US5446284A
Expired / Lapsed
US
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Monolithic detector array apparatus
Assignee: Lockheed Martin Corp
•
Filing: 1994-01-25
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Granted: 1995-08-29
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Expires: 2014-01-25
Abstract
Abstract A monolithic detector array apparatus for sensing infrared radiation. An array of semiconductor diode bolometers are fabricated on micromachined thermal isolation structures called microbridges. The detectors are configured in an array and addressed by row and column. Readout circuitry may be optionally incorporated onto a common substrate. The monolithic detector array may be highly integrated, resulting in a low cost and a high performance focal plane array.
Inventors
- 👤 Neal R. Butler
- 👤 Shigesato Iwasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:02
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/147; G; G01; G01J; G01J5/00; G01J5/10; G01J5/20; H10N; H10N19/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
50 words
An electromagnetic radiation detector comprising: (a) a substrate having a top surface and a bottom surface; and (b) a microbridge suspended over the top surface, the microbridge including a diode means for detecting electromagnetic radiation wherein a space is formed below the microbridge by etching a pit beneath the microbridge.
Claim 2
Dependent Claim
50 words
An electromagnetic radiation detector comprising: (a) a substrate having a top surface and a bottom surface; and (b) a microbridge suspended over the top surface, the microbridge including a diode means for detecting electromagnetic radiation wherein a space is formed below the microbridge by etching a pit beneath the microbridge.
Claim 3
Dependent Claim
22 words
The apparatus of claim 1 wherein the substrate comprises a material selected from the group consisting of silicon, gallium arsenide and germanium.
Claim 4
Dependent Claim
18 words
The apparatus of claim 1 wherein the substrate is separated from the microbridge by at least two micrometers.
Claim 5
Dependent Claim
14 words
The apparatus of claim 1 wherein the diode means is about 0.5 micrometers thick.
Claim 6
Dependent Claim
14 words
The apparatus of claim 1 wherein the diode means further comprises a micromachined diode.
Claim 7
Dependent Claim
12 words
The apparatus of claim 1 wherein the microbridge comprises a polysilicon microbridge.
Claim 8
Dependent Claim
13 words
The apparatus of claim 1 wherein the diode means comprises a polysilicon diode.
Claim 9
Dependent Claim
12 words
The apparatus of claim 1 wherein the substrate comprises a silicon substrate.
Claim 10
Dependent Claim
59 words
A monolithic detector focal plane array for detecting infrared radiation comprising: (a) a silicon substrate having a top surface and a bottom surface; and (b) a plurality of polysilicon microbridges where each polysilicon microbridge is positioned at one end in contact with the silicon substrate and at another end suspended freely above the silicon substrate forming a polysilicon diode.
Claim 11
Dependent Claim
59 words
A monolithic detector focal plane array for detecting infrared radiation comprising: (a) a silicon substrate having a top surface and a bottom surface; and (b) a plurality of polysilicon microbridges where each polysilicon microbridge is positioned at one end in contact with the silicon substrate and at another end suspended freely above the silicon substrate forming a polysilicon diode.
Claim 12
Dependent Claim
22 words
The apparatus of claim 9 wherein the silicon substrate is separated from the plurality of polysilicon microbridges by at least two micrometers.
Claim 13
Dependent Claim
15 words
The apparatus of claim 9 wherein the polysilicon diode is less than 1 millimeter thick.
Claim 14
Dependent Claim
20 words
The apparatus of claim 9 wherein the polysilicon diode is micromachined above the silicon substrate top surface and thermally isolated.
Claim 15
Dependent Claim
22 words
The apparatus of claim 9 wherein a space is formed below the polysilicon diode by etching a pit beneath the polysilicon microbridges.
Claim 16
Dependent Claim
14 words
The apparatus of claim 10 wherein the polysilicon diode further comprises a micromachined diode.
Claim 17
Dependent Claim
24 words
The apparatus of claim 9 wherein each of the plurality of polysilicon diodes may be accessed individually along either a row or a column.
Claim 18
Dependent Claim
25 words
The apparatus of claim 9 wherein each of the plurality of polysilicon diodes may be accessed in groups along either a row or a column.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-28 | 1999-02-27 | 1999-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-28 | 2003-02-27 | 2003-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-28 | 2007-02-27 | 2007-08-29 | $7700.00 | Window Closed / Lapsed |