Patent US5463269A successfully refreshed from Google Patents.
US5463269A
Expired / Lapsed
US
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Process and structure of an integrated vacuum microelectronic device
Assignee: GlobalFoundries Inc
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Filing: 1992-03-06
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Granted: 1995-10-31
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Expires: 2012-03-06
Abstract
Abstract The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.
Inventors
- 👤 Steven M. Zimmerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:28
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J21/00; H01J21/02; H01J21/06; H01J21/10; H01J21/105; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30446; H01J2201/30453; H01J2201/30457
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
69 words
An integrated vacuum microelectronic device comprising an electron-emitting material having at least one field emission tip and at least one access hole that leads into a chamber, wherein said field emitter tip faces an anode which is in said chamber and is separated by at least one insulating material, and wherein at least a portion of said at least one access hole in said electron-emitting material faces said anode.
Claim 2
Dependent Claim
69 words
An integrated vacuum microelectronic device comprising an electron-emitting material having at least one field emission tip and at least one access hole that leads into a chamber, wherein said field emitter tip faces an anode which is in said chamber and is separated by at least one insulating material, and wherein at least a portion of said at least one access hole in said electron-emitting material faces said anode.
Claim 3
Dependent Claim
32 words
The integrated vacuum microelectronic device of claim 1, further comprises at least two devices and wherein at least a portion of one of said device is electrically connected to said second device.
Claim 4
Dependent Claim
28 words
The integrated vacuum microelectronic device of claim 1, wherein said insulating material further comprises one or more additional insulating materials separated by at least one electrically conductive material.
Claim 5
Dependent Claim
14 words
The integrated vacuum microelectronic device of claim 1, wherein said electron-emitting layer is multilayered.
Claim 6
Dependent Claim
15 words
The integrated vacuum microelectronic device of claim 1, wherein at least one tip is multilayered.
Claim 7
Dependent Claim
31 words
The integrated vacuum microelectronic device of claim 1, further comprising on the tip side of the electron-emitting layer at least one barrier layer, which is selectively removed to expose said tip.
Claim 8
Dependent Claim
19 words
The integrated vacuum microelectronic device of claim 1, wherein said tip has a coating of a second electron-emitting material.
Claim 9
Dependent Claim
13 words
The integrated vacuum microelectronic device of claim 1, wherein said tip is sharpened.
Claim 10
Dependent Claim
32 words
The integrated vacuum microelectronic device of claim 1, further comprises at least two devices, wherein at least a portion of one device is electrically isolated from a portion of said second device.
Claim 11
Dependent Claim
28 words
The integrated vacuum microelectronic device of claim 1, wherein at least a portion of said device is electrically connected to a portion of at least one passive device.
Claim 12
Dependent Claim
57 words
An integrated vacuum microelectronic device comprising an electron-emitting material having at least one field emission tip and at least one access hole that leads into a chamber, wherein said field emitter tip faces an anode which is in said chamber and is separated by at least one insulating material, and wherein said tip has a secondary cusp.
Claim 13
Dependent Claim
57 words
An integrated vacuum microelectronic device comprising an electron-emitting material having at least one field emission tip and at least one access hole that leads into a chamber, wherein said field emitter tip faces an anode which is in said chamber and is separated by at least one insulating material, and wherein said tip has a secondary cusp.
Claim 14
Dependent Claim
18 words
The integrated vacuum microelectronic device of claim 1, wherein said tip has a point or a blade profile.
Claim 15
Dependent Claim
23 words
The integrated vacuum microelectronic device of claim 1, wherein said field emission tip preferably has a radius of between 10 to 100 nm.
Claim 16
Dependent Claim
25 words
The integrated vacuum microelectronic device of claim 2, wherein at least one of said devices has a field emission tip that has a pointed projection.
Claim 17
Dependent Claim
25 words
The integrated vacuum microelectronic device of claim 2, wherein at least one of said devices has a field emission tip that has a blade profile.
Claim 18
Dependent Claim
31 words
The integrated vacuum microelectronic device of claim 1, wherein said field emission tip faces a substrate and wherein said anode is on the substrate side of said integrated vacuum microelectronic device.
Claim 19
Dependent Claim
14 words
The integrated vacuum microelectronic device of claim 1, wherein said substrate is the anode.
Claim 20
Dependent Claim
46 words
The integrated vacuum microelectronic device of claim 1, wherein said electron-emitting material is selected from a group comprising Mo, W, Ta, Re, Pt, Au, Ag, Al, Cu, Nb, Ni, Cr, Ti, Zr, Hf and alloys thereof or solid solutions containing two or more of these elements.
Claim 21
Dependent Claim
48 words
The integrated vacuum microelectronic device of claim 1, wherein the material for said anode is selected from a group comprising Mo, W, Ta, Re, Pt, Au, Ag, Al, Cu, Nb, Ni, Cr, Ti, Zr, Hf and alloys thereof or solid solutions containing two or more of these elements.
Claim 22
Dependent Claim
22 words
The integrated vacuum microelectronic device of claim 1, wherein said electron-emitting material is selected from a group comprising doped and undoped semiconductors.
Claim 23
Dependent Claim
28 words
The integrated vacuum microelectronic device of claim 1, wherein said insulating material is selected from a group comprising sapphire, glass or oxides of Si, Al, Mg and Ce.
Claim 24
Dependent Claim
20 words
The integrated vacuum microelectronic device of claim 2, wherein at least one tip of one of said device is multilayered.
Claim 25
Dependent Claim
22 words
The integrated vacuum microelectronic device of claim 1, wherein said device is stacked on top of other technology and electrically connected thereto.
Claim 26
Dependent Claim
28 words
The integrated vacuum microelectronic device of claim 1, further comprises at least two devices, and wherein one of said device is stacked on top of said second device.
Claim 27
Dependent Claim
29 words
The integrated vacuum microelectronic device of claim 1, wherein at least a portion of said chamber has a profile where the dimensions of the chamber are constant with depth.
Claim 28
Dependent Claim
28 words
The integrated vacuum microelectronic device of claim 1, wherein at least a portion of said chamber has a profile where the dimensions of the chamber vary with depth.
Claim 29
Dependent Claim
16 words
The integrated vacuum microelectronic device of claim 1, wherein said anode is of a semiconductor material.
Claim 30
Dependent Claim
35 words
The integrated vacuum microelectronic device of claim 1, wherein said anode is of a semiconductor material, and wherein said semiconductor material has electrically biased P-N junctions to create an electrically isolated region in said anode.
Claim 31
Dependent Claim
16 words
The integrated vacuum microelectronic device of claim 1, wherein said anode is on an insulative substrate.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-10-30 | 1999-05-01 | 1999-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-30 | 2003-05-01 | 2003-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-30 | 2007-05-01 | 2007-10-31 | $7700.00 | Window Closed / Lapsed |