Virtual ground type nonvolatile semiconductor memory device capable of simultaneously accessing two memory cells

Claim 2

A virtual ground type nonvolatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of floating-gate type nonvolatile memory cells, each connected between two adjacent ones of said column lines and connected to one of said row lines; a row selecting means, connected to said row lines, for selecting one of said row lines to apply a first definite voltage thereto during a read mode and apply a write power supply voltage thereto during a write mode; a read-mode column selecting means, connected to said column lines, for selecting two adjacent ones of said column lines to transmit data therefrom, and for applying a second definite voltage to two of said column lines each immediately on one side of said two adjacent column lines during a read mode; and a write-mode column selecting means, connected to said column lines, for selecting two adjacent ones of said column lines to apply the second definite voltage thereto, and for applying first and second write voltages to two of said column lines each immediately on one side of said two adjacent column lines during a write mode.

Claim 3

A device as set forth in claim 1, wherein said read-mode column selecting means applies the second definite voltage to all of said column lines except for said two adjacent column lines.

Claim 4

A device as set forth in claim 1, wherein said write-mode column selecting means applies the first write voltage to all of said column lines located on one side of said two adjacent column lines and applies the second write voltage to all of said column lines located on the other side of said two adjacent column lines.

Claim 5

A virtual ground type nonvolatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of floating-gate type nonvolatile memory cells, each connected between two adjacent ones of said column lines and connected to one of said row lines; a row selecting means, connected to said row lines, for selecting one of said row lines to apply a first definite voltage thereto during a read mode; and a read-mode column selecting means, connected to said column lines, for selecting two adjacent ones of said column lines to transmit data therefrom, and for applying a second definite voltage to two of said column lines each immediately on one side of said two adjacent column lines during a read mode.

Claim 6

A virtual ground type nonvolatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of floating-gate type nonvolatile memory cells, each connected between two adjacent ones of said column lines and connected to one of said row lines; a row selecting means, connected to said row lines, for selecting one of said row lines to apply a first definite voltage thereto during a read mode; and a read-mode column selecting means, connected to said column lines, for selecting two adjacent ones of said column lines to transmit data therefrom, and for applying a second definite voltage to two of said column lines each immediately on one side of said two adjacent column lines during a read mode.

Claim 7

A device as set forth in claim 4, wherein said read-mode column selecting means applies the second definite voltage to all of said column lines except for said two adjacent column lines.

Claim 8

A virtual ground type nonvolatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of floating-gate type nonvolatile memory cells, each connected between two adjacent ones of said column lines and connected to one of said row lines; a row selecting means, connected to said row lines, for selecting one of said row lines to apply a write power supply voltage thereto during a write mode; and a write-mode column selecting means, connected to said column lines, for selecting two adjacent ones of said column lines to apply the second definite voltage thereto, and for applying first and second write voltages to two of said column lines each immediately on one side of said two adjacent column lines during a write mode.

Claim 9

A virtual ground type nonvolatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of floating-gate type nonvolatile memory cells, each connected between two adjacent ones of said column lines and connected to one of said row lines; a row selecting means, connected to said row lines, for selecting one of said row lines to apply a write power supply voltage thereto during a write mode; and a write-mode column selecting means, connected to said column lines, for selecting two adjacent ones of said column lines to apply the second definite voltage thereto, and for applying first and second write voltages to two of said column lines each immediately on one side of said two adjacent column lines during a write mode.

Claim 10

A device as set forth in claim 6, wherein said write-mode column selecting means applies the first write voltage to all of said column lines located on one side of said two adjacent column lines and applies the second write voltage to all of said column lines located on the other side of said two adjacent column lines.

Claim 11

A virtual ground type nonvolatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of floating-gate type nonvolatile memory cells, each connected between two adjacent ones of said column lines and connected to one of said row lines; first and second data read circuits; activating/deactivating circuits, connected to said first and second data circuits, for activating said first and second data read circuits during a read mode and for deactivating said first and second data read circuits to apply a first definite voltage to inputs thereof during a write mode, a row selecting means, connected to said row lines, for selecting one of said row lines to apply a second definite voltage thereto during a read mode and apply a write power supply voltage thereto during a write mode; first and second write control circuits for generating the first definite voltage during a read mode, and for generating first and second write voltages in accordance with write data during a write mode; first column selecting means, connected to said column lines and said data read circuits, for selecting two adjacent ones of said column lines to connect said two adjacent column lines to said first and second data read circuits, respectively; and second column selecting means, connected to said column lines and said first and second write control circuits, for connecting all of said column lines located on one side of said two adjacent column lines selected by said first selecting column lines to said first write control circuit and for connecting all of said column lines located on the other side of said two adjacent column lines selected by said first selecting column lines to said second write control circuit.

Claim 12

A virtual ground type nonvolatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of floating-gate type nonvolatile memory cells, each connected between two adjacent ones of said column lines and connected to one of said row lines; first and second data read circuits; activating/deactivating circuits, connected to said first and second data circuits, for activating said first and second data read circuits during a read mode and for deactivating said first and second data read circuits to apply a first definite voltage to inputs thereof during a write mode, a row selecting means, connected to said row lines, for selecting one of said row lines to apply a second definite voltage thereto during a read mode and apply a write power supply voltage thereto during a write mode; first and second write control circuits for generating the first definite voltage during a read mode, and for generating first and second write voltages in accordance with write data during a write mode; first column selecting means, connected to said column lines and said data read circuits, for selecting two adjacent ones of said column lines to connect said two adjacent column lines to said first and second data read circuits, respectively; and second column selecting means, connected to said column lines and said first and second write control circuits, for connecting all of said column lines located on one side of said two adjacent column lines selected by said first selecting column lines to said first write control circuit and for connecting all of said column lines located on the other side of said two adjacent column lines selected by said first selecting column lines to said second write control circuit.