Patent US5457569A successfully refreshed from Google Patents.
US5457569A
Expired / Lapsed
US
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Semiconductor amplifier or laser having integrated lens
Assignee: AT&T Inc
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Filing: 1994-06-30
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Granted: 1995-10-10
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Expires: 2014-06-30
Abstract
Abstract An optical device includes a semiconductor optical amplifier and a lens for receiving optical energy from the optical amplifier. The lens and the optical amplifier are monolithically integrated on a common substrate. The optical amplifier may be of the type having a tapered active region. Rather than an optical amplifier, a semiconductor laser may be integrated with the lens. The lens may be formed by changing the refractive index of the waveguide core which is formed in the semiconductor material. This refractive index change may be produced by changing the thickness of a portion of the waveguide core layer.
Inventors
- 👤 Kang-Yih Liou
- 👤 Martin G. Young
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:37
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/50; H01S5/10; H01S3/00; H01S3/005; H01S5/005; H01S5/02; H01S5/026; H01S5/1053; H01S5/1064; H01S5/1082; H01S5/1085
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
43 words
An optical device comprising: a semiconductor optical amplifier; and a lens for receiving optical energy from the optical amplifier, said lens and said optical amplifier being monolithically integrated on a common substrate, said lens having a focal point located within said common substrate.
Claim 2
Dependent Claim
43 words
An optical device comprising: a semiconductor optical amplifier; and a lens for receiving optical energy from the optical amplifier, said lens and said optical amplifier being monolithically integrated on a common substrate, said lens having a focal point located within said common substrate.
Claim 3
Dependent Claim
25 words
The device of claim 1 wherein said lens comprises a portion of a waveguiding core layer of semiconductor material having a thickness of predetermined variation.
Claim 4
Dependent Claim
23 words
The device of claim 2 wherein said portion of the waveguiding core layer has a predetermined shape defining the shape of the lens.
Claim 5
Dependent Claim
21 words
The device of claim 1 wherein said focal point is located within said device near a facet of said common substrate.
Claim 6
Dependent Claim
83 words
The device of claim 1 wherein said optical amplifier includes a waveguide core having an active layer for supplying gain and an outer layer of electrically conductive material having a tapered shape that increases in width along a propagation axis of the optical amplifier, the portion of said active layer located beneath said outer conductive layer comprising a gain region of said conductive layer, said lens being located at a point along the propagation axis to receive optical energy from said waveguide core.
Claim 7
Dependent Claim
35 words
The device of claim 5 wherein said taper terminates in the direction of the propagation axis at a boundary between an amplifying section and a passive waveguiding section, said lens being located along said boundary.
Claim 8
Dependent Claim
25 words
The device of claim 5 wherein said waveguide core of said optical amplifier further comprises a passive waveguide layer in contact with said active layer.
Claim 9
Dependent Claim
22 words
The device of claim 6 wherein said taper forms an acute angle with a lateral surface oriented perpendicular to an input facet.
Claim 10
Dependent Claim
14 words
The device of claim 8 wherein said acute angle is approximately equal to 7°.
Claim 11
Dependent Claim
18 words
The device of claim 7 wherein said waveguide core is formed from a InGaAs/GaAs multiple quantum well structure.
Claim 12
Dependent Claim
128 words
A monolithic semiconductor structure comprising: a substrate defining an amplifying section and a passive waveguiding section; a bottom cladding layer, a core layer and a top cladding layer all formed from semiconductor materials and disposed on said amplifying section and said passive waveguiding section of the substrate, the portion of the core layer in the amplifying section including a semiconductor material for supplying gain to an optical signal and the portion of the core layer in the passive waveguiding section forming a passive waveguide layer that does not supply gain; and a lens having a prescribed shape and integrated on said substrate at a location such that optical energy propagating in the core layer passes through said lens, said lens having a focal point located within said structure.
Claim 13
Dependent Claim
128 words
A monolithic semiconductor structure comprising: a substrate defining an amplifying section and a passive waveguiding section; a bottom cladding layer, a core layer and a top cladding layer all formed from semiconductor materials and disposed on said amplifying section and said passive waveguiding section of the substrate, the portion of the core layer in the amplifying section including a semiconductor material for supplying gain to an optical signal and the portion of the core layer in the passive waveguiding section forming a passive waveguide layer that does not supply gain; and a lens having a prescribed shape and integrated on said substrate at a location such that optical energy propagating in the core layer passes through said lens, said lens having a focal point located within said structure.
Claim 14
Dependent Claim
54 words
The structure of claim 11 wherein said lens is disposed at a boundary between said amplifying section and said passive waveguiding section, said lens formed by producing a refractive step index resulting from a difference in thickness between the core layer in the amplifying section and the core layer in the passive waveguiding section.
Claim 15
Dependent Claim
24 words
The structure of claim 11 wherein said lens has a focal point located within the passive waveguiding section near a facet of said substrate.
Claim 16
Dependent Claim
39 words
An optical device comprising: a semiconductor laser; and a lens for receiving optical energy from the laser, said lens and said laser being monolithically integrated on a common substrate, said lens having a focal point located within said device.
Claim 17
Dependent Claim
39 words
An optical device comprising: a semiconductor laser; and a lens for receiving optical energy from the laser, said lens and said laser being monolithically integrated on a common substrate, said lens having a focal point located within said device.
Claim 18
Dependent Claim
27 words
The device of claim 14 wherein said lens is formed by a predetermined change in thickness of a portion of a waveguiding core layer of semiconductor material.
Claim 19
Dependent Claim
23 words
The device of claim 14 wherein said lens has a focal point located within said device near a facet of said common substrate.
Claim 20
Dependent Claim
82 words
The device of claim 14 wherein said semiconductor laser includes a waveguide core having an active layer for supplying gain and an outer layer of electrically conductive material having a tapered shape that increases in width along a propagation axis of the laser, the portion of said active layer located beneath said outer conductive layer comprising a gain region of said conductive layer, said lens being located at a point along the propagation axis to receive optical energy from said waveguide core.
Claim 21
Dependent Claim
35 words
The device of claim 17 wherein said taper terminates in the direction of the propagation axis at a boundary between a active section and a passive waveguiding section, said lens being located along said boundary.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-10-09 | 1999-04-10 | 1999-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-09 | 2003-04-10 | 2003-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-09 | 2007-04-10 | 2007-10-10 | $7700.00 | Window Closed / Lapsed |