Random access memory with digital signals running over the small signal region of the array

Claim 2

A semiconductor memory comprising: a plurality of memory storage devices; a plurality of small-signal lines for accessing data stored in said memory storage devices; and a plurality of large signal Input and Output lines for providing data to and from said memory, wherein said Input and Output lines are routed over a portion of said memory; and circuitry coupled to said Input and Output lines, said circuitry preventing noise external to said memory from being transmitted into said memory on said Input and Output lines over said memory.

Claim 3

The semiconductor memory of claim 1 wherein said I/O lines are routed symmetrically between said small-signal lines.

Claim 4

The semiconductor memory of claim 1 further comprising additional circuitry coupled to said Input and Output lines, said additional circuitry preventing said Input and Output lines over said memory from transitioning while data is being read on said small-signal lines.

Claim 5

A semiconductor memory array comprising: a plurality of memory storage devices arranged in an array of rows and columns; a plurality of bit-line pairs, each of said bit-line pairs comprising a first and a second bit-line wherein the relative voltage differential between said bit-lines of said bit-line pairs specifies the logical state of the data being read by said bit-line pair, said bit-line pairs for accessing data stored in said memory storage devices; a plurality of large signal Input and Output lines for providing data to and from said memory array, wherein said Input and Output lines are routed over at least a portion of said memory array; and circuitry for preventing said Input and Output lines over said memory array from transitioning while voltage is being developed on said bit-line pairs.

Claim 6

A semiconductor memory array comprising: a plurality of memory storage devices arranged in an array of rows and columns; a plurality of bit-line pairs, each of said bit-line pairs comprising a first and a second bit-line wherein the relative voltage differential between said bit-lines of said bit-line pairs specifies the logical state of the data being read by said bit-line pair, said bit-line pairs for accessing data stored in said memory storage devices; a plurality of large signal Input and Output lines for providing data to and from said memory array, wherein said Input and Output lines are routed over at least a portion of said memory array; and circuitry for preventing said Input and Output lines over said memory array from transitioning while voltage is being developed on said bit-line pairs.

Claim 7

The semiconductor memory array of claim 4 wherein said Input and Output lines are routed over said memory array in parallel with and at the center of said bit-lines of said bit-line pairs.

Claim 8

The semiconductor memory of claim 4 wherein the first and second bit-lines of said bit-line pairs cross at substantially the midpoint of said portion of said memory array over which said Input and Output lines are routed.

Claim 9

The semiconductor memory array of claims 4, 5, or 6 further comprising a plurality of buffers wherein a buffer is coupled to each of said Input and Output data lines at the periphery of said memory array.

Claim 10

The semiconductor memory array of claims 4, 5, or 6 further comprising a buffer coupled to each of said Output lines at the center of said memory array.

Claim 11

A very large scale on chip random access semiconductor memory array with a "butterfly" layout comprising: a first memory array having a first plurality of storage devices arranged in rows and columns; a second memory array having a second plurality of storage devices arranged in rows and columns; I/0 logic coupled between said first and said second memory array, said I/0 logic capable of controlling the Input and Output of data to said memory array; a plurality of bit-line pairs for reading data from and writing data into said storage devices, a bit-line pair for each column of said first and said second array, each of said bit-line pairs of said first array comprising a first and a second bit-line wherein the relative voltage differential between said first and said second bit-lines specifies the logical state of the data being read by said bit-line pair, wherein said first and said second bit-lines of said bit-line pairs cross-over at approximately the midpoint of said first array; a plurality of Input and Output lines for providing data to and from said I/0 logic of said memory array, respectively, said individual Input and Output lines routed approximately symmetrically between and in parallel with said bit-lines of said bit-line pairs; a first plurality of buffers provided on each of said Input and Output lines at the periphery of said first array, said buffers for preventing noise coupled to said Input and Output lines outside of said first array from being transmitted into said array on said Input and Output lines over said first array; a second plurality of buffers provided on each of said Output lines in said I/O logic at the center of said memory array for driving outputed data out of said array over said first array; and circuitry capable of preventing said Input and Output lines from transitioning while data is being read on said bit-lines of said first array.

Claim 12

A very large scale on chip random access semiconductor memory array with a "butterfly" layout comprising: a first memory array having a first plurality of storage devices arranged in rows and columns; a second memory array having a second plurality of storage devices arranged in rows and columns; I/0 logic coupled between said first and said second memory array, said I/0 logic capable of controlling the Input and Output of data to said memory array; a plurality of bit-line pairs for reading data from and writing data into said storage devices, a bit-line pair for each column of said first and said second array, each of said bit-line pairs of said first array comprising a first and a second bit-line wherein the relative voltage differential between said first and said second bit-lines specifies the logical state of the data being read by said bit-line pair, wherein said first and said second bit-lines of said bit-line pairs cross-over at approximately the midpoint of said first array; a plurality of Input and Output lines for providing data to and from said I/0 logic of said memory array, respectively, said individual Input and Output lines routed approximately symmetrically between and in parallel with said bit-lines of said bit-line pairs; a first plurality of buffers provided on each of said Input and Output lines at the periphery of said first array, said buffers for preventing noise coupled to said Input and Output lines outside of said first array from being transmitted into said array on said Input and Output lines over said first array; a second plurality of buffers provided on each of said Output lines in said I/O logic at the center of said memory array for driving outputed data out of said array over said first array; and circuitry capable of preventing said Input and Output lines from transitioning while data is being read on said bit-lines of said first array.

Claim 13

The memory array of claim 9 wherein said storage devices are six-transistor CMOS SRAM cells.

Claim 14

The memory array of claim 9 wherein said first and said second array each comprise approximately 256×256 storage devices.

Claim 15

The memory array of claim 9 wherein there are approximately 128 Output and 128 Input data lines to said memory array.

Claim 16

The memory array of claim 9 wherein said first memory array is located near components which are coupled to said memory array.

Claim 17

A semiconductor memory comprising: a plurality of memory storage devices; a plurality of small signal lines for accessing data stored in said memory storage devices; a plurality of large signal Input and Output lines for providing data to and from said memory, wherein said Input and Output lines are routed over a portion of said memory; and circuitry preventing said Input and Output lines over said memory from transitioning while data is being read on said small signal lines.

Claim 18

A semiconductor memory comprising: a plurality of memory storage devices; a plurality of small signal lines for accessing data stored in said memory storage devices; a plurality of large signal Input and Output lines for providing data to and from said memory, wherein said Input and Output lines are routed over a portion of said memory; and circuitry preventing said Input and Output lines over said memory from transitioning while data is being read on said small signal lines.

Claim 19

The semiconductor memory of claim 14 further comprising additional circuitry coupled to said Input and Output lines, said additional circuitry capable of preventing noise external to said memory from being transmitted into said memory on said Input and Output lines over said memory.

Claim 20

The semiconductor memory of claim 14 wherein said Input and Output lines are routed symmetrically between said small signal lines.