Infrared detecting element

Abstract

Abstract PURPOSE:To obtain an element which can be formed at a low temp. and has high sensitivity to IR rays by forming a thin film of Pb5Ge2SiO11 as a pyroelectric material and providing electrodes on a face perpendicular to the polarization direction of the thin film. CONSTITUTION:An Si wafer is used as a thin film substrate 1 and the lower electrode 2 consisting of a thin platinum film is formed by high-frequency sputtering. The thin film 3 is then formed by high-frequency sputtering using Pb5Ge2SiO11 powder as a target. The upper electrode 4 is further formed on the thin film 3 by vapor deposition of a nichrome electrode. After the thin film 3 is subjected to a polarization treatment, the substrate in a photodetecting part is removed by etching to form an aperture 5, by which the IR detecting element is obtd. The element formed in such a manner has the high sensitivity to the detection of the IR rays projected from the polarization direction and the Curie temp. thereof exhibits a high value. The formation of the element at the low temp. is thereby enabled and the element capable of detecting IR rays with the high sensitivity is obtd.

Inventors

• 👤 Kenji Iijima

Bibliographic Details