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US5447887A
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US
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Method for capping copper in semiconductor devices
Assignee: Apple Inc
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Filing: 1994-04-01
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Granted: 1995-09-05
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Expires: 2014-04-01
Abstract
Abstract A silicon nitride layer (34) has improved adhesion to underlying copper interconnect members (30) through the incorporation of an intervening copper silicide layer (32). Layer (32) is formed in-situ with a plasma enhanced chemical vapor deposition (PECVD) process for depositing silicon nitride layer (34). To form layer (32), a semiconductor substrate (12) is provided having a desired copper pattern formed thereon. The copper pattern may include copper interconnects, copper plugs, or other copper members. The substrate is placed into a PECVD reaction chamber. Silane is introduced into the reaction chamber in the absence of a plasma to form a copper silicide layer on any exposed copper surfaces. After a silicide layer of a sufficient thickness (for example, 10 to 100 angstroms) is formed, PECVD silicon nitride is deposited. The copper silicide layer improves adhesion, such that silicon nitride layer is less prone to peeling away from underlying copper members.
Inventors
- 👤 Stanley M. Filipiak
- 👤 Avgerinos Gelatos
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:48
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/037; H10W20/055; H10W20/064; H10W20/071; H10W20/074; H10W20/077
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
50 words
A method for making a semiconductor device, comprising the steps of: forming a copper member within a semiconductor device, wherein the copper member has an exposed surface; forming a copper silicide layer on the exposed copper member surface; and depositing a layer comprising silicon nitride on the copper silicide layer.
Claim 2
Independent Claim
50 words
A method for making a semiconductor device, comprising the steps of: forming a copper member within a semiconductor device, wherein the copper member has an exposed surface; forming a copper silicide layer on the exposed copper member surface; and depositing a layer comprising silicon nitride on the copper silicide layer.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein the step of depositing a silicon nitride layer comprises depositing a silicon nitride layer in-situ with the step of forming a copper silicide layer.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the step of forming a copper silicide layer comprises reacting the exposed copper member surface with silane.
Claim 5
Dependent Claim
37 words
The method of claim 1 wherein the step of forming a copper silicide layer is performed in a substantially plasma-free environment, and the step of depositing a layer comprising silicon nitride is performed in a plasma environment.
Claim 6
Dependent Claim
46 words
The method of claim 1 wherein the copper member has an original thickness, and wherein the step of forming a copper silicide layer comprises reacting the exposed copper member surface such that less than ten percent of the original thickness of the copper member is consumed.
Claim 7
Independent Claim
133 words
A method for making a semiconductor device, comprising the steps of: providing a semiconductor substrate; forming a dielectric layer overlying the substrate, the dielectric layer having an opening formed therein; depositing a copper layer over the dielectric layer such that copper substantially fills the opening; removing any portions of the copper layer beyond the opening, leaving a surface of the copper layer within the opening exposed; and capping the copper surface with a diffusion barrier material using a chemical vapor deposition process; wherein the step of capping comprises the steps of: forming a copper silicide layer by reacting a vapor species comprising silicon with the copper surface; and then forming a layer comprising silicon nitride on the copper silicide layer by reacting the vapor species comprising silicon with a vapor species comprising nitrogen.
Claim 8
Independent Claim
133 words
A method for making a semiconductor device, comprising the steps of: providing a semiconductor substrate; forming a dielectric layer overlying the substrate, the dielectric layer having an opening formed therein; depositing a copper layer over the dielectric layer such that copper substantially fills the opening; removing any portions of the copper layer beyond the opening, leaving a surface of the copper layer within the opening exposed; and capping the copper surface with a diffusion barrier material using a chemical vapor deposition process; wherein the step of capping comprises the steps of: forming a copper silicide layer by reacting a vapor species comprising silicon with the copper surface; and then forming a layer comprising silicon nitride on the copper silicide layer by reacting the vapor species comprising silicon with a vapor species comprising nitrogen.
Claim 9
Dependent Claim
30 words
The method of claim 6 wherein the step of forming a copper silicide layer comprises reacting the vapor species comprising silicon with the copper surface in absence of a plasma.
Claim 10
Dependent Claim
32 words
The method of claim 7 wherein the step of forming a layer comprising silicon nitride comprises reacting the vapor species comprising silicon with the vapor comprising nitrogen in presence of a plasma.
Claim 11
Dependent Claim
27 words
The method of claim 6 wherein the step of forming a copper silicide layer comprises forming a copper silicide layer by reacting silane with the copper surface.
Claim 12
Dependent Claim
27 words
The method of claim 9 wherein the step of forming a layer comprising silicon nitride comprises forming a layer comprising silicon nitride by reacting silane and ammonia.
Claim 13
Dependent Claim
50 words
The method of claim 6 wherein the copper within the opening has a thickness, after any copper beyond the opening is removed, and wherein the step of forming a copper silicide layer comprises forming a copper silicide layer such that less than ten percent of the copper thickness is consumed.
Claim 14
Dependent Claim
30 words
The method of claim 6 wherein the step of forming a copper silicide layer comprises forming a copper silicide layer having a thickness between approximately ten to one hundred angstroms.
Claim 15
Dependent Claim
27 words
The method of claim 6 wherein the step of forming a layer comprising silicon nitride is performed in-situ with the step of forming a copper silicide layer.
Claim 16
Dependent Claim
42 words
The method of claim 6 wherein the opening in the dielectric has sidewalls and a bottom, and further comprising the step of lining the sidewalls and bottom of the opening with a conductive diffusion barrier material, prior to depositing the copper layer.
Claim 17
Dependent Claim
25 words
The method of claim 14 wherein the step of lining comprises lining with a material selected from a group consisting of tantalum, titanium, and tungsten.
Claim 18
Dependent Claim
16 words
The method of claim 6 wherein the step of removing comprises removing by chemical mechanical polishing.
Claim 19
Independent Claim
94 words
A method for making a semiconductor device comprising the sequential steps of: providing a semiconductor substrate having an overlying dielectric layer; forming a copper member overlying the substrate, the copper member having an exposed surface; placing the substrate in a chemical vapor deposition reaction chamber; introducing silane into the reaction chamber to form a copper silicide layer on the exposed copper surface; generating a plasma within the chamber; and introducing silane and ammonia into the reaction chamber in presence of the plasma to deposit a silicon nitride capping layer on the copper silicide layer.
Claim 20
Independent Claim
94 words
A method for making a semiconductor device comprising the sequential steps of: providing a semiconductor substrate having an overlying dielectric layer; forming a copper member overlying the substrate, the copper member having an exposed surface; placing the substrate in a chemical vapor deposition reaction chamber; introducing silane into the reaction chamber to form a copper silicide layer on the exposed copper surface; generating a plasma within the chamber; and introducing silane and ammonia into the reaction chamber in presence of the plasma to deposit a silicon nitride capping layer on the copper silicide layer.
Claim 21
Dependent Claim
18 words
The method of claim 17 wherein the step of forming a copper member comprises forming a copper interconnect.
Claim 22
Dependent Claim
39 words
The method of claim 17 wherein the step of forming a copper member comprises forming a copper member within an opening in the dielectric layer, and wherein the exposed copper surface is an upper surface of the copper member.
Claim 23
Dependent Claim
46 words
The method of claim 17 wherein the copper member has an original thickness, and wherein the step of introducing silane into the reaction chamber to form a copper silicide layer is terminated prior to consuming approximately ten percent of the original thickness of the copper member.
Claim 24
Dependent Claim
18 words
The method of claim 1 wherein the step of forming a copper member comprises forming a copper interconnect.
References Cited (Backward Citations)
US4910169A
Cited
JPH04192527A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-09-04 | 1999-03-06 | 1999-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-04 | 2003-03-06 | 2003-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-04 | 2007-03-06 | 2007-09-05 | $7700.00 | Window Closed / Lapsed |