US5448126A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface acoustic wave-semiconductor composite device
Assignee: Panasonic Holdings Corp
•
Filing: 1994-10-04
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Granted: 1995-09-05
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Expires: 2014-10-04
Abstract
Abstract In a surface acoustic wave-semiconductor composite device such as a surface acoustic wave convolver, a piezoelectric plate and a semiconductor plate are layered directly or with a gap between them. Input electrodes are provided to apply a plurality of input signals to the piezoelectric plate to excite surface acoustic waves, while an output electrode is provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate. In the layered structure, the semiconductor plate is bonded directly to the piezoelectric plate by hydrogen bonds between hydroxyl groups or by covalent or ionic bonds of oxygen atoms with component atoms of the piezoelectric and semiconductor plates. In modified structures, an inorganic thin film is applied to one of the piezoelectric and semiconductor plates, while the inorganic thin film is bonded directly to the other of the two plates. The surface acoustic wave-semiconductor composite device can be prepared by using direct bonding in an atomic order, with a thickness of a direct bonding layer of 20 nm or less. Then, it has a low insersion loss and a high efficiency, and it is stable thermally and mechanically. Further, its characteristics can be reproduced well.
Inventors
- 👤 Kazuo Eda
- 👤 Yutaka Taguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:19
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/0296; H03H9/02976
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
86 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds between hydroxyl groups; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 2
Dependent Claim
86 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds between hydroxyl groups; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 3
Dependent Claim
35 words
The device according to claim 1, wherein a thickness of a direct bonding layer due to the hydrogen bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 4
Dependent Claim
27 words
The device according to claim 1, wherein said input electrodes are formed on said piezoelectric plate at the interface of said piezoelectric plate with said semiconductor plate.
Claim 5
Dependent Claim
27 words
The device according to claim 1, wherein said input electrodes are formed on said semiconductor plate at the interface of said piezoelectric plate with said semiconductor plate.
Claim 6
Dependent Claim
25 words
The device according to claim 1, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 7
Dependent Claim
99 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 8
Dependent Claim
99 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 9
Dependent Claim
37 words
The device according to claim 6, wherein a thickness of a direct bonding layer due to the covalent or ionic bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 10
Dependent Claim
27 words
The device according to claim 6, wherein said input electrodes are formed on said piezoelectric plate at the interface of said piezoelectric plate with said semiconductor plate.
Claim 11
Dependent Claim
27 words
The device according to claim 6, wherein said input electrodes are formed on said semiconductor plate at the interface of said piezoelectric plate with said semiconductor plate.
Claim 12
Dependent Claim
25 words
The device according to claim 5, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 13
Dependent Claim
108 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly by hydrogen bonds between hydroxyl groups to the other of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 14
Dependent Claim
108 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly by hydrogen bonds between hydroxyl groups to the other of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 15
Dependent Claim
35 words
The device according to claim 11, wherein a thickness of a direct bonding layer due to the hydrogen bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 16
Dependent Claim
16 words
The device according to claim 11, wherein said input electrodes are embedded in said inorganic film.
Claim 17
Dependent Claim
25 words
The device according to claim 11, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 18
Dependent Claim
124 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 19
Dependent Claim
124 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 20
Dependent Claim
37 words
The device according to claim 15, wherein a thickness of a direct bonding layer due to the covalent or ionic bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 21
Dependent Claim
16 words
The device according to claim 15, wherein said input electrodes are embedded in said inorganic film.
Claim 22
Dependent Claim
25 words
The device according to claim 15, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 23
Dependent Claim
17 words
The device according to claim 15, wherein said inorganic film is made of silicon or a silicide.
Claim 24
Dependent Claim
111 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds of hydroxyl groups, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 25
Dependent Claim
111 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds of hydroxyl groups, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 26
Dependent Claim
35 words
The device according to claim 20, wherein a thickness of a direct bonding layer due to the hydrogen bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 27
Dependent Claim
25 words
The device according to claim 20, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 28
Dependent Claim
124 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 29
Dependent Claim
124 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 30
Dependent Claim
37 words
The device according to claim 23, wherein a thickness of a direct bonding layer due to the covalent or ionic bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 31
Dependent Claim
25 words
The device according to claim 23, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 32
Dependent Claim
140 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by hydrogen bonds of hydroxyl groups, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 33
Dependent Claim
140 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by hydrogen bonds of hydroxyl groups, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 34
Dependent Claim
35 words
The device according to claim 26, wherein a thickness of a direct bonding layer due to the hydrogen bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 35
Dependent Claim
25 words
The device according to claim 26, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 36
Dependent Claim
16 words
The device according to claim 26, wherein inorganic film is made of silicon or a silicide.
Claim 37
Dependent Claim
156 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 38
Dependent Claim
156 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate; input electrodes provided to apply a plurality of input signals to the piezoelectric plate, whereby surface acoustic waves are excited in the piezoelectric plate by applying the input signals; and an output electrode provided to detect a convolution output signal of a change in electric potential of the semiconductor plate at an interface of the semiconductor plate with the piezoelectric plate.
Claim 39
Dependent Claim
35 words
The device according to claim 30, wherein a thickness of a direct bonding layer due to the hydrogen bonds at the interface between said piezoelectric plate and said semiconductor plate is 20 nm or less.
Claim 40
Dependent Claim
25 words
The device according to claim 30, wherein said piezoelectric plate is made of a single crystal of lithium niobate, lithium tantalate, lithium borate or quartz.
Claim 41
Dependent Claim
16 words
The device according to claim 30, wherein inorganic film is made of silicon or a silicide.
Claim 42
Dependent Claim
26 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds between hydroxyl groups.
Claim 43
Dependent Claim
26 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds between hydroxyl groups.
Claim 44
Dependent Claim
39 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate.
Claim 45
Dependent Claim
39 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate.
Claim 46
Dependent Claim
48 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly by hydrogen bonds between hydroxyl groups to the other of the piezoelectric plate and the semiconductor plate.
Claim 47
Dependent Claim
48 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly by hydrogen bonds between hydroxyl groups to the other of the piezoelectric plate and the semiconductor plate.
Claim 48
Dependent Claim
64 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate.
Claim 49
Dependent Claim
64 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate.
Claim 50
Dependent Claim
51 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds between hydroxyl groups, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate.
Claim 51
Dependent Claim
51 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by hydrogen bonds between hydroxyl groups, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate.
Claim 52
Dependent Claim
64 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate.
Claim 53
Dependent Claim
64 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; and a semiconductor plate bonded directly to the piezoelectric plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate and the semiconductor plate, which semiconductor plate having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the piezoelectric plate.
Claim 54
Dependent Claim
80 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by hydrogen bonds between hydroxyl groups, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate.
Claim 55
Dependent Claim
80 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by hydrogen bonds between hydroxyl groups, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate.
Claim 56
Dependent Claim
96 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate.
Claim 57
Dependent Claim
96 words
A surface acoustic wave-semiconductor composite device comprising: a piezoelectric plate; a semiconductor plate; and an inorganic film applied to one of the piezoelectric plate and the semiconductor plate and bonded directly to the other of the piezoelectric plate and the semiconductor plate by covalent or ionic bonds between oxygen atoms and component atoms of the piezoelectric plate, the inorganic film and the semiconductor plate, which inorganic film having a gap except portions bonded directly to the piezoelectric plate, which gap having a constant distance relative to the other of the piezoelectric plate and the semiconductor plate.
References Cited (Backward Citations)
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