US5449933A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ferroelectric thin film element
Assignee: Murata Manufacturing Co Ltd
•
Filing: 1993-03-30
•
Granted: 1995-09-12
•
Expires: 2013-03-30
Abstract
Abstract A ferroelectric thin film element 1 constructed by forming a MgO thin film 3 oriented in the direction (100), a lower electrode 4 composed of an alloy thin film of a Ni--Cr--Al system oriented in the direction (100), a ferroelectric thin film 5 composed of a PbTiO 3 thin film oriented in the direction (111), and an upper electrode 6 in this order on a substrate composed of (100) silicon 2.
Inventors
- 👤 Satoshi Shindo
- 👤 Toshio Ogawa
- 👤 Atsuo Senda
- 👤 Tohru Kasanami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 15:00
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
108 words
A ferroelectric thin film element comprising: a monocrystalline substrate composed of (100) crystal plane oriented silicon; a crystalline MgO thin film formed on said silicon substrate and oriented in the (100) crystal plane; a crystalline lower electrode formed on said MgO thin film and composed of an alloy thin film of Ni--Cr--Al alloy or an alloy thin film of Ni--Al alloy oriented in the (100) crystal plane; a crystalline ferroelectric thin film of PbTiO 3 system or Pb (Ti 1-x Zr x ) O 3 system formed on said lower electrode and oriented in the (111) crystal plane; and an upper electrode formed on said ferroelectric thin film.
Claim 2
Dependent Claim
108 words
A ferroelectric thin film element comprising: a monocrystalline substrate composed of (100) crystal plane oriented silicon; a crystalline MgO thin film formed on said silicon substrate and oriented in the (100) crystal plane; a crystalline lower electrode formed on said MgO thin film and composed of an alloy thin film of Ni--Cr--Al alloy or an alloy thin film of Ni--Al alloy oriented in the (100) crystal plane; a crystalline ferroelectric thin film of PbTiO 3 system or Pb (Ti 1-x Zr x ) O 3 system formed on said lower electrode and oriented in the (111) crystal plane; and an upper electrode formed on said ferroelectric thin film.
Claim 3
Dependent Claim
39 words
The ferroelectric thin film element according to claim 1, wherein said lower electrode composed of the alloy thin film of Ni--Cr--Al alloy or the alloy thin film of Ni--Al alloy is deposited on said MgO thin film by sputtering.
Claim 4
Dependent Claim
22 words
The ferroelectric thin film element according to claim 1, wherein said ferroelectric thin film is deposited on said lower electrode by sputtering.
Claim 5
Dependent Claim
31 words
The ferroelectric thin film element according to claim 1, wherein said upper electrode is composed of the same alloy thin film as the alloy thin film composing said crystalline lower electrode.
Claim 6
Dependent Claim
30 words
The ferroelectric thin film element according to claim 1, wherein said lower electrode is composed of an alloy thin film of Ni--Cr--Al alloy oriented in the direction (100) crystal plane.
Claim 7
Dependent Claim
29 words
The ferroelectric thin film element according to claim 1, wherein said lower electrode is composed of an alloy thin film of Ni--Al alloy oriented in the (100) crystal plane.
Claim 8
Dependent Claim
20 words
The ferroelectric thin film element according to claim 6 in which the alloy thin film contains 2.5 to 8% aluminum.
Claim 9
Dependent Claim
31 words
The ferroelectric thin film element according to claim 7 wherein said upper electrode is composed of the same alloy thin film as the alloy thin film of said crystalline lower electrode.
Claim 10
Dependent Claim
24 words
The ferroelectric thin film element according to claim 5 wherein said alloy thin film contains 8 to 25% chromium and 2.5 to 8% aluminum.
Claim 11
Dependent Claim
31 words
The ferroelectric thin film element according to claim 9 wherein said upper electrode is composed of the same alloy thin film as the alloy thin film of said crystalline lower electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-11 | 1999-03-13 | 1999-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-11 | 2003-03-13 | 2003-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-11 | 2007-03-13 | 2007-09-12 | $7700.00 | Window Closed / Lapsed |