Abstract A method for fabricating a capacitor of a semiconductor memory device, capable of forming a capacitor having a relatively high capacitance as compared to an occupied area of a corresponding memory cell and yet exhibiting a minimized topology, in a simplified manner, thereby achieving improvements in the reliability and integration degree of the semiconductor memory device by forming an interlayer insulating film over a semiconductor substrate, removing a selected portion of the interlayer insulating film to form a contact hole through which a predetermined surface portion of semiconductor substrate corresponding to a region defined as a contact for the capacitor is partially exposed, burying a tungsten in the contact hole to form a contact plug, forming a storage electrode on the interlayer insulating film such that the storage electrode is in contact with the contact plug, selectively etching the storage electrode to a predetermined depth to form a plurality of recesses at the storage electrode, and sequentially forming a dielectric film and a plate electrode over the entire exposed surface of the recessed storage electrode.
A method for fabricating a capacitor of a semiconductor memory device, comprising the steps of: preparing a semiconductor substrate; forming an interlayer insulating film over the semiconductor substrate; removing a portion of the interlayer insulating film, thereby forming a contact hole through which a surface portion of the semiconductor substrate corresponding to a region defined as a contact for the capacitor is partially exposed; burying tungsten in the contact hole, thereby forming a contact plug; forming a storage electrode on the interlayer insulating film such that the storage electrode is in electrical contact with the contact plug; selectively etching the storage electrode to a depth, thereby forming at least two recesses in the storage electrode; and sequentially forming a dielectric film and a plate electrode over the storage electrode with said at least two recesses.
Claim 2
Independent Claim
135 words
A method for fabricating a capacitor of a semiconductor memory device, comprising the steps of: preparing a semiconductor substrate; forming an interlayer insulating film over the semiconductor substrate; removing a portion of the interlayer insulating film, thereby forming a contact hole through which a surface portion of the semiconductor substrate corresponding to a region defined as a contact for the capacitor is partially exposed; burying tungsten in the contact hole, thereby forming a contact plug; forming a storage electrode on the interlayer insulating film such that the storage electrode is in electrical contact with the contact plug; selectively etching the storage electrode to a depth, thereby forming at least two recesses in the storage electrode; and sequentially forming a dielectric film and a plate electrode over the storage electrode with said at least two recesses.
Claim 3
Dependent Claim
15 words
A method in accordance with claim 1, wherein the storage electrode is made of polysilicon.
Claim 4
Dependent Claim
27 words
A method in accordance with claim 1, wherein the dielectric film has a composite structure constituted by an oxide film, a nitride film and another oxide film.