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US5475280A
Expired / Lapsed
US
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Vertical microelectronic field emission devices
Assignee: eMagin Corp
•
Filing: 1994-08-30
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Granted: 1995-12-12
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Expires: 2014-08-30
Abstract
Abstract A vertical microelectronic field emitter includes a conductive top portion and a resistive bottom portion in an elongated column which extends vertically from a horizontal substrate. An emitting electrode may be formed at the base of the column, and an extraction electrode may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.
Inventors
- 👤 Gary W. Jones
- 👤 Ching-Tzong Sune
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:29
CPC Classifications
H; H01; H01J; H01J3/00; H01J3/02; H01J3/021; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J2201/00; H01J2201/30; H01J2201/319
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
75 words
A microelectronic field emitter comprising: a substrate; an elongated vertical pillar on said substrate, extending therefrom, said pillar having a wall, a resistive bottom portion adjacent said substrate and a conductive top portion opposite said substrate; an electron emitting element on said conductive top portion; an insulating layer on said substrate, extending adjacent said wall; and at least one electrode on said insulating layer, extending proximate to said electron emitting element, for extracting electrons therefrom.
Claim 2
Dependent Claim
75 words
A microelectronic field emitter comprising: a substrate; an elongated vertical pillar on said substrate, extending therefrom, said pillar having a wall, a resistive bottom portion adjacent said substrate and a conductive top portion opposite said substrate; an electron emitting element on said conductive top portion; an insulating layer on said substrate, extending adjacent said wall; and at least one electrode on said insulating layer, extending proximate to said electron emitting element, for extracting electrons therefrom.
Claim 3
Dependent Claim
16 words
The microelectronic field emitter of claim 1 wherein said resistive bottom portion comprises gold-doped amorphous silicon.
Claim 4
Dependent Claim
14 words
The microelectronic field emitter of claim 2 wherein said conductive top portion comprises titanium.
Claim 5
Dependent Claim
33 words
The microelectronic field emitter of claim 1 wherein said at least one electrode on said insulating layer further extends beyond said insulating layer, to overhang said insulating layer adjacent said electron emitting element.
Claim 6
Dependent Claim
20 words
The microelectronic field emitter of claim 1 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.
Claim 7
Dependent Claim
25 words
The microelectronic field emitter of claim 1 wherein said electron emitting element comprises a layer of low work function material on said conductive top portion.
Claim 8
Dependent Claim
27 words
The microelectronic field emitter of claim 1 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.
Claim 9
Dependent Claim
15 words
The microelectronic field emitter of claim 1 further comprising a coating layer on said wall.
Claim 10
Dependent Claim
23 words
The microelectronic field emitter of claim 1 further comprising an envelope over said electron emitting element, and spaced therefrom, for encapsulating said emitter.
Claim 11
Dependent Claim
25 words
The microelectronic field emitter of claim 9 wherein said envelope includes at least one electrical device comprising an active device, collector, interconnect or display grid.
Claim 12
Dependent Claim
22 words
The microelectronic field emitter of claim 9 wherein said envelope includes at least one electrical connection to said at least one electrode.
Claim 13
Dependent Claim
23 words
The microelectronic field emitter of claim 9 wherein said envelope includes at least one insulating layer and at least one conductive layer therein.
Claim 14
Dependent Claim
27 words
The microelectronic field emitter of claim 1 wherein said field emitter further comprises an address line at the base of said column, adjacent said bottom resistive portion.
Claim 15
Dependent Claim
26 words
The microelectronic field emitter of claim 1 wherein said at least one electrode comprises first and second conductive portions which are electrically insulated from one another.
Claim 16
Dependent Claim
102 words
A microelectronic field emitter array comprising: a substrate; an array of elongated vertical pillars on said substrate, orthogonally extending therefrom, each pillar having a wall, a conductive top portion opposite said substrate and a resistive bottom portion adjacent said substrate; an electron emitting element on said each top portion; an insulating layer on said substrate, between said vertical pillars, extending adjacent said walls; an extraction electrode on said insulating layer, extending parallel to said substrate, and proximate to said electron emitting element; and an emitter address line electrode adjacent said resistive bottom portion and electrically connected thereto, extending parallel to said substrate.
Claim 17
Dependent Claim
102 words
A microelectronic field emitter array comprising: a substrate; an array of elongated vertical pillars on said substrate, orthogonally extending therefrom, each pillar having a wall, a conductive top portion opposite said substrate and a resistive bottom portion adjacent said substrate; an electron emitting element on said each top portion; an insulating layer on said substrate, between said vertical pillars, extending adjacent said walls; an extraction electrode on said insulating layer, extending parallel to said substrate, and proximate to said electron emitting element; and an emitter address line electrode adjacent said resistive bottom portion and electrically connected thereto, extending parallel to said substrate.
Claim 18
Dependent Claim
16 words
The microelectronic field emitter of claim 15 wherein said resistive bottom portion comprises gold-doped amorphous silicon.
Claim 19
Dependent Claim
14 words
The microelectronic field emitter of claim 16 wherein said conductive top portion comprises titanium.
Claim 20
Dependent Claim
31 words
The microelectronic field emitter of claim 15 wherein said extraction electrode on said insulating layer further extends beyond said insulating layer to overhang said insulating layer, adjacent said electron emission surface.
Claim 21
Dependent Claim
20 words
The microelectronic field emitter of claim 15 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.
Claim 22
Dependent Claim
25 words
The microelectronic field emitter of claim 15 wherein said electron emitting element comprises a layer of low work function material on said conductive top portion.
Claim 23
Dependent Claim
27 words
The microelectronic field emitter of claim 15 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.
Claim 24
Dependent Claim
22 words
The microelectronic field emitter of claim 15 further comprising a coating layer on said walls, between said insulating layer and said walls.
Claim 25
Dependent Claim
25 words
The microelectronic field emitter of claim 15 further comprising an envelope over said field emitter array, and spaced therefrom, for encapsulating said field emitting array.
Claim 26
Dependent Claim
25 words
The microelectronic field emitter of claim 23 wherein said envelope includes at least one electrical device comprising an active device, collector, interconnect or display grid.
Claim 27
Dependent Claim
24 words
The microelectronic field emitter of claim 23 wherein said envelope further comprises a plurality of partitions therein, for forming a plurality of encapsulation chambers.
Claim 28
Dependent Claim
80 words
A microelectronic field emitter comprising: a substrate; an elongated vertical pillar on said substrate, extending therefrom, said pillar having a wall, a top portion comprising an electron emitting element, a resistive bottom portion adjacent said substrate and a conductive intermediate portion between said resistive bottom portion and said top portion; an insulating layer on said substrate, extending adjacent said wall; and at least one electrode on said insulating layer, extending proximate to said electron emitting element, for extracting electrons therefrom.
Claim 29
Dependent Claim
80 words
A microelectronic field emitter comprising: a substrate; an elongated vertical pillar on said substrate, extending therefrom, said pillar having a wall, a top portion comprising an electron emitting element, a resistive bottom portion adjacent said substrate and a conductive intermediate portion between said resistive bottom portion and said top portion; an insulating layer on said substrate, extending adjacent said wall; and at least one electrode on said insulating layer, extending proximate to said electron emitting element, for extracting electrons therefrom.
Claim 30
Dependent Claim
16 words
The microelectronic field emitter of claim 26 wherein said resistive bottom portion comprises gold-doped amorphous silicon.
Claim 31
Dependent Claim
14 words
The microelectronic field emitter of claim 27 wherein said conductive intermediate portion comprises titanium.
Claim 32
Dependent Claim
33 words
The microelectronic field emitter of claim 26 wherein said at least one electrode on said insulating layer further extends beyond said insulating layer, to overhang said insulating layer adjacent said electron emitting element.
Claim 33
Dependent Claim
20 words
The microelectronic field emitter of claim 26 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.
Claim 34
Dependent Claim
20 words
The microelectronic field emitter of claim 26 wherein said electron emitting element comprises a layer of low work function material.
Claim 35
Dependent Claim
27 words
The microelectronic field emitter of claim 26 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.
Claim 36
Dependent Claim
23 words
The microelectronic field emitter of claim 26 further comprising an envelope over said electron emitting element, and spaced therefrom, for encapsulating said emitter.
Claim 37
Dependent Claim
22 words
The microelectronic field emitter of claim 23 wherein said envelope includes at least one electrical connection to said at least one electrode.
Claim 38
Dependent Claim
23 words
The microelectronic field emitter of claim 33 wherein said envelope includes at least one insulating layer and at least one conductive layer therein.
Claim 39
Dependent Claim
27 words
The microelectronic field emitter of claim 26 wherein said field emitter further comprises an address line at the base of said column, adjacent said bottom resistive portion.
Claim 40
Dependent Claim
26 words
The microelectronic field emitter of claim 26 wherein said at least one electrode comprises first and second conductive portions which are electrically insulated from one another.
Claim 41
Dependent Claim
109 words
A microelectronic field emitter array comprising: a substrate; an array of elongated vertical pillars on said substrate, orthogonally extending therefrom, each pillar having a wall, a top portion comprising an electron emitting element, a conductive intermediate portion between said top portion and said substrate and a resistive bottom portion between said intermediate portion and said substrate; an insulating layer on said substrate, between said vertical pillars, extending adjacent said walls; an extraction electrode on said insulating layer, extending parallel to said substrate, and proximate to said electron emitting element; and an emitter address line electrode adjacent said resistive bottom portion and electrically connected thereto, extending parallel to said substrate.
Claim 42
Dependent Claim
109 words
A microelectronic field emitter array comprising: a substrate; an array of elongated vertical pillars on said substrate, orthogonally extending therefrom, each pillar having a wall, a top portion comprising an electron emitting element, a conductive intermediate portion between said top portion and said substrate and a resistive bottom portion between said intermediate portion and said substrate; an insulating layer on said substrate, between said vertical pillars, extending adjacent said walls; an extraction electrode on said insulating layer, extending parallel to said substrate, and proximate to said electron emitting element; and an emitter address line electrode adjacent said resistive bottom portion and electrically connected thereto, extending parallel to said substrate.
Claim 43
Dependent Claim
16 words
The microelectronic field emitter of claim 38 wherein said resistive bottom portion comprises gold-doped amorphous silicon.
Claim 44
Dependent Claim
14 words
The microelectronic field emitter of claim 39 wherein said conductive intermediate portion comprises titanium.
Claim 45
Dependent Claim
31 words
The microelectronic field emitter of claim 38 wherein said extraction electrode on said insulating layer further extends beyond said insulating layer to overhang said insulating layer, adjacent said electron emitting element.
Claim 46
Dependent Claim
20 words
The microelectronic field emitter of claim 38 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.
Claim 47
Dependent Claim
20 words
The microelectronic field emitter of claim 38 wherein said electron emitting element comprises a layer of low work function material.
Claim 48
Dependent Claim
27 words
The microelectronic field emitter of claim 38 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.
Claim 49
Dependent Claim
25 words
The microelectronic field emitter of claim 38 further comprising an envelope over said field emitter array, and spaced therefrom, for encapsulating said field emitting array.
Claim 50
Dependent Claim
24 words
The microelectronic field emitter of claim 45 wherein said cover further comprises a plurality of partitions therein, for forming a plurality of encapsulation chambers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-11 | 1999-06-12 | 1999-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-11 | 2003-06-12 | 2003-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-11 | 2007-06-12 | 2007-12-12 | $7700.00 | Window Closed / Lapsed |