US5466639A
Expired / Lapsed
US
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Double mask process for forming trenches and contacts during the formation of a semiconductor memory device
Assignee: Round Rock Research LLC
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Filing: 1994-10-06
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Granted: 1995-11-14
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Expires: 2014-10-06
Abstract
Abstract A method of forming contact to a semiconductor memory device feature comprises the steps of forming a first oxide layer over a feature such as a semiconductor substrate or a conductive line or plate, then forming a hard mask over the first oxide layer. A first patterned resist layer is formed on the hard mask, then the hard mask is patterned using the first resist layer as a pattern. The first resist layer is removed and a second oxide layer is formed over the hard mask. A second patterned resist layer is formed over the second oxide layer and the second oxide layer is etched using the second resist layer as a pattern while, during a single etch step, the first oxide layer is etched using the hard mask as a pattern, the hard mask functioning as an etch stop. The second resist layer is removed and a conductive layer is formed over the second dielectric layer and the hard mask, with the conductive layer (including any adhesion layers required to adhere the conductive layer to the underlying layer), contacting the feature and forming contacts. The conductive layer is then planarized.
Inventors
- 👤 Philip J. Ireland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/086; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S438/00; Y10S438/942; Y10S438/945; Y10S438/975
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
112 words
A method for forming contact to a semiconductor device feature comprising the following steps: a) forming a first dielectric layer over a feature to be contacted; b) forming a mask over said first dielectric layer; c) forming a first patterned resist layer on said mask; d) patterning said mask using said first resist layer as a pattern; e) removing said first resist layer; then f) forming a second dielectric layer over said mask; g) forming a second patterned resist layer over said second dielectric layer; h) etching said second dielectric layer using said second resist layer as a pattern; then i) etching said first dielectric layer using said mask as a pattern.
Claim 2
Independent Claim
112 words
A method for forming contact to a semiconductor device feature comprising the following steps: a) forming a first dielectric layer over a feature to be contacted; b) forming a mask over said first dielectric layer; c) forming a first patterned resist layer on said mask; d) patterning said mask using said first resist layer as a pattern; e) removing said first resist layer; then f) forming a second dielectric layer over said mask; g) forming a second patterned resist layer over said second dielectric layer; h) etching said second dielectric layer using said second resist layer as a pattern; then i) etching said first dielectric layer using said mask as a pattern.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein steps h) and i) are performed during a single etch step.
Claim 4
Dependent Claim
37 words
The method of claim 1, further comprising the following steps: j) removing said second resist layer; k) forming a conductive layer over said mask and over said first and second dielectric layers; l) planarizing said conductive layer.
Claim 5
Dependent Claim
28 words
The method of claim 3 wherein said conductive layer is metal and is formed as a single layer to form metal contacts to said feature and conductive lines.
Claim 6
Dependent Claim
12 words
The method of claim 4 wherein said conductive lines are bit lines.
Claim 7
Dependent Claim
12 words
The method of claim 4 wherein said conductive lines are word lines.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein said dielectric layer is oxide and said mask is silicon nitride.
Claim 9
Dependent Claim
17 words
The method of claim 1 wherein said mask functions as an etch stop layer during step h).
Claim 10
Independent Claim
129 words
A method for forming contact to a semiconductor device feature comprising the following steps: a) forming a first oxide layer over a feature to be contacted; b) forming a mask over said first oxide layer; c) forming a first patterned resist layer on said mask; d) patterning said mask using said first resist layer as a pattern; e) removing said first resist layer; then f) forming a second oxide layer on said mask; g) forming a second patterned resist layer over said second oxide layer; h) etching said second oxide layer using said second resist layer as a pattern; then i) etching said first oxide layer using said mask as a pattern; j) forming a conductive layer over said first and second oxide layers; k) planarizing said conductive layer.
Claim 11
Independent Claim
129 words
A method for forming contact to a semiconductor device feature comprising the following steps: a) forming a first oxide layer over a feature to be contacted; b) forming a mask over said first oxide layer; c) forming a first patterned resist layer on said mask; d) patterning said mask using said first resist layer as a pattern; e) removing said first resist layer; then f) forming a second oxide layer on said mask; g) forming a second patterned resist layer over said second oxide layer; h) etching said second oxide layer using said second resist layer as a pattern; then i) etching said first oxide layer using said mask as a pattern; j) forming a conductive layer over said first and second oxide layers; k) planarizing said conductive layer.
Claim 12
Dependent Claim
17 words
The method of claim 9 wherein steps h) and i) are performed with a single etch step.
Claim 13
Dependent Claim
35 words
The method of claim 9 wherein said conductive layer is metal, and a single metal layer is formed over said first and second oxide layers to form metal contacts to said feature and conductive lines.
Claim 14
Dependent Claim
12 words
The method of claim 11 wherein said conductive lines are bit lines.
Claim 15
Dependent Claim
12 words
The method of claim 11 wherein said conductive lines are word lines.
Claim 16
Dependent Claim
11 words
The method of claim 11 wherein said mask is silicon nitride.
Claim 17
Dependent Claim
16 words
The method of claim 9 wherein said mask functions as an etch stop during step h).
Claim 18
Independent Claim
164 words
A method for forming contact to a semiconductor device feature during the formation of a semiconductor memory device comprising the following steps: a) forming a first oxide layer over a feature to be contacted; b) forming a mask over said first oxide layer; c) forming a first patterned resist layer on said mask; d) patterning said mask using said first resist layer as a pattern; e) removing said first resist layer; then f) forming a second oxide layer over said mask; g) forming a second patterned resist layer over said second oxide layer; h) etching said second oxide layer using said second resist layer as a pattern and etching said first oxide layer using said mask as a pattern during a single etch step, said mask functioning as an etch stop; i) removing said second resist layer; j) forming a conductive layer over said second oxide layer and said mask, said conductive layer contacting said feature and forming contacts; k) planarizing said conductive layer.
Claim 19
Independent Claim
164 words
A method for forming contact to a semiconductor device feature during the formation of a semiconductor memory device comprising the following steps: a) forming a first oxide layer over a feature to be contacted; b) forming a mask over said first oxide layer; c) forming a first patterned resist layer on said mask; d) patterning said mask using said first resist layer as a pattern; e) removing said first resist layer; then f) forming a second oxide layer over said mask; g) forming a second patterned resist layer over said second oxide layer; h) etching said second oxide layer using said second resist layer as a pattern and etching said first oxide layer using said mask as a pattern during a single etch step, said mask functioning as an etch stop; i) removing said second resist layer; j) forming a conductive layer over said second oxide layer and said mask, said conductive layer contacting said feature and forming contacts; k) planarizing said conductive layer.
Claim 20
Dependent Claim
35 words
The method of claim 16 wherein said conductive layer comprises metal and a single metal layer is formed over said first and second oxide layers to form metal contacts to said feature and conductive lines.
Claim 21
Dependent Claim
12 words
The method of claim 17 wherein said conductive lines are bit lines.
Claim 22
Dependent Claim
12 words
The method of claim 17 wherein said conductive lines are word lines.
Claim 23
Dependent Claim
11 words
The method of claim 16 wherein said mask is silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-11-13 | 1999-05-15 | 1999-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-13 | 2003-05-15 | 2003-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-13 | 2007-05-15 | 2007-11-14 | $7700.00 | Window Closed / Lapsed |