US5468666A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip
Assignee: Texas Instruments Inc
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Filing: 1993-04-29
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Granted: 1995-11-21
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Expires: 2013-04-29
Abstract
Abstract A semiconductor device having high and low voltage transistors on the same chip. High voltage NMOS transistor 76 comprises a polysilicon gate 40 doped at a first dopant level. Low voltage NMOS transistor comprises a polysilicon gate 44 doped at a second dopant level. The second dopant level is higher than the first. High voltage PMOS transistor 84 comprises a polysilicon gate 48 doped at a third dopant level. Low voltage PMOS transistor comprises a polysilicon gate 52 doped at a fourth dopant level. The fourth dopant level is higher than the third.
Inventors
- 👤 Richard A. Chapman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:25
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
172 words
A method for forming a semiconductor device having a semiconductor body, comprising the steps of: a. forming a gate oxide over a surface of said semiconductor body; b. depositing a layer of polysilicon over said gate oxide; c. masking said polysilicon layer overlying a high voltage NMOS region and exposing a first portion of said polysilicon layer overlying a low voltage NMOS region; d. implanting said first portion of said polysilicon layer with an n-type dopant at a first dopant implant dose; e. etching said polysilicon layer and said gate oxide to form at least one high voltage NMOS gate in said high voltage NMOS region and at least one low voltage NMOS gate in said low voltage NMOS region; and f. implanting first and second source/drain regions on opposite sides of said high voltage NMOS gate, third and fourth source/drain regions on opposite sides of said low voltage NMOS gate, said high voltage NMOS gate and said low voltage NMOS gate with said n-type dopant at a second dopant implant dose.
Claim 2
Independent Claim
172 words
A method for forming a semiconductor device having a semiconductor body, comprising the steps of: a. forming a gate oxide over a surface of said semiconductor body; b. depositing a layer of polysilicon over said gate oxide; c. masking said polysilicon layer overlying a high voltage NMOS region and exposing a first portion of said polysilicon layer overlying a low voltage NMOS region; d. implanting said first portion of said polysilicon layer with an n-type dopant at a first dopant implant dose; e. etching said polysilicon layer and said gate oxide to form at least one high voltage NMOS gate in said high voltage NMOS region and at least one low voltage NMOS gate in said low voltage NMOS region; and f. implanting first and second source/drain regions on opposite sides of said high voltage NMOS gate, third and fourth source/drain regions on opposite sides of said low voltage NMOS gate, said high voltage NMOS gate and said low voltage NMOS gate with said n-type dopant at a second dopant implant dose.
Claim 3
Dependent Claim
171 words
The method of claim 1 further comprising the steps of: a. masking said polysilicon layer overlying a high voltage PMOS region, said high voltage NMOS region and said low voltage NMOS region and exposing said polysilicon layer overlying a low voltage PMOS region after implanting said first portion of said polysilicon layer with an n-type dopant; b. implanting said polysilicon layer overlying said low voltage PMOS region with a p-type dopant at a third dopant implant dose prior to etching said polysilicon layer, wherein said etching said polysilicon layer step also forms at least one low voltage PMOS gate in said low voltage PMOS region and at least one high voltage PMOS gate in a high voltage PMOS region; and c. implanting fifth and sixth source/drain regions on opposite sides of said high voltage PMOS gate, seventh and eighth source/drain regions on opposite sides of said low voltage PMOS gate, said high voltage PMOS gate and said low voltage PMOS gate with said p-type dopant at a fourth dopant implant dose.
Claim 4
Dependent Claim
81 words
The method of claim 2, wherein said semiconductor body comprises: a. an epitaxial layer of a first conductivity type on a substrate of said first conductivity type; b. a well region of a second conductivity type on said epitaxial layer; and c. a plurality of field insulating areas on said epitaxial layer and said well region separating said high voltage NMOS gate, said low voltage NMOS gate, said low voltage PMOS gate and said high voltage PMOS gate from each other.
Claim 5
Dependent Claim
33 words
The method of claim 3, wherein said first conductivity type is p-type, said second conductivity type is n-type and said fifth, sixth, seventh and eighth source/drain regions are formed in said well region.
Claim 6
Dependent Claim
47 words
The method of claim 2, further comprising the steps of: a. annealing said semiconductor body after said step of implanting said first portion of said polysilicon layer; and b. annealing said semiconductor body after said step of implanting said polysilicon layer overlong said low voltage PMOS region.
Claim 7
Dependent Claim
51 words
The method of claim 2, further comprising the step of implanting lightly doped drains on opposite sides of each of said high voltage NMOS gates, low voltage NMOS gates, low voltage PMOS gates, and said high voltage PMOS gates after said step of etching said polysilicon layer and said gate oxide.
Claim 8
Dependent Claim
29 words
The method of claim 2, wherein said polysilicon layer has a thickness greater than a depth of said first, second, third, fourth, fifth, sixth, seventh and eighth source/drain regions.
Claim 9
Dependent Claim
18 words
The method of claim 2, wherein said polysilicon layer has a thickness in the range of 0.2-0.4 microns.
Claim 10
Dependent Claim
42 words
The method of claim 2, wherein said first and third dopant implant doses are in the range of 1E15/cm 2 to 1E16/cm 2 and said second and fourth dopant implant doses are in the range of 1E15/cm 2 to 5E15/cm 2 .
Claim 11
Dependent Claim
17 words
The method of claim 2, wherein said n-type dopant is phosphorus and said p-type dopant is boron.
Claim 12
Dependent Claim
17 words
The method of claim 2, wherein said n-type dopant is arsenic and said p-type dopant is boron.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-11-20 | 1999-05-22 | 1999-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-20 | 2003-05-22 | 2003-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-20 | 2007-05-22 | 2007-11-21 | $7700.00 | Window Closed / Lapsed |