US5459685A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device having memory cells with enhanced capacitor capacity
Assignee: United Microelectronics Corp
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Filing: 1994-03-29
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Granted: 1995-10-17
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Expires: 2014-03-29
Abstract
Abstract A semiconductor memory device includes a dielectric layer formed on a conductive thin film layer constituting a shield electrode for effecting element separation in a field area, the dielectric layer connected to a dielectric layer of a capacitor with a lower electrode having part thereof opposite to part of the shield electrode through the dielectric layer, and has an increase in electrode area of a memory cell to be able to attain the high level of integration.
Inventors
- 👤 Kenji Anzai
- 👤 Toshio Wada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:19
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
96 words
A semiconductor memory device including a memory cell having a transistor and a capacitor with a lower electrode and an upper electrode and a field area having a shield electrode for effecting element separation, comprising: a dielectric layer formed on said shield electrode and having an upper surface which is in contact with said lower electrode of said capacitor; wherein a part of said lower electrode of said capacitor is opposite to a part of said shield electrode through said dielectric layer, and wherein said dielectric layer functions as a capacitor dielectric layer of said capacitor.
Claim 2
Dependent Claim
96 words
A semiconductor memory device including a memory cell having a transistor and a capacitor with a lower electrode and an upper electrode and a field area having a shield electrode for effecting element separation, comprising: a dielectric layer formed on said shield electrode and having an upper surface which is in contact with said lower electrode of said capacitor; wherein a part of said lower electrode of said capacitor is opposite to a part of said shield electrode through said dielectric layer, and wherein said dielectric layer functions as a capacitor dielectric layer of said capacitor.
Claim 3
Dependent Claim
24 words
The semiconductor memory device according to claim 1, wherein said upper electrode of said capacitor and the shield electrode have the same electrical potential.
Claim 4
Dependent Claim
112 words
A semiconductor memory device including a substrate and memory cells provided thereon, each memory cell having a transistor and a capacitor with a lower electrode, an upper electrode and a dielectric layer between said lower electrode and said upper electrode, the device comprising a field area having at least a shield electrode electrically connected with said substrate for electrically separating each of said memory cells from other memory cells, wherein said dielectric layer is extended to an upper surface of said shield electrode, and wherein said lower electrode is opposite to a part of said shield electrode through said dielectric layer, and said shield electrode is electrically connected to said upper electrode.
Claim 5
Dependent Claim
112 words
A semiconductor memory device including a substrate and memory cells provided thereon, each memory cell having a transistor and a capacitor with a lower electrode, an upper electrode and a dielectric layer between said lower electrode and said upper electrode, the device comprising a field area having at least a shield electrode electrically connected with said substrate for electrically separating each of said memory cells from other memory cells, wherein said dielectric layer is extended to an upper surface of said shield electrode, and wherein said lower electrode is opposite to a part of said shield electrode through said dielectric layer, and said shield electrode is electrically connected to said upper electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-10-16 | 1999-04-17 | 1999-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-16 | 2003-04-17 | 2003-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-16 | 2007-04-17 | 2007-10-17 | $7700.00 | Window Closed / Lapsed |