Abstract The method and apparatus of this invention for evaluation of a semiconductor production process effect the determination of the shallow pit density of a silicon wafer by predetermining the correlation between the average shallow pit density on a wafer surface obtained by microscopic observation and the average magnitude of a scattered light on the wafer surface obtained by the determination with the wafer surface inspection system operated in the haze mode, determining the average magnitude on the wafer surface of a scattered light for a silicon wafer treated by a semiconductor production process under evaluation, and analyzing the data found by the determination in combination with the correlation mentioned above. Thus, they bring about an effect of enabling the determination to be carried out automatically and quickly and exalting the accuracy of determination and allowing a generous cut in the time required for the determination as compared with the conventional determination resorting to visual measurement and evaluation.
A method for the evaluation of a semiconductor production process, comprising the steps of: heat-treating a silicon wafer by using a furnace system and etching the heat-treated silicon wafer by immersing in an etching liquid; obtaining a correlation between an average value of shallow pit density determined by microscopic observation and an average value of a magnitude of light scattered determined by a wafer surface inspection system using a beam of light, which correlation is characterized by obtaining several heat-treated silicon wafers by using furnace systems with different levels of impurity contamination; determining an average value of the magnitude of scattered light reflected from a surface of a silicon wafer by using said wafer surface inspection system, which wafer is heat-treated by a furnace system under evaluation; determining the shallow pit density of said heat-treated silicon wafer from said furnace system under evaluation, based on said average value of the magnitude of scattered light reflected from said silicon wafer surface and said correlation; inspecting the cleanliness of said furnace system for heat treating the silicon wafer in the semiconductor production process; and judging the acceptability or rejectability of said furnace system, based on said determining of shallow pit density.
Claim 2
Independent Claim
199 words
A method for the evaluation of a semiconductor production process, comprising the steps of: heat-treating a silicon wafer by using a furnace system and etching the heat-treated silicon wafer by immersing in an etching liquid; obtaining a correlation between an average value of shallow pit density determined by microscopic observation and an average value of a magnitude of light scattered determined by a wafer surface inspection system using a beam of light, which correlation is characterized by obtaining several heat-treated silicon wafers by using furnace systems with different levels of impurity contamination; determining an average value of the magnitude of scattered light reflected from a surface of a silicon wafer by using said wafer surface inspection system, which wafer is heat-treated by a furnace system under evaluation; determining the shallow pit density of said heat-treated silicon wafer from said furnace system under evaluation, based on said average value of the magnitude of scattered light reflected from said silicon wafer surface and said correlation; inspecting the cleanliness of said furnace system for heat treating the silicon wafer in the semiconductor production process; and judging the acceptability or rejectability of said furnace system, based on said determining of shallow pit density.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein the judgement of the acceptability is below 4×10 5 /cm 2 of the shallow pit density.
Claim 4
Dependent Claim
29 words
A method according to claim 1, wherein said silicon wafer obtained by FZ method is an N type <100>, having resistivity in the range of 1 to 100Ω cm.