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US5459098A Expired / Lapsed US ⏱️ 0.0 years remaining

Maskless laser writing of microscopic metallic interconnects

Assignee: Lockheed Martin Energy Systems Inc
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Filing: 1992-10-19
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Granted: 1995-10-17
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Expires: 2012-10-19
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Abstract

Abstract A method of forming a metal pattern on a substrate. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern.

Inventors

  • 👤 Leon Maya

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 20:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/068; H10P; H10P95/00

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 70 words
A method of forming a metal pattern on a substrate comprising the steps of: depositing an insulative nitride film on a substrate; and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining on the substrate as a conductive pattern, wherein the nitride film has a decomposition temperature range of between 100° and 1000° C.
Claim 2
Independent Claim 70 words
A method of forming a metal pattern on a substrate comprising the steps of: depositing an insulative nitride film on a substrate; and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining on the substrate as a conductive pattern, wherein the nitride film has a decomposition temperature range of between 100° and 1000° C.
Claim 3
Dependent Claim 28 words
A method according to claim 1, further comprising moving the substrate relative to the laser beam while irradiating the laser beam so as to shape the conductive pattern.
Claim 4
Dependent Claim 30 words
A method according to claim 1, wherein the metal constituent of the nitride film is selected from the group consisting of tin, copper, zinc, molybdenum, tungsten, cadmium, lead, and mercury.
Claim 5
Dependent Claim 17 words
A method according to claim 3, wherein the metal pattern has a width of about 1 micron.
Claim 6
Dependent Claim 20 words
A method according to claim 1, wherein the depositing step comprises a glow discharge deposition method using a nitrogen plasma.
Claim 7
Dependent Claim 12 words
A coated, patterned substrate made according to the method of claim 1.
Claim 8
Dependent Claim 28 words
A method according to claim 1, further comprising concentrating the laser beam by passing the laser beam through a magnifying optical device prior to irradiating the nitride film.
Claim 9
Dependent Claim 21 words
A method according to claim 7, wherein the optical device is a microscope objective having a power between 2 and 60.
Claim 10
Independent Claim 91 words
A method of forming a metal pattern on a substrate comprising the steps of: depositing a metal nitride film on a plate made of transparent material: positioning the metal nitride film in contact with a substrate within a cell; and irradiating a laser beam onto the nitride film through the plate, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent being deposited on the substrate as a conductive pattern, wherein the nitride film has a decomposition temperature range of between 100° and 1000° C.
Claim 11
Independent Claim 91 words
A method of forming a metal pattern on a substrate comprising the steps of: depositing a metal nitride film on a plate made of transparent material: positioning the metal nitride film in contact with a substrate within a cell; and irradiating a laser beam onto the nitride film through the plate, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent being deposited on the substrate as a conductive pattern, wherein the nitride film has a decomposition temperature range of between 100° and 1000° C.
Claim 12
Dependent Claim 25 words
A method according to claim 9, further comprising moving the substrate and plate in unison relative to the laser beam to shape the metal pattern.
Claim 13
Dependent Claim 30 words
A method according to claim 9, wherein the metal constituent of the nitride film is selected from the group consisting of tin, copper, zinc, molybdenum, tungsten, cadmium, lead, and mercury.
Claim 14
Dependent Claim 12 words
A coated, patterned substrate made according to the method of claim 9.
Claim 15
Dependent Claim 28 words
A method according to claim 9, further comprising concentrating the laser beam by passing the laser beam through a magnifying optical device prior to irradiating the nitride film.
Claim 16
Dependent Claim 23 words
A method according to claim 9, wherein the plate is made from a material selected from the group consisting of quartz and sapphire.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-10-16 1999-04-17 1999-10-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-10-16 2003-04-17 2003-10-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-10-16 2007-04-17 2007-10-17 $7700.00 Window Closed / Lapsed

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