US5464480A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process and apparatus for the treatment of semiconductor wafers in a fluid
Assignee: Legacy Systems Inc
•
Filing: 1993-07-16
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Granted: 1995-11-07
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Expires: 2013-07-16
Abstract
Abstract Provided is a process for removing organic materials from semiconductor wafers. The process involves the use of subambient deionized water with ozone absorbed into the water. The ozonated water flows over the wafers and the ozone oxidizes the organic materials from the wafers to insoluble gases. The ozonated water may be prepared in-situ by diffusing ozone into a tank containing wafers and subambient deionized water. Also provided is a tank for the treatment of semiconductor wafers with a fluid and a gas diffuser for diffusion of gases directly into fluids in a wafer treatment tank.
Inventors
- 👤 Robert R. Matthews
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:17
CPC Classifications
H; H10; H10P; H10P52/00; H10P70/00; H10P70/10; B; B08; B08B; B08B3/00; B08B3/04; B08B3/08; B08B3/10; B08B3/12; H10P70/15; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P72/0411; H10P72/0416; B08B2203/00; B08B2203/005; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
31 words
A process for removing organic materials from semiconductor wafers comprising contacting the wafers with a solution of ozone and water at a temperature of about 1° C. to about 15° C.
Claim 2
Dependent Claim
31 words
A process for removing organic materials from semiconductor wafers comprising contacting the wafers with a solution of ozone and water at a temperature of about 1° C. to about 15° C.
Claim 3
Dependent Claim
11 words
The process of claim 1, wherein the organic material is photoresist.
Claim 4
Dependent Claim
16 words
The process of claim 1, wherein the temperature is about 5° C. to about 9° C.
Claim 5
Dependent Claim
62 words
A process for removing organic materials from semiconductor wafers comprising: placing semiconductor wafers into a tank containing deionized water; diffusing ozone into the deionized water for a time sufficient to oxidize the organic materials from the wafers to insoluble gases; maintaining the deionized water at a temperature of about 1° C. to about 15° C.; and rinsing the wafers with deionized water.
Claim 6
Dependent Claim
62 words
A process for removing organic materials from semiconductor wafers comprising: placing semiconductor wafers into a tank containing deionized water; diffusing ozone into the deionized water for a time sufficient to oxidize the organic materials from the wafers to insoluble gases; maintaining the deionized water at a temperature of about 1° C. to about 15° C.; and rinsing the wafers with deionized water.
Claim 7
Dependent Claim
14 words
The process of claim 4 further comprising exhausting the insoluble gases from the tank.
Claim 8
Dependent Claim
20 words
The process of claim 4, wherein the ozone is diffused uniformly across the face of each wafer in the tank.
Claim 9
Dependent Claim
31 words
The process of claim 4 further comprising, after the rinse with deionized water, rinsing the wafers with deionized water heated to a temperature between about 65° C. and about 85° C.
Claim 10
Dependent Claim
20 words
The process of claim 4, wherein ozone is diffused into the deionized water for about 1 to about 15 minutes.
Claim 11
Dependent Claim
17 words
The process of claim 8, wherein the wafers are rinsed for about 1 to about 5 minutes.
Claim 12
Dependent Claim
11 words
The process of claim 4, wherein the organic material is photoresist.
Claim 13
Dependent Claim
21 words
The process of claim 4, wherein the deionized water is at a temperature of about 5° C. to about 9° C.
Claim 14
Dependent Claim
85 words
A process for removing organic materials from semiconductor wafers comprising: placing semiconductor wafers into a tank containing deionized water; diffusing ozone into the deionized water; simultaneously with diffusing the ozone exposing the ozone to ultraviolet light as the ozone is absorbed and bubbled through the deionized water to form oxygen free radicals and oxygen molecules which oxidize the organic materials to insoluble gases; maintaining the deionized water at a temperature of about 1° C. to about 15° C.; and rinsing the wafers with deionized water.
Claim 15
Dependent Claim
85 words
A process for removing organic materials from semiconductor wafers comprising: placing semiconductor wafers into a tank containing deionized water; diffusing ozone into the deionized water; simultaneously with diffusing the ozone exposing the ozone to ultraviolet light as the ozone is absorbed and bubbled through the deionized water to form oxygen free radicals and oxygen molecules which oxidize the organic materials to insoluble gases; maintaining the deionized water at a temperature of about 1° C. to about 15° C.; and rinsing the wafers with deionized water.
Claim 16
Dependent Claim
11 words
The process of claim 12, wherein the organic material is photoresist.
Claim 17
Dependent Claim
14 words
The process of claim 12, wherein the insoluble gases are exhausted from the tank.
Claim 18
Dependent Claim
38 words
A process for removing organic materials from semiconductor wafers comprising a stripping of the wafers effected by contacting said wafers with a solution of ozone and water at a temperature of about 1° C. to about 15° C.
Claim 19
Dependent Claim
38 words
A process for removing organic materials from semiconductor wafers comprising a stripping of the wafers effected by contacting said wafers with a solution of ozone and water at a temperature of about 1° C. to about 15° C.
Claim 20
Dependent Claim
31 words
The process for removing organic materials from semiconductor wafers of claim 15, wherein said stripping removes a layer of organic materials having a thickness from about 50 to about 250 mils.
Claim 21
Dependent Claim
27 words
The process for removing organic materials from semiconductor wafers of claim 15, wherein said stripping is not preceded by a stripping treatment of alkali or acid reagents.
Claim 22
Dependent Claim
25 words
The process for removing organic materials from semiconductor wafers of claim 15, wherein said stripping is not preceded by a stripping treatment of organic solvent.
Claim 23
Dependent Claim
27 words
The process for removing organic materials from semiconductor wafers of claim 15, wherein said stripping is not preceded by removal of organic materials from said semiconductor wafers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-06 | 1999-05-08 | 1999-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-06 | 2003-05-08 | 2003-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-06 | 2007-05-08 | 2007-11-07 | $7700.00 | Window Closed / Lapsed |