Associative memory device with small memory cells selectively storing data bits and don't care bits

Claim 2

An associative memory device selectively entering into a registration mode and a retrieval mode, comprising: a) a plurality of addressable associative memory cells each implemented by a series combination of a first electrically erasable and programmable memory transistor and a second electrically erasable and programmable memory transistor, and formed into a plurality of associative memory cell groups; b) a plurality of pairs of data lines selectively provided for said plurality of addressable associative memory cells, the data lines of each pair being coupled to control gate electrodes of said first electrically erasable and programmable memory transistors of the associated addressable associative memory cells and control gate electrodes of said second electrically erasable and programmable memory transistors of said associated addressable associative memory cells; c) a plurality of potential lines selectively associated with said plurality of associative memory cell groups, said series combination of each of the associated addressable associative memory cells being inserted into the associated potential line; d) a variable voltage source connectable with said plurality of potential lines, and operative to supply a current to said plurality of potential lines; e) a data line driver unit coupled to said plurality of pairs of data lines, said data line driver unit being responsive to registration data bits in said registration mode for storing said registration data bits in said plurality of addressable associative memory cells, and operative to selectively energize the data lines of said plurality of pairs for changing one of said first electrically erasable and programmable memory transistor and said second electrically erasable and programmable memory transistor of each addressable associative memory cell to a non-conductive state depending upon the logic level of one of said registration data bits, said data line driver unit keeping both of said first electrically erasable and programmable memory transistor and said second electrically erasable and programmable memory transistor of one of said plurality of addressable associative memory cells in a conductive state when said one registration bit is a don't-care bit, said data line driver unit being responsive to reference data bits in said retrieval mode for selectively energizing said data lines of each pair, and checking said plurality of associative memory cell groups to determine whether or not said reference data bits are matched with said registration data bits stored in one of said plurality of associative memory cell groups, the first electrically erasable and programmable memory transistors and the second electrically erasable and programmable memory transistors of one of said plurality of associative memory cell groups being conductive when the registration data bits stored therein are matched with said reference data bits; and f) a current detecting unit connectable to said plurality of potential lines for detecting said current passing through one of said plurality of associative memory cell groups storing said registration data bits matched with said reference data bits, and operative to produce a hit signal indicative of the match between said reference data bits and said registration data bits.

Claim 3

The associative memory device as set forth in claim 1, in which said reference data bits contain a mask bit, said mask bit causing said data line driver unit to drive both data lines of the associated pair for making the first electrically erasable and programmable memory transistors and the second electrically erasable and programmable memory transistors of the associated addressable associative memory cells conductive.

Claim 4

The associative memory device as set forth in claim 1, in which each of said first electrically erasable and programmable memory transistor and said second electrically erasable and programmable memory transistor is a field effect transistor having a floating gate electrode in a gate insulating layer between a channel region and a control gate electrode coupled to the associated data line.

Claim 5

The associative memory device as set forth in claim 3, further having an erasing mode for making said first electrically erasable and programmable memory transistors and said second electrically erasable and programmable memory transistors conductive by evacuating carriers from the floating gate electrodes.

Claim 6

The associative memory device as set forth in claim 3, further comprising g) an addressing unit for selectively making said plurality of associative memory cell groups changeable from said conductive-state to said non-conductive state by injecting carrier into the floating gate electrode in said registration mode.

Claim 7

An associative memory device selectively entering into a registration mode, a retrieval mode and an erasing mode, comprising: a) a plurality of addressable associative memory cells each implemented by a parallel combination of a first electrically erasable and programmable memory transistor and a second electrically erasable and programmable memory transistor, and formed into a plurality of associative memory cell groups; b) a plurality of pairs of data lines selectively provided for said plurality of addressable associative memory cells, the data lines of each pair being coupled to control gate electrodes of said first electrically erasable and programmable memory transistors of the associated addressable associative memory cells and control gate electrodes of said second electrically erasable and programmable memory transistors of the associated addressable associative memory cells; c) a plurality of potential lines selectively associated with said plurality of associative memory cell groups, a drain node of said first electrically erasable and programmable memory transistor and a drain node of said second electrically erasable and programmable memory transistor of each addressable associative memory cell being coupled to the associated potential line; d) a plurality of detecting lines selectively associated with said plurality of associative memory cell groups, a source node of said first electrically erasable and programmable memory transistor and a source node of said second electrically erasable and programmable memory transistor of each addressable associative memory cell being coupled to the associated detecting line; e) a first variable voltage source for producing voltage levels depending upon the modes of operation; f) a second variable voltage source connectable with said plurality of potential lines, and operative to supply a voltage level to said plurality of potential lines in said registration mode and said retrieval mode; g) a third variable voltage source connectable to said plurality of detecting lines, and operative to supply a voltage level depending upon the modes of operation; h) a data line driver unit supplied with said voltage levels from said first variable voltage source for driving said plurality of pairs of data lines, said data line driver unit being responsive to registration data bits in said registration mode for storing said registration data bits in said plurality of addressable associative memory cells, and operative to selectively energize the data lines of said plurality of pairs so as to cause said first electrically erasable and programmable memory transistor and said second electrically erasable and programmable memory transistor of each addressable associative memory cell to enter into a conductive-state and a non-conductive state depending upon the logic level of one of said registration data bits, said data line driver unit keeping both of said first electrically erasable and programmable memory transistor and said second electrically erasable and programmable memory transistor of one of said plurality of addressable associative memory cells in said conductive state when the registration bit is a don't-care bit, said data line driver unit being responsive to reference data bits in said retrieval mode for selectively energizing said data lines of each pair, and checking said plurality of associative memory cell groups to determine whether or not said reference data bits are matched with said registration data bits stored in one of said plurality of associative memory cell groups, the first electrically erasable and programmable memory transistors and the second electrically erasable and programmable memory transistors of one of said plurality of associative memory cell groups being non-conductive when the registration data bits stored therein are matched with said reference data bits; and i) a current detecting unit connectable to said plurality of detecting lines for detecting current supplied from said second variable voltage source through said plurality of associative memory cell groups storing said registration data bits mismatched with said reference data bits, and operative to produce a hit signal indicative of the match between said reference data bits and said registration data bits when no current is detected.

Claim 8

An associative memory device selectively entering into a registration mode, a retrieval mode and an erasing mode, comprising: a) a plurality of addressable associative memory cells each implemented by a parallel combination of a first electrically erasable and programmable memory transistor and a second electrically erasable and programmable memory transistor, and formed into a plurality of associative memory cell groups; b) a plurality of pairs of data lines selectively provided for said plurality of addressable associative memory cells, the data lines of each pair being coupled to control gate electrodes of said first electrically erasable and programmable memory transistors of the associated addressable associative memory cells and control gate electrodes of said second electrically erasable and programmable memory transistors of the associated addressable associative memory cells; c) a plurality of potential lines selectively associated with said plurality of associative memory cell groups, a drain node of said first electrically erasable and programmable memory transistor and a drain node of said second electrically erasable and programmable memory transistor of each addressable associative memory cell being coupled to the associated potential line; d) a plurality of detecting lines selectively associated with said plurality of associative memory cell groups, a source node of said first electrically erasable and programmable memory transistor and a source node of said second electrically erasable and programmable memory transistor of each addressable associative memory cell being coupled to the associated detecting line; e) a first variable voltage source for producing voltage levels depending upon the modes of operation; f) a second variable voltage source connectable with said plurality of potential lines, and operative to supply a voltage level to said plurality of potential lines in said registration mode and said retrieval mode; g) a third variable voltage source connectable to said plurality of detecting lines, and operative to supply a voltage level depending upon the modes of operation; h) a data line driver unit supplied with said voltage levels from said first variable voltage source for driving said plurality of pairs of data lines, said data line driver unit being responsive to registration data bits in said registration mode for storing said registration data bits in said plurality of addressable associative memory cells, and operative to selectively energize the data lines of said plurality of pairs so as to cause said first electrically erasable and programmable memory transistor and said second electrically erasable and programmable memory transistor of each addressable associative memory cell to enter into a conductive-state and a non-conductive state depending upon the logic level of one of said registration data bits, said data line driver unit keeping both of said first electrically erasable and programmable memory transistor and said second electrically erasable and programmable memory transistor of one of said plurality of addressable associative memory cells in said conductive state when the registration bit is a don't-care bit, said data line driver unit being responsive to reference data bits in said retrieval mode for selectively energizing said data lines of each pair, and checking said plurality of associative memory cell groups to determine whether or not said reference data bits are matched with said registration data bits stored in one of said plurality of associative memory cell groups, the first electrically erasable and programmable memory transistors and the second electrically erasable and programmable memory transistors of one of said plurality of associative memory cell groups being non-conductive when the registration data bits stored therein are matched with said reference data bits; and i) a current detecting unit connectable to said plurality of detecting lines for detecting current supplied from said second variable voltage source through said plurality of associative memory cell groups storing said registration data bits mismatched with said reference data bits, and operative to produce a hit signal indicative of the match between said reference data bits and said registration data bits when no current is detected.