US5451480A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Artical fabrication utilizing lithographic processes
Assignee: AT&T Inc
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Filing: 1994-08-12
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Granted: 1995-09-19
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Expires: 2014-08-12
Abstract
Abstract A procedure for producing an article such as an integrated circuit or a lithographic mask including the step of exposing and developing a resist material during a lithographic process is substantially improved by utilizing a specific technique. In particular, a prototypical plot is made based on typical conditions. Thereafter, this calibration is employable for developing the resist material even at substantially different environmental and processing conditions.
Inventors
- 👤 Anthony E. Novembre
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:54
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
133 words
A process for fabricating an article, said process including an exposure with a dose of radiation of a radiation sensitive material in desired regions to form a latent pattern and development of said pattern through removal of said regions or of non-exposed regions by subjecting said region to a solvent for a development time and an overdevelopment time whereby a suitable dimension for critical features is obtained CHARACTERIZED in that said overdevelopment time is that established from data relating feature dimension to overdevelopment time wherein said data is obtained from a prototypical series of samples comprising exposure of said material with said dose for varying overdevelopment times to establish the overdevelopment time corresponding to a feature size and whereby said feature size is achievable without iterative development and without a strictly controlled environment.
Claim 2
Dependent Claim
133 words
A process for fabricating an article, said process including an exposure with a dose of radiation of a radiation sensitive material in desired regions to form a latent pattern and development of said pattern through removal of said regions or of non-exposed regions by subjecting said region to a solvent for a development time and an overdevelopment time whereby a suitable dimension for critical features is obtained CHARACTERIZED in that said overdevelopment time is that established from data relating feature dimension to overdevelopment time wherein said data is obtained from a prototypical series of samples comprising exposure of said material with said dose for varying overdevelopment times to establish the overdevelopment time corresponding to a feature size and whereby said feature size is achievable without iterative development and without a strictly controlled environment.
Claim 3
Dependent Claim
10 words
The process of claim 1 wherein said radiation comprises electrons.
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein said material comprises poly 1-butene sulfone.
Claim 5
Dependent Claim
16 words
The process of claim 1 wherein said article comprises a lithographic mask or an integrated circuit.
Claim 6
Dependent Claim
11 words
The process of claim 1 wherein said material is positive acting.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-18 | 1999-03-20 | 1999-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-18 | 2003-03-20 | 2003-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-18 | 2007-03-20 | 2007-09-19 | $7700.00 | Window Closed / Lapsed |