Patent US5458697A successfully refreshed from Google Patents.
US5458697A
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US
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Highly purified metal material and sputtering target using the same
Assignee: Toshiba Corp
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Filing: 1994-12-07
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Granted: 1995-10-17
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Expires: 2014-12-07
Abstract
Abstract This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
Inventors
- 👤 Takashi Ishigami
- 👤 Minoru Obata
- 👤 Mituo Kawai
- 👤 Michio Satou
- 👤 Takashi Yamanobe
- 👤 Toshihiro Maki
- 👤 Noriaki Yagi
- 👤 Shigeru Ando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:05
CPC Classifications
C; C22; C22B; C22B34/00; C22B34/10; C22B34/12; C22B34/1263; C22B34/1268; C22B34/1272; C22B34/129; C22B34/1295; C22B9/00; C22B9/16; C22B9/22; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
78 words
A method of producing a wiring network on a substrate of a semi-conductor device, comprising the steps of: forming a thin film on said substrate of the semi-conductor device by sputtering a target consisting essentially of a highly purified metal comprising a metal selected from the group consisting of titanium, zirconium and hafnium, each containing not more than 10 ppm of Al; and treating said thin film by etching to remove portions other than the desired wiring network.
Claim 2
Independent Claim
78 words
A method of producing a wiring network on a substrate of a semi-conductor device, comprising the steps of: forming a thin film on said substrate of the semi-conductor device by sputtering a target consisting essentially of a highly purified metal comprising a metal selected from the group consisting of titanium, zirconium and hafnium, each containing not more than 10 ppm of Al; and treating said thin film by etching to remove portions other than the desired wiring network.
Claim 3
Dependent Claim
23 words
The method of producing the wiring network according to claim 1, wherein said thin film comprises a nitride of one of said metals.
Claim 4
Dependent Claim
16 words
A method of producing a wiring network according to claim 2, wherein said metal is titanium.
Claim 5
Dependent Claim
16 words
A method of producing a wiring network according to claim 2, wherein said metal is zirconium.
Claim 6
Dependent Claim
16 words
A method of producing a wiring network according to claim 2, wherein said metal is hafnium.
Claim 7
Dependent Claim
32 words
The method of producing the wiring network according to claim 1, wherein said semiconductor contains silicon, and said method further comprises the step of forming a silicide film from said thin film.
Claim 8
Dependent Claim
25 words
A method for producing a wiring network according to claim 6, wherein the step of forming the silicide film comprises a two step annealing treatment.
Claim 9
Dependent Claim
16 words
A method of producing a wiring network according to claim 7, wherein said metal is titanium.
Claim 10
Dependent Claim
16 words
A method of producing a wiring network according to claim 7, wherein said metal is zirconium.
Claim 11
Dependent Claim
16 words
A method of producing a wiring network according to claim 7, wherein said metal is hafnium.
Claim 12
Dependent Claim
25 words
A method of producing a wiring network according to claim 6, wherein the step of forming the silicide film takes place after said treating step.
Claim 13
Dependent Claim
16 words
A method of producing a wiring network according to claim 6, wherein said metal is titanium.
Claim 14
Dependent Claim
16 words
A method of producing a wiring network according to claim 6, wherein said metal is zirconium.
Claim 15
Dependent Claim
16 words
A method of producing a wiring network according to claim 6, wherein said metal is hafnium.
Claim 16
Dependent Claim
52 words
The method of producing the wiring network according to claim 1, wherein said highly purified metal contains not more than 250 ppm of oxygen; not more than 10 ppm each of elements consisting of Fe, Ni and Cr, and not more than 0.1 ppm each of elements consisting of Na and K.
Claim 17
Dependent Claim
16 words
A method of producing a wiring network according to claim 15, wherein said metal is titanium.
Claim 18
Dependent Claim
16 words
A method of producing a wiring network according to claim 15, wherein said metal is zirconium.
Claim 19
Dependent Claim
16 words
A method of producing a wiring network according to claim 15, wherein said metal is hafnium.
Claim 20
Dependent Claim
16 words
A method of producing a wiring network according to claim 1, wherein said metal is titanium.
Claim 21
Dependent Claim
16 words
A method of producing a wiring network according to claim 1, wherein said metal is zirconium.
Claim 22
Dependent Claim
16 words
A method of producing a wiring network according to claim 1, wherein said metal is hafnium.
Claim 23
Dependent Claim
46 words
A method of producing a wiring network according to claim 13, wherein said highly purified metal is produced by a method comprising the steps of: purifying a crude metal by an iodide process, and melting said purified metal with an electron beam in a high vacuum.
Claim 24
Dependent Claim
68 words
A method of producing a wiring network according to claim 1, wherein said highly purified metal is produced by a method comprising the steps of: purifying a crude metal by a fused salt electrolysis process, subjecting said metal to a surface treatment to remove a contaminated layer existing on the surface of said crude metal, and melting said purified metal with an electron beam in a high vacuum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-10-16 | 1999-04-17 | 1999-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-16 | 2003-04-17 | 2003-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-16 | 2007-04-17 | 2007-10-17 | $7700.00 | Window Closed / Lapsed |