US5473197A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having bump electrodes with a trapezoidal cross-section along one axis
Assignee: Toshiba Corp
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Filing: 1994-05-20
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Granted: 1995-12-05
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Expires: 2014-05-20
Abstract
Abstract Pads are formed on a semiconductor substrate and the pads are covered with a passivation film. Openings are formed in the passivation film and the pads are exposed via the openings. A barrier metal layer is formed on the bottom surface and side surface of each of the openings and the upper surface of the passivation film lying on the periphery of each of the openings. Bump electrodes are filled in the openings and project upwardly from the openings. The area of the upper surface of the bump electrode is larger than the area of the bottom surface thereof connected to the pad. The cross section of the bump electrode in a direction along the periphery of the semiconductor substrate takes a rectangular form and the cross section of the bump electrode in a direction perpendicular to the periphery of the semiconductor substrate takes a trapezium form having an upper side longer than a bottom side thereof.
Inventors
- 👤 Toshiaki Idaka
- 👤 Hirokazu Ezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:47
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10P; H10P95/00; H10P95/08; H10W72/01251; H10W72/01255; H10W72/20; H10W72/231; H10W72/234; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
127 words
A semiconductor device comprising: a plurality of pad areas formed on a semiconductor substrate, said semiconductor substrate having an element region in which a circuit pattern is formed and said pad areas being arranged along the periphery of said element region and connected to said element region; and a plurality of bump electrodes connected to said pad areas, each of said bump electrodes having a square bottom surface and a rectangular upper surface larger than the bottom surface, a shorter one of the sides of the upper surface having substantially the same length as one side of the square bottom surface and the cross section of each of said bump electrodes in a direction perpendicular to the periphery of said element region having a substantially trapezoidal shape.
Claim 2
Dependent Claim
127 words
A semiconductor device comprising: a plurality of pad areas formed on a semiconductor substrate, said semiconductor substrate having an element region in which a circuit pattern is formed and said pad areas being arranged along the periphery of said element region and connected to said element region; and a plurality of bump electrodes connected to said pad areas, each of said bump electrodes having a square bottom surface and a rectangular upper surface larger than the bottom surface, a shorter one of the sides of the upper surface having substantially the same length as one side of the square bottom surface and the cross section of each of said bump electrodes in a direction perpendicular to the periphery of said element region having a substantially trapezoidal shape.
Claim 3
Dependent Claim
22 words
A device according to claim 1, wherein the upper surface of each of said bump electrodes extends toward said element region only.
Claim 4
Dependent Claim
30 words
A device according to claim 1, wherein the upper surface of each of said bump electrodes extends toward said element region and towards the opposite side of said element region.
Claim 5
Dependent Claim
138 words
A semiconductor device comprising: a plurality of pad areas formed on a semiconductor substrate, said semiconductor substrate having an element region in which a circuit pattern is formed and said pad areas being arranged along the periphery of said element region and connected to said element region; and a plurality of bump electrodes connected to said pad areas, each of said bump electrodes having a square bottom surface and a rectangular upper surface, a shorter one of the sides of the upper surface having substantially the same length as one side of the square bottom surface and the cross section of each of said bump electrodes in a direction perpendicular to the periphery of said element region having a substantially trapezoidal shape; wherein the upper surface of each of said bump electrodes extends toward said element region only.
Claim 6
Dependent Claim
138 words
A semiconductor device comprising: a plurality of pad areas formed on a semiconductor substrate, said semiconductor substrate having an element region in which a circuit pattern is formed and said pad areas being arranged along the periphery of said element region and connected to said element region; and a plurality of bump electrodes connected to said pad areas, each of said bump electrodes having a square bottom surface and a rectangular upper surface, a shorter one of the sides of the upper surface having substantially the same length as one side of the square bottom surface and the cross section of each of said bump electrodes in a direction perpendicular to the periphery of said element region having a substantially trapezoidal shape; wherein the upper surface of each of said bump electrodes extends toward said element region only.
Claim 7
Dependent Claim
151 words
A semiconductor device comprising: a plurality of pad areas formed on a semiconductor substrate, said semiconductor substrate having an element region in which a circuit pattern is formed and said pad areas being arranged along the periphery of said element region and connected to said element region; and a plurality of bump electrodes connected to said pad areas, each of said bump electrodes having a square bottom surface and a rectangular upper surface larger than the bottom surface, a shorter one of the sides of the upper surface having substantially the same length as one side of the square bottom surface and the cross section of each of said bump electrodes in a direction perpendicular to the periphery of said element region having a substantially trapezoidal shape; wherein the upper surface of each of said bump electrodes extends toward said element region and towards the opposite side of said element region.
Claim 8
Dependent Claim
151 words
A semiconductor device comprising: a plurality of pad areas formed on a semiconductor substrate, said semiconductor substrate having an element region in which a circuit pattern is formed and said pad areas being arranged along the periphery of said element region and connected to said element region; and a plurality of bump electrodes connected to said pad areas, each of said bump electrodes having a square bottom surface and a rectangular upper surface larger than the bottom surface, a shorter one of the sides of the upper surface having substantially the same length as one side of the square bottom surface and the cross section of each of said bump electrodes in a direction perpendicular to the periphery of said element region having a substantially trapezoidal shape; wherein the upper surface of each of said bump electrodes extends toward said element region and towards the opposite side of said element region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-04 | 1999-06-05 | 1999-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-04 | 2003-06-05 | 2003-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-04 | 2007-06-05 | 2007-12-05 | $7700.00 | Window Closed / Lapsed |