US5445993A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser diode and method for manufacturing the same
Assignee: LG Electronics Inc
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Filing: 1993-05-27
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Granted: 1995-08-29
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Expires: 2013-05-27
Abstract
Abstract A semiconductor laser diode includes a semiconductor substrate, an active layer having a double hetero structure formed on the semiconductor substrate, a first quantum well layer formed between the active layer and the current confinement layer, a second quantum well layer formed on the active layer corresponding to the current injection groove, and a clad layer having its flat surface formed on the current injection groove and the current confinement layer. A method for manufacturing the semiconductor laser diode includes the steps of forming an active layer having a double hetero structure on the semiconductor substrate, selectively forming a current confinement layer on the active layer to form a current injection groove, forming a clad layer having its flat surface on the current injection groove and the current confinement layer.
Inventors
- 👤 Hyung S. Ahn
- 👤 Min S. No
- 👤 Sang K. Si
- 👤 Won T. Choi
- 👤 Joo O. Seo
- 👤 Jin H. Lim
- 👤 Min Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:00
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2205; H01S5/2206; H01S5/2207; H01S5/30; H01S5/32; H01S5/3211; H01S5/3216
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
123 words
A method for manufacturing a semiconductor laser diode, comprising the steps of: a) growing a double hereto structure on a substrate, said double hetero structure including a first clad layer, an active, and a second clad layer; b) growing a quantum well layer on said double hereto structure; c) selectively growing a current confinement layer to form a current injection groove on said quantum well layer; d) growing a third clad layer on said current confinement layer and an exposed surface of said quantum well layer by LPE, thereby melting back said quantum well layer into said third clad layer; e) growing a cap layer on said third clad layer; and f) forming electrodes both side on said cap layer and said substrate.
Claim 2
Independent Claim
123 words
A method for manufacturing a semiconductor laser diode, comprising the steps of: a) growing a double hereto structure on a substrate, said double hetero structure including a first clad layer, an active, and a second clad layer; b) growing a quantum well layer on said double hereto structure; c) selectively growing a current confinement layer to form a current injection groove on said quantum well layer; d) growing a third clad layer on said current confinement layer and an exposed surface of said quantum well layer by LPE, thereby melting back said quantum well layer into said third clad layer; e) growing a cap layer on said third clad layer; and f) forming electrodes both side on said cap layer and said substrate.
Claim 3
Dependent Claim
33 words
A method for manufacturing a semiconductor laser diode in accordance with claim 1, wherein said quantum well layer includes an undoped-GaAs layer having a thickness within a range of 30 to 100 Å.
Claim 4
Dependent Claim
121 words
A method for manufacturing a semiconductor laser diode in accordance with claim 1, wherein said step of selectively growing a current confinement layer comprises the steps of: a) growing an interface protection layer on said quantum well layer; b) depositing an insulating layer on said interface protection layer; c) patterning said insulating layer to form a striped insulation layer by a first photoetching process; d) patterning said interface protection layer to form a same pattern as said striped insulating layer by a second photoetching process; e) selectively growing said current confinement layer on said quantum well layer using said striped insulation layer and interface protection layer as a mask; and f) removing said striped insulation layer and said interface protection layer.
Claim 5
Dependent Claim
32 words
A method for manufacturing a semiconductor laser diode in accordance with claim 3, wherein said interface protection layer is made of AlxGa 1-x As (x>0.6) and has a thickness over 1000 Å.
Claim 6
Dependent Claim
30 words
A method for manufacturing a semiconductor laser diode in accordance with claim 3, wherein the insulation film is made of one of Si 3 N 4 and SiO 2 .
Claim 7
Dependent Claim
24 words
A method for manufacturing a semiconductor laser diode in accordance with claim 3, wherein a width of the striped insulation layer is 3˜7 μm.
Claim 8
Dependent Claim
24 words
A method for manufacturing a semiconductor laser diode in accordance with claim 3, wherein the current confinement layer is grown using an MOCVD method.
Claim 9
Dependent Claim
86 words
A method for manufacturing a semiconductor laser diode in accordance with claim 1, wherein said step of selectively growing said current confinement layer comprises the steps of: a) oxidizing said quantum well layer to form an oxidation quantum well layer; b) patterning said oxidation quantum well layer to form a striped oxidation quantum well layer; c) selectively growing said current confinement layer using said striped oxidation quantum well layer as a mask on said double hereto structure; and d) removing the striped oxidation quantum well layer.
Claim 10
Dependent Claim
32 words
A method for manufacturing a semiconductor laser diode in accordance with claim 8, wherein the striped insulation layer is formed along a crystal direction <011> or <011> of said quantum well layer.
Claim 11
Dependent Claim
33 words
A method for manufacturing a semiconductor laser diode in accordance with claim 8, wherein the pattern of the photo-resist is formed along a crystal direction <011> or <011> of the quantum well layer.
Claim 12
Dependent Claim
30 words
A method for manufacturing a semiconductor laser diode in accordance with claim 8, wherein the patterned oxidation quantum well layer has a width approximately in the range of 3-7 μm.
Claim 13
Dependent Claim
85 words
A method for manufacturing a semiconductor laser diode in accordance with claim 1, wherein said step of selectively growing said current confinement layer comprises the steps of: depositing an insulation layer having a double structure on said quantum well layer; patterning said insulation layer to form a striped insulation layer by a photoetching process; selectively growing said current confinement layer on said quantum well layer using said striped insulation layer as a mask to form a current injection groove; and removing the striped insulation layer.
Claim 14
Dependent Claim
38 words
A method for manufacturing a semiconductor laser diode in accordance with claim 12, wherein the step of patterning the oxidation quantum well layer forms a pattern along a crystal direction <011> or <011> of said second clad layer.
Claim 15
Dependent Claim
38 words
A method for manufacturing a semiconductor laser diode in accordance with claim 12, wherein the step of patterning the oxidation quantum well layer forms a pattern along a crystal direction <011> or <011> of said second clad layer.
Claim 16
Dependent Claim
34 words
A method for manufacturing a semiconductor laser diode in accordance with claim 12, wherein the insulation film having the double structure is made of one of PSG/SiO 2 and PSG/Si 3 N 4 .
Claim 17
Dependent Claim
40 words
A method for manufacturing a semiconductor laser diode in accordance with claim 12, wherein the step of patterning the insulation film having the double structure forms a pattern along a crystal direction <011> or <011> of the quantum well layer.
Claim 18
Dependent Claim
40 words
A method for manufacturing a semiconductor laser diode in accordance with claim 12, wherein the step of patterning the insulation film having the double structure forms a pattern along a crystal direction <011> or <011> of the quantum well layer.
Claim 19
Dependent Claim
32 words
A method for manufacturing a semiconductor laser diode in accordance with claim 12, wherein the patterned insulation film having the double structure has a width approximately in the range of 3-7 μm.
Claim 20
Dependent Claim
25 words
A method for manufacturing a semiconductor laser diode in accordance with claim 1, further comprising a step of growing a buffer layer on said substrate.
Claim 21
Dependent Claim
26 words
A method for manufacturing a semiconductor laser diode in accordance with claim 1, wherein said third clad layer is the same as said second clad layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-28 | 1999-02-27 | 1999-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-28 | 2003-02-27 | 2003-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-28 | 2007-02-27 | 2007-08-29 | $7700.00 | Window Closed / Lapsed |