US5474591A
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US
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Method of synthesizing III-V semiconductor nanocrystals
Assignee: Duke University
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Filing: 1994-01-31
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Granted: 1995-12-12
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Expires: 2014-01-31
Abstract
Abstract The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K) 3 E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX 3 ) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.
Inventors
- 👤 Richard L. Wells
- 👤 Shreyas S. Kher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:52
CPC Classifications
C; C30; C30B; C30B7/00; C30B29/00; C30B29/10; C30B29/40; C30B29/42; C30B29/44; Y; Y10; Y10S; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
89 words
A method of synthesizing a Group III-V nanocrystalline semiconductor comprising: i) forming a mixture comprising a pnictide ((Na/K) 3 E) by mixing a sodium/potassium (Na/K) alloy with an excess of Group VA (E) element in an aromatic solvent ii) mixing the (Na/K) 3 E resulting from step (i) with a solution comprising a Group IIIA trihalide (MX 3 ) in the presence of a coordinating solvent so that a suspension comprising said Group III-V nanocrystalline semiconductor (ME) and (Na/K)X is formed; and iii) isolating ME resulting from step (ii).
Claim 2
Independent Claim
89 words
A method of synthesizing a Group III-V nanocrystalline semiconductor comprising: i) forming a mixture comprising a pnictide ((Na/K) 3 E) by mixing a sodium/potassium (Na/K) alloy with an excess of Group VA (E) element in an aromatic solvent ii) mixing the (Na/K) 3 E resulting from step (i) with a solution comprising a Group IIIA trihalide (MX 3 ) in the presence of a coordinating solvent so that a suspension comprising said Group III-V nanocrystalline semiconductor (ME) and (Na/K)X is formed; and iii) isolating ME resulting from step (ii).
Claim 3
Dependent Claim
19 words
The method according to claim 1 wherein E is selected from the group consisting of P, As and Sb.
Claim 4
Dependent Claim
18 words
The method according to claim 2 wherein E is selected from the group consisting of P and As.
Claim 5
Dependent Claim
27 words
The method according to claim 1 wherein said Group IIIA trihalide is selected from the group consisting of gallium trihalide, indium trihalide, aluminum trihalide and boron trihalide.
Claim 6
Dependent Claim
23 words
The method according to claim 4 wherein said Group IIIA trihalide is selected from the group consisting of gallium trihalide and indium trihalide.
Claim 7
Dependent Claim
20 words
The method according to claim 1 wherein said aromatic solvent is selected from the group consisting of toluene and xylene.
Claim 8
Dependent Claim
25 words
The method according to claim 1 wherein said aromatic solvent comprising said Na/K alloy and E is refluxed so that (Na/K) 3 E is formed.
Claim 9
Dependent Claim
14 words
The method according to claim 1 wherein said coordinating solvent is a glyme solvent.
Claim 10
Dependent Claim
41 words
The method according to claim 1 wherein said mixture of the (Na/K) 3 E resulting from step (i) and the solution comprising a Group IIIA trihalide and the coordinating solvent is refluxed so that said Group III-V nanocrystalline semiconductor is formed.
Claim 11
Dependent Claim
58 words
The method according to claim 1 wherein said isolating step (iii) comprising: a) harvesting solid material present in said suspension resulting from step (ii), which solid material comprises said ME and (Na/K)X, unreacted MX 3 or excess E; b) washing said harvested solid material under conditions such that (Na/K)X and unreacted MX 3 are separated from said ME.
Claim 12
Dependent Claim
18 words
The method according to claim 10 further comprising, removing excess E from solid material resulting from step (b).
Claim 13
Dependent Claim
16 words
The method according to claim 1 wherein said ME has a particle size of 3-38 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-11 | 1999-06-12 | 1999-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-11 | 2003-06-12 | 2003-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-11 | 2007-06-12 | 2007-12-12 | $7700.00 | Window Closed / Lapsed |