RF power supply source.
Claim 2
Dependent Claim
163 words
A plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, said apparatus comprising: a process chamber; an upper electrode located in said process chamber and having a gas-supplying section for supplying a process gas; a lower electrode located in said process chamber, having a cooling means, and opposing said upper electrode, for supporting an object; and RF power supplying means electrically connected to said lower electrode, protruding from said process chamber and connected to a RF power supply, for supplying RF power between said upper and lower electrodes, wherein said RF power supplying means includes an inner conductive rod, an outer conductive pipe surrounding said inner conductive rod and spaced therefrom, and a fixing member inserted between said inner conductive rod and said outer conductive pipe and having concaves and convexes, said inner conductive rod and said outer conductive pipe being electrically connected to an RF power supply source.
Claim 3
Dependent Claim
47 words
The apparatus according to claim 1, wherein said fixing member extends along said inner conductive rod, and said concaves and convexes are formed at that portion of said fixing member which is exposed to a space defined by said inner conductive rod and said outer conductive pipe.
Claim 4
Dependent Claim
51 words
The apparatus according to claim 1, wherein that portion of said process chamber which is covered with an insulating member and which supports said lower electrode is formed of a plurality of members each having a concave, which are fastened together by fastening members fitted in the concaves of said members.
Claim 5
Dependent Claim
23 words
The apparatus according to claim 3, wherein each of said fastening members is made of an elastic body covered with a metal layer.
Claim 6
Dependent Claim
34 words
The apparatus according to claim 4, wherein each of said fastening member is in full contact with inner surfaces of the concaves of said members, due to a restoring force of said elastic body.
Claim 7
Dependent Claim
28 words
The apparatus according to claim 1, further comprising gas-introducing means for introducing dry gas into a space defined by said inner conductive rod and said outer conductive pipe.
Claim 8
Dependent Claim
17 words
The apparatus according to claim 1, further comprising heating means for heating said RF power supplying means.
Claim 9
Dependent Claim
30 words
The apparatus according to claim 1, further comprising an electrically insulating vessel connected to said RF power supplying means, for receiving water drops generated in said RF power supplying means.
Claim 10
Dependent Claim
33 words
The apparatus according to claim 1, further comprising exhaustion means secured to said outer conductive pipe, for reducing pressure in a space defined by said inner conductive rod and said outer conductive pipe.
Claim 11
Dependent Claim
229 words
A plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, said apparatus comprising: a process chamber; an upper electrode located in said process chamber and having a gas-supplying section for supplying a process gas; a lower electrode located in said process chamber, having a cooling means, and opposing said upper electrode, for supporting an object; RF power supplying means electrically connected to said lower electrode, protruding from said process chamber and connected to a RF power supply, for supplying RF power between said upper and lower electrodes; and impedance matching means for detecting an impedance difference between said RF power supply and said lower electrode and for adjusting at lest a variable capacitance, to thereby perform impedance matching, wherein said RF power supply includes a frequency changing section for changing an output frequency, and a control section for performing impedance matching by controlling the output power frequency, together with the variable capacitance, in accordance with the impedance difference detected between said RF power supply and said lower electrode, and said process chamber has a portion which is covered with an insulating member and which supports said lower electrode, said portion being formed of a plurality of members each having a concave, which are fastened together by fastening members fitted in the concaves of said members.
Claim 12
Dependent Claim
229 words
A plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, said apparatus comprising: a process chamber; an upper electrode located in said process chamber and having a gas-supplying section for supplying a process gas; a lower electrode located in said process chamber, having a cooling means, and opposing said upper electrode, for supporting an object; RF power supplying means electrically connected to said lower electrode, protruding from said process chamber and connected to a RF power supply, for supplying RF power between said upper and lower electrodes; and impedance matching means for detecting an impedance difference between said RF power supply and said lower electrode and for adjusting at lest a variable capacitance, to thereby perform impedance matching, wherein said RF power supply includes a frequency changing section for changing an output frequency, and a control section for performing impedance matching by controlling the output power frequency, together with the variable capacitance, in accordance with the impedance difference detected between said RF power supply and said lower electrode, and said process chamber has a portion which is covered with an insulating member and which supports said lower electrode, said portion being formed of a plurality of members each having a concave, which are fastened together by fastening members fitted in the concaves of said members.
Claim 13
Dependent Claim
44 words
The apparatus according to claim 10, wherein said RF supply means includes an inner conductive rod, and an outer conductive pipe surrounding said inner conductive rod, said inner conductive rod and said outer conductive pipe being electrically connected to an RF power supply source.
Claim 14
Dependent Claim
23 words
The apparatus according to claim 11, wherein each of said fastening members is made of an elastic body covered with a metal layer.
Claim 15
Dependent Claim
34 words
The apparatus according to claim 12, wherein each of said fastening member is in full contact with inner surfaces of the concaves of said members, due to a restoring force of said elastic body.
Claim 16
Dependent Claim
28 words
The apparatus according to claim 11, further comprising gas-introducing means for introducing dried gas into a space defined by said inner conductive rod and said outer conductive pipe.
Claim 17
Dependent Claim
33 words
The apparatus according to claim 11, further comprising exhaustion means secured to said outer conductive pipe, for reducing pressure in a space defined by said inner conductive rod and said outer conductive pipe.
Claim 18
Dependent Claim
17 words
The apparatus according to claim 10, further comprising heating means for heating said RF power supplying means.
Claim 19
Dependent Claim
30 words
The apparatus according to claim 10, further comprising an electrically insulating vessel connected to said RF power supplying means, for receiving water drops generated in said RF power supplying means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-25 | 1999-06-26 | 1999-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-25 | 2003-06-26 | 2003-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-25 | 2007-06-26 | 2007-12-26 | $7700.00 | Window Closed / Lapsed |