EP0132081A2
Expired / Lapsed
EP
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Semiconductor laser device
Assignee: Toshiba Corp
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Filing: 1984-07-03
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Granted: —
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Expires: 2004-07-03
Abstract
Abstract A double heterojunction structure type semiconductor laser devie comprising an active layer of GaAlAs in which the laser is excited, n-Ga 0.45 Al 0.55 As clad and a p-Ga 0.45 Al 0.55 As layer sandwiching the active layer between then in order to confine the laser in the active layer, an n-GaAs current blocking layer disposed between the active layer, an n-GaAs current blocking layer disposed between the active layer and the p-Ga 0.45 Al 0.55 As clad layer in order to confine current, and a p-Ga 0.63 Al 0.37 As optical waveguide layer disposed between the active layer and the current confinement layer. The refractive index of the optical waveguide layer is greater than that of both the clad layers.
Inventors
- 👤 Nawoto C/O Patent Divison Motegi
- 👤 Masaki C/O Patent Divison Okajima
- 👤 Yuhei C/O Patent Divison Muto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 02:38
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
185 words
A semiconductor laser device having a double heterojunction structure made of compound semiconuuctor materials, comprising: a substrate (11) of a first conductivity type; a first clad layer (12) formed on said substrate, said first clad layer being of said first conductivity type; an active layer (13) formed on said first clad layer; an optical waveguide layer (14) formed on said active layer, said optical waveguide layer being of a second conductivity type; a current confinement layer (15) formed on said optical waveguide layer and defining a groove (18) extending to the optical waveguide layer in the direction perpendicular to the surface of said current confinement layer, said current confinement layer being of said first conductivity type; a second clad layer (16) formed on said current confinement layer and in said groove, said second clad layer being of said second conductivity type; and a pair of contact means (20, 17, 19), connected to said substrate and said second clad luyer, respectively, and wherein said optical waveguide layer (14) has a refractive index greater than the refractive index of said first (12) and second (16) clad layers.
Claim 2
Dependent Claim
185 words
A semiconductor laser device having a double heterojunction structure made of compound semiconuuctor materials, comprising: a substrate (11) of a first conductivity type; a first clad layer (12) formed on said substrate, said first clad layer being of said first conductivity type; an active layer (13) formed on said first clad layer; an optical waveguide layer (14) formed on said active layer, said optical waveguide layer being of a second conductivity type; a current confinement layer (15) formed on said optical waveguide layer and defining a groove (18) extending to the optical waveguide layer in the direction perpendicular to the surface of said current confinement layer, said current confinement layer being of said first conductivity type; a second clad layer (16) formed on said current confinement layer and in said groove, said second clad layer being of said second conductivity type; and a pair of contact means (20, 17, 19), connected to said substrate and said second clad luyer, respectively, and wherein said optical waveguide layer (14) has a refractive index greater than the refractive index of said first (12) and second (16) clad layers.
Claim 3
Dependent Claim
40 words
A semiconductor laser device according to claim 1, wherein said optical waveguide layer has a sufficient thickness so as to maintain the density of the impurities in the optical waveguide layer at least 2 x 10 18 cm -3 .
Claim 4
Dependent Claim
24 words
A semiconductor laser device according to claim 1 or 2, wherein said first conductivity type is n-type and said second conductivity type is p-type.
Claim 5
Dependent Claim
24 words
A semiconductor laser device according to claim 1, 2, or 3, wherein the thickness of said optical waveguide layer us greater than 0.6 micron.
Claim 6
Dependent Claim
36 words
A semiconductor laser device according to claim 1, wherein said first and second clad layers are made of Ga 0.45 Al 0.55 As and said optical waveguide layer is made of Ga 0.63 Al 0.37 As.
References Cited (Backward Citations)
No citation records indexed.
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