US5446330A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface acoustic wave device having a lamination structure
Assignee: Panasonic Holdings Corp
•
Filing: 1994-03-15
•
Granted: 1995-08-29
•
Expires: 2014-03-15
Abstract
Abstract A surface acoustic wave device includes: a single crystal piezoelectric substrate; a single crystal piezoelectric thin plate formed on the single crystal piezoelectric substrate, the single crystal piezoelectric thin plate being bonded to the single crystal piezoelectric substrate by direct bonding; and interdigital transducers formed on the single crystal piezoelectric thin plate, for exciting a surface acoustic wave in at least the single crystal piezoelectric thin plate.
Inventors
- 👤 Kazuo Eda
- 👤 Yutaka Taguchi
- 👤 Keiji Onishi
- 👤 Shun-ichi Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:58
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/02818; H03H9/02834; H03H3/00; H03H3/007; H03H3/08; H03H9/02543; H03H9/02574
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
83 words
A surface acoustic wave device comprising: a single crystal piezoelectric substrate; a single crystal piezoelectric thin plate formed on said single crystal piezoelectric substrate, said single crystal piezoelectric thin plate being bonded to said single crystal piezoelectric substrate through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers formed on said single crystal piezoelectric thin plate, for exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 2
Dependent Claim
83 words
A surface acoustic wave device comprising: a single crystal piezoelectric substrate; a single crystal piezoelectric thin plate formed on said single crystal piezoelectric substrate, said single crystal piezoelectric thin plate being bonded to said single crystal piezoelectric substrate through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers formed on said single crystal piezoelectric thin plate, for exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 3
Dependent Claim
71 words
A surface acoustic wave device according to claim 1, wherein surfaces of said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate are subjected to flattening, mirror-polishing, cleaning, and hydrophilic processes and said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate constitute a lamination structure by stacking said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate and then by conducting a heat treatment.
Claim 4
Dependent Claim
29 words
A surface acoustic wave device according to claim 1, wherein said single crystal piezoelectric thin plate has a different sound velocity from that of said single crystal piezoelectric substrate.
Claim 5
Dependent Claim
34 words
A surface acoustic wave device according to claim 1, wherein the temperature dependence of the sound velocity of said single crystal piezoelectric thin plate is greater than that of said single crystal piezoelectric substrate.
Claim 6
Dependent Claim
31 words
A surface acoustic wave device according to claim 1, wherein the electromechanical coupling factor of said single crystal piezoelectric thin plate is greater than that of said single crystal piezoelectric substrate.
Claim 7
Dependent Claim
43 words
A surface acoustic wave device according to claim 1, wherein each of said single crystal piezoelectric substrate and said single crystal piezoelectric thin plate is made of a material selected from the group consisting of lithium niobate, lithium tantalate, lithium borate, and quartz.
Claim 8
Dependent Claim
31 words
A surface acoustic wave device according to claim 6, wherein said single crystal piezoelectric thin plate is made of lithium niobate, and said single crystal piezoelectric substrate is made of quartz.
Claim 9
Dependent Claim
34 words
A surface acoustic wave device according to claim 1, wherein the thickness of said single crystal piezoelectric thin plate is less than three times of the wavelength of said surface acoustic wave excited therein.
Claim 10
Dependent Claim
117 words
A surface acoustic wave device comprising: a single crystal piezoelectric substrate; a single crystal piezoelectric thin plate; an inorganic thin film layer formed between said single crystal piezoelectric substrate and said single crystal piezoelectric thin plate, at least one of said single crystal piezoelectric substrate and said single crystal piezoelectric thin plate being bonded to said inorganic thin film layer through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers being in contact with one of said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate, said interdigital transducers exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 11
Dependent Claim
117 words
A surface acoustic wave device comprising: a single crystal piezoelectric substrate; a single crystal piezoelectric thin plate; an inorganic thin film layer formed between said single crystal piezoelectric substrate and said single crystal piezoelectric thin plate, at least one of said single crystal piezoelectric substrate and said single crystal piezoelectric thin plate being bonded to said inorganic thin film layer through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers being in contact with one of said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate, said interdigital transducers exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 12
Dependent Claim
32 words
A surface acoustic wave device according to claim 9, wherein said inorganic thin film layer has a thickness equal to or less than half of the wavelength of said surface acoustic wave.
Claim 13
Dependent Claim
21 words
A surface acoustic wave device according to claim 9, wherein said inorganic thin film layer is made of materials including silicon.
Claim 14
Dependent Claim
36 words
A surface acoustic wave device according to claim 9, wherein said interdigital transducers are formed between said inorganic thin film layer and one of said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate.
Claim 15
Dependent Claim
32 words
A surface acoustic wave device according to claim 9, further comprising a ground electrode being in contact with one of said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate.
Claim 16
Dependent Claim
24 words
A surface acoustic wave device according to claim 11, wherein said-inorganic thin film layer is made of one of silicon oxide and silicon nitride.
Claim 17
Dependent Claim
30 words
A surface acoustic wave device according to claim 9, wherein the sound velocity of said single crystal piezoelectric thin plate is different from that of said single crystal piezoelectric substrate.
Claim 18
Dependent Claim
34 words
A surface acoustic wave device according to claim 15, wherein the temperature dependence of said sound velocity of said single crystal piezoelectric thin plate is greater than that of said single crystal piezoelectric substrate.
Claim 19
Dependent Claim
31 words
A surface acoustic wave device according to claim 15, wherein the electromechanical coupling factor of said single crystal piezoelectric thin plate is greater than that of said single crystal piezoelectric substrate.
Claim 20
Dependent Claim
43 words
A surface acoustic wave device according to claim 9, wherein each of said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate is made of a material selected from the group consisting of lithium niobate, lithium tantalate, lithium borate, and quartz.
Claim 21
Dependent Claim
31 words
A surface acoustic wave device according to claim 18, wherein said single crystal piezoelectric thin plate is made of lithium niobate, and said single crystal piezoelectric substrate is made of quartz.
Claim 22
Dependent Claim
34 words
A surface acoustic wave device according to claim 9, wherein said single crystal piezoelectric thin plate has a thickness equal to or less than three times of the wavelength of said surface acoustic wave.
Claim 23
Dependent Claim
93 words
A surface acoustic wave device according to claim 9, wherein a surface of said inorganic thin film layer and at least one of a surface of said single crystal piezoelectric thin plate and a surface of said single crystal piezoelectric substrate are subjected to flattening, mirror-polishing, cleaning, and hydrophilic processes and said single crystal piezoelectric thin plate, said single crystal piezoelectric substrate, and said inorganic thin film layer constitute a laminated structure by stacking said single crystal piezoelectric thin plate and said single crystal piezoelectric substrate and then by conducting a heat treatment.
Claim 24
Dependent Claim
75 words
A surface acoustic wave device comprising: a non-piezoelectric substrate; a single crystal piezoelectric thin plate formed on said non-piezoelectric, said single crystal piezoelectric thin plate being bonded to said non-piezoelectric through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers formed on said single crystal piezoelectric thin plate, for exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 25
Dependent Claim
75 words
A surface acoustic wave device comprising: a non-piezoelectric substrate; a single crystal piezoelectric thin plate formed on said non-piezoelectric, said single crystal piezoelectric thin plate being bonded to said non-piezoelectric through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers formed on said single crystal piezoelectric thin plate, for exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 26
Dependent Claim
26 words
A surface acoustic wave device according to claim 22, wherein said single crystal piezoelectric thin plate has a lower sound velocity than that of said non-piezoelectric.
Claim 27
Dependent Claim
26 words
A surface acoustic wave device according to claim 22, wherein said single crystal piezoelectric thin plate has a higher sound velocity than that of said non-piezoelectric.
Claim 28
Dependent Claim
35 words
A surface acoustic wave device according to claim 22, wherein said single crystal piezoelectric thin plate is made of a material selected from the group consisting of lithium niobate, lithium tantalate, lithium borate, and quartz.
Claim 29
Dependent Claim
28 words
A surface acoustic wave device according to claim 22, wherein said non-piezoelectric is made of a material selected from the group consisting of boron, amorphous carbon, and graphite.
Claim 30
Dependent Claim
33 words
A surface acoustic wave device according to claim 22, wherein said single crystal piezoelectric thin plate has a thickness equal to or less than the wavelength of said surface acoustic wave excited therein.
Claim 31
Dependent Claim
27 words
A surface acoustic wave device according to claim 22, wherein said single crystal piezoelectric thin plate has a greater thermal expansion coefficient than that of said non-piezoelectric.
Claim 32
Dependent Claim
63 words
A surface acoustic wave device according to claim 22, wherein surfaces of said single crystal piezoelectric thin plate and said non-piezoelectric are subjected to flattening, mirror-polishing, cleaning, and hydrophilic processes and said single crystal piezoelectric thin plate and said non-piezoelectric constitute a laminated structure by stacking said single crystal piezoelectric thin plate and said insulating substrate and then by conducting a heat treatment.
Claim 33
Dependent Claim
106 words
A surface acoustic wave device comprising: a non-piezoelectric substrate; a single crystal piezoelectric thin plate; an inorganic thin film layer formed between said non-piezoelectric and said single crystal piezoelectric thin plate, at least one of said non-piezoelectric and said single crystal piezoelectric thin plate being bonded to said inorganic thin film layer through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers being in contact with one of said single crystal piezoelectric thin plate and said non-piezoelectric, said interdigital transducers exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 34
Dependent Claim
106 words
A surface acoustic wave device comprising: a non-piezoelectric substrate; a single crystal piezoelectric thin plate; an inorganic thin film layer formed between said non-piezoelectric and said single crystal piezoelectric thin plate, at least one of said non-piezoelectric and said single crystal piezoelectric thin plate being bonded to said inorganic thin film layer through at least one of covalent bonding with oxygen atoms and hydrogen bonding with hydroxyl groups by direct bonding; and interdigital transducers being in contact with one of said single crystal piezoelectric thin plate and said non-piezoelectric, said interdigital transducers exciting a surface acoustic wave in at least said single crystal piezoelectric thin plate.
Claim 35
Dependent Claim
32 words
A surface acoustic wave device according to claim 30, wherein said inorganic thin film layer has a thickness equal to or less than half of the wavelength of said surface acoustic wave.
Claim 36
Dependent Claim
21 words
A surface acoustic wave device according to claim 30, wherein said inorganic thin film layer is made of materials including silicon.
Claim 37
Dependent Claim
33 words
A surface acoustic wave device according to claim 30, wherein said interdigital transducers are formed between said inorganic thin film layer and one of said single crystal piezoelectric thin plate and said non-piezoelectric.
Claim 38
Dependent Claim
29 words
A surface acoustic wave device according to claim 30, further comprising a ground electrode being in contact with one of said single crystal piezoelectric thin plate and said non-piezoelectric.
Claim 39
Dependent Claim
25 words
A surface acoustic wave device according to claim 30, wherein said inorganic thin film layer is made of one of silicon oxide and silicon nitride.
Claim 40
Dependent Claim
26 words
A surface acoustic wave device according to claim 30, wherein said single crystal piezoelectric thin plate has a lower sound velocity than that of said non-piezoelectric.
Claim 41
Dependent Claim
26 words
A surface acoustic wave device according to claim 30, wherein said single crystal piezoelectric thin plate has a higher sound velocity than that of said non-piezoelectric.
Claim 42
Dependent Claim
35 words
A surface acoustic wave device according to claim 30, wherein said single crystal piezoelectric thin plate is made of a material selected from the group consisting of lithium niobate, lithium tantalate, lithium borate, and quartz.
Claim 43
Dependent Claim
28 words
A surface acoustic wave device according to claim 30, wherein said non-piezoelectric is made of a material selected from the group consisting of boron, amorphous carbon, and graphite.
Claim 44
Dependent Claim
33 words
A surface acoustic wave device according to claim 30, wherein said single crystal piezoelectric thin plate has a thickness equal to or less than the wavelength of said surface acoustic wave excited therein.
Claim 45
Dependent Claim
27 words
A surface acoustic wave device according to claim 30, wherein said single crystal piezoelectric thin plate has a greater thermal expansion coefficient than that of said non-piezoelectric.
Claim 46
Dependent Claim
84 words
A surface acoustic wave device according to claim 30, wherein a surface of said inorganic thin film layer and at least one of a surface of said single crystal piezoelectric thin plate and a surface of said non-piezoelectric are subjected to flattening, mirror-polishing, cleaning, and hydrophilic processes and said single crystal piezoelectric thin plate, said non-piezoelectric, and said inorganic thin film layer constitute a laminated structure by stacking said single crystal piezoelectric thin plate and said non-piezoelectric and then by conducting a heat treatment.
References Cited (Backward Citations)
US4037176A
Cited
US4128819A
Cited
JPS5627985A
Cited
JPS56149109A
Cited
GB2110033A
Cited
US4516049A
Cited
JPS6192021A
Cited
EP0313025A2
Cited
US5329208A
Cited
US5373579A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-28 | 1999-02-27 | 1999-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-28 | 2003-02-27 | 2003-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-28 | 2007-02-27 | 2007-08-29 | $7700.00 | Window Closed / Lapsed |