Apparatus for fabricating semiconductor devices

Abstract

Abstract A beam generating apparatus disposed in a vacuum processing chamber for processing a substrate for emitting activated beams into the processing chamber comprises a beam generating cell for generating the activated beams, the beam generating cell having a speculum contact surface, a gas introduction member for introducing gas into the beam generating cell, the gas introduction member having a speculum contact surface, a bellows members connected to the gas introduction member, for pressing the contact surface of the gas introduction member against the contact surface of the beam generating cell so as to vacuum-seal a contact between the beam generating cell and the gas introduction member. At this contact both members are pressed against each other by the resiliency of the bellows, and accordingly higher air-tightness can be provided. A method for fabricating a semiconductor device comprises the steps of heating a silicon substrate to a temperature below 700° C., and irradiating neutral oxygen radical beams and neutral hydrogen radical beams to a surface of the silicon substrate to form a silicon oxide layer on the silicon substrate. Both oxygen and hydrogen are irradiated as radical beams to a silicon substrate to produce radical water molecules on the surface of the silicon substrate. Accordingly silicon oxide layers of high purity can be formed at low temperatures on silicon substrates without damaging the silicon substrates.

Inventors

• 👤 Noriyoshi Shimizu

Bibliographic Details