Patent US4211045A successfully refreshed from Google Patents.
Patent US5451293A successfully refreshed from Google Patents.
US5451293A
Expired / Lapsed
US
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Method of making a wiring layer wherein the masking material is ashed using an alcohol containing plasma
Assignee: Yamaha Corp
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Filing: 1993-03-16
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Granted: 1995-09-19
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Expires: 2013-03-16
Abstract
Abstract An Al based wiring material layer is formed on an insulating film covering the surface of a semiconductor substrate. The wiring material layer is then selectively etched by a Cl base gas by using a resist layer as a mask, to form a wiring layer. The resist layer is ashed by using a plasma of a mixed gas of an H-and-O containing gas and a F containing gas, such as O 2 /CHF 3 /CH 3 OH, without heating the substrate. Cl components are removed in the form of HCl, and excessive H components are removed in the form of HF to suppress the generation and adherence of H 2 O, thereby improving the anticorrosion performance. The substrate is not heated so that the resist is prevented from a quality change and curing, allowing the resist to be easily removed. Another ashing process may be performed thereafter by using a F containing O 2 gas such as O 2 /CHF 3 .
Inventors
- 👤 Suguru Tabara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:41
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
77 words
A method of making a wiring layer comprising the steps of: (a) forming a wiring material layer on an insulating film on a substrate; (b) patterning said wiring material layer by a selective etching process using a resist film as a mask, and generating a wiring layer; and (c) ashing said resist film by using a plasma of a mixed gas of an alcohol, a F containing gas, and an O 2 gas, without heating said substrate.
Claim 2
Independent Claim
77 words
A method of making a wiring layer comprising the steps of: (a) forming a wiring material layer on an insulating film on a substrate; (b) patterning said wiring material layer by a selective etching process using a resist film as a mask, and generating a wiring layer; and (c) ashing said resist film by using a plasma of a mixed gas of an alcohol, a F containing gas, and an O 2 gas, without heating said substrate.
Claim 3
Dependent Claim
44 words
A method of making a wiring layer according to claim 1, further comprising a step of performing an additional ashing process, after said ashing step (c), by using a plasma of a mixed gas of a F containing gas and an O 2 gas.
Claim 4
Dependent Claim
47 words
A method of making a wiring layer according to claim 1, wherein said H and O containing gas is at least one of the gases selected from the group consisting of CH 3 OH, C 2 H 5 OH, CH 3 COCH, and a mixture gases thereof.
Claim 5
Dependent Claim
45 words
A method of making wiring layer according to claim 1, wherein said F containing gas is a gas selected from the group consisting of CHF 3 , CF 4 , C 2 F 6 , NF 2 , SF 6 , and mixture gases thereof.
Claim 6
Dependent Claim
25 words
A method of making wiring layer according to claim 1, wherein said step (b) is performed by using a Cl based gas as an etchant.
Claim 7
Independent Claim
50 words
A method of making a wiring layer having a wiring pattern defined by mask material on a substrate, comprising the steps of: (a) ashing the mask material in a plasma ambient comprising a first mixture gas of CH 3 OH, CHF 3 and O 2 and simultaneously cooling the substrate.
Claim 8
Independent Claim
50 words
A method of making a wiring layer having a wiring pattern defined by mask material on a substrate, comprising the steps of: (a) ashing the mask material in a plasma ambient comprising a first mixture gas of CH 3 OH, CHF 3 and O 2 and simultaneously cooling the substrate.
Claim 9
Dependent Claim
39 words
A method according to claim 6, further comprising the steps of: (b) following step (a), ashing the mask material in a plasma ambient comprising a second mixture gas of CHF 3 and O 2 and simultaneously cooling the substrate.
Claim 10
Independent Claim
62 words
A method of making a wiring layer having a wiring pattern defined by mask material on a substrate, comprising the steps of: (a) ashing the mask material in a plasma ambient comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element, without heating the substrate.
Claim 11
Independent Claim
62 words
A method of making a wiring layer having a wiring pattern defined by mask material on a substrate, comprising the steps of: (a) ashing the mask material in a plasma ambient comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element, without heating the substrate.
Claim 12
Dependent Claim
45 words
A method according to claim 8, further comprising the steps of: (b) following the step (a), ashing the mask material in a plasma ambient comprising a fourth gas having fluorine as a constituent element and a fifth gas having oxygen as a sole constituent element.
Claim 13
Dependent Claim
21 words
A method according to claim 9 further comprising the step of: (c) cooling the substrate during step (a) and step (b).
Claim 14
Dependent Claim
58 words
A method according to claim 9 further comprising the steps of: (d) forming a wiring material layer on an insulating film on the substrate; and (e) providing the mask material with a mask pattern for selectively etching wiring material layer in conformity with the mask pattern, wherein steps (d) and (e) are performed before step (a) is performed.
Claim 15
Dependent Claim
36 words
A method according to claim 9 wherein the first gas comprises at least one gas selected from a group consisting of CH 3 OH, C 2 H 5 OH, CH 3 COCH 3 and mixtures thereof.
Claim 16
Dependent Claim
44 words
A method according to claim 9 wherein the second gas and fourth gas comprise at least one of gas selected from a group consisting of CHF 3 , CF 4 , C 2 F 6 , NF 2 , SF 6 and mixtures thereof.
Claim 17
Dependent Claim
35 words
A method according to claim 9 wherein, during step (a), the first, second, and third gases are supplied at flow rates of 20 to 100 sccm, 5 to 20 sccm, and about 200 sccm, respectively.
Claim 18
Dependent Claim
28 words
A method according to claim 9 wherein, during step (b), the fourth and fifth gases are supplied at flow rates of about 5 sccm and 100 sccm, respectively.
Claim 19
Dependent Claim
13 words
A method according to claim 9, wherein the mask material is a resist.
Claim 20
Dependent Claim
13 words
A method according to claim 9, wherein the substrate comprises a semiconductor material.
Claim 21
Dependent Claim
22 words
A method according to claim 10 wherein, during step (c), the substrate is maintained at a temperature of 20° C. or below.
Claim 22
Dependent Claim
23 words
A method according to claim 11, wherein the wiring material layer comprises a metal selected from the group consisting of Al--Si and Al--Si--Cu.
Claim 23
Independent Claim
58 words
A method of making a wiring layer having a wiring pattern defined by mask material on a substrate, comprising the steps of: (a) removing the mask material in a plasma environment comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element.
Claim 24
Independent Claim
58 words
A method of making a wiring layer having a wiring pattern defined by mask material on a substrate, comprising the steps of: (a) removing the mask material in a plasma environment comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element.
Claim 25
Independent Claim
55 words
A method according to claims 20, further comprising the steps of: (b) after the step (a), removing the mask material in a plasma environment comprising a fourth gas having fluorine as a constituent element and a fifth gas having fluorine as a consituent element and a fifth gas having oxygen as a sole constituent element.
Claim 26
Independent Claim
80 words
A method of making a wiring layer comprising the steps of: (a) forming a barrier metal layer and a conductive material layer to collectively form a wiring layer on a substrate; (b) patterning the wiring layer through a mask; and (c) ashing the mask in a first plasma ambient comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element, without heating the substrate.
Claim 27
Independent Claim
80 words
A method of making a wiring layer comprising the steps of: (a) forming a barrier metal layer and a conductive material layer to collectively form a wiring layer on a substrate; (b) patterning the wiring layer through a mask; and (c) ashing the mask in a first plasma ambient comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element, without heating the substrate.
Claim 28
Dependent Claim
45 words
A method according to claim 22, further comprising the steps of: (d) following the step (c), ashing the mask in a second plasma ambient comprising a fourth gas having fluorine as a constituent element and a fifth gas having oxygen as a sole constituent element.
Claim 29
Dependent Claim
21 words
A method according to claim 23, further comprising the steps of: (e) cooling the substrate during the steps (c) and (d).
Claim 30
Dependent Claim
38 words
A method according to claim 22, wherein the first gas comprises at least one species of gas selected from a group consisting of CH 3 OH, C 2 H 5 OH, CH 3 COCH 3 and mixtures thereof.
Claim 31
Dependent Claim
43 words
A method according to claim 23, wherein the second gas and fourth gas each comprise at least one species of gas selected from a group consisting of CHF 3 , CF 4 , C 2 F 6 , SF 6 and mixtures thereof.
Claim 32
Dependent Claim
13 words
A method according to claim 22, wherein the mask is a resist layer.
Claim 33
Dependent Claim
23 words
A method according to claim 24, wherein during the step (e), the substrate is maintained at a temperature of 20° C or below.
Claim 34
Dependent Claim
23 words
A method according to claim 22, wherein the conductive material layer comprises a metal selected from a group consisting of Al--Si and Al--Si--Cu.
Claim 35
Dependent Claim
13 words
A method according to claim 22, wherein the barrier metal layer comprises TiN.
Claim 36
Independent Claim
111 words
A method of making a wiring layer comprising the steps of: (a) forming a barrier metal layer and a conductive material layer to collectively form a patterned wiring layer on a substrate; (b) subjecting the substrate to a first plasma ambient comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element, without heating the substrate; and (c) following the step (b), subjecting the substrate to a second plasma ambient comprising a fourth gas having fluorine as a constituent element and a fifth gas having oxygen as a sole constituent element, without heating the substrate.
Claim 37
Independent Claim
111 words
A method of making a wiring layer comprising the steps of: (a) forming a barrier metal layer and a conductive material layer to collectively form a patterned wiring layer on a substrate; (b) subjecting the substrate to a first plasma ambient comprising a first gas comprising an alcohol, a second gas having fluorine as a constituent element and a third gas having oxygen as a sole constituent element, without heating the substrate; and (c) following the step (b), subjecting the substrate to a second plasma ambient comprising a fourth gas having fluorine as a constituent element and a fifth gas having oxygen as a sole constituent element, without heating the substrate.
Claim 38
Dependent Claim
21 words
A method according to claim 31, further comprising the steps of: (d) cooling the substrate during the steps (b) and (c).
Claim 39
Dependent Claim
38 words
A method according to claim 31, wherein the first gas comprises at least one species of gas selected from a group consisting of CH 3 OH, C 2 H 5 OH, CH 3 COCH 3 and mixtures thereof.
Claim 40
Dependent Claim
43 words
A method according to claim 31, wherein the second gas and fourth gas each comprise at least one species of gas selected from a group consisting of CHF 3 , CF 4 , C 2 F 6 , SF 6 and mixtures thereof.
Claim 41
Dependent Claim
23 words
A method according to claim 31, wherein the conductive material layer comprises a metal selected from a group consisting of Al--Si and Al--Si--Cu.
Claim 42
Dependent Claim
13 words
A method according to claim 31, wherein the barrier metal layer comprises TiN.
References Cited (Backward Citations)
JPS5887276A
Cited
JPH0277125A
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US4961820A
Cited
US5057187A
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JPH0383337A
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-09-18 | 1999-03-20 | 1999-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-18 | 2003-03-20 | 2003-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-18 | 2007-03-20 | 2007-09-19 | $7700.00 | Window Closed / Lapsed |