US5445847A
Expired / Lapsed
US
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Method for preparing chalcopyrite-type compound
Assignee: Panasonic Holdings Corp
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Filing: 1994-05-27
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Granted: 1995-08-29
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Expires: 2014-05-27
Abstract
Abstract A chalcopyrite-type compound, for instance, CuInS 2 or CuGaS 2 , is prepared by subjecting a Group I-III oxide composition, containing at least one of the Group Ib element, for instance copper (Cu), and at least one of the Group IIIb element, for instance indium (In) or gallium (Ga) to a heat treatment under a reducing atmosphere containing the Group VIb element, for instance sulfur (S) or selenium (Se), or under an atmosphere containing a reducing compound of the Group VIb element, thereby converting said oxide composition into a chalcopyrite-type compound.
Inventors
- 👤 Takahiro Wada
- 👤 Mikihiko Nishitani
- 👤 Takayuki Negami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3436; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10P14/203; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y10; Y10S; Y10S438/00; Y10S438/93
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
81 words
A method for preparing a Group I/III/VI chalcopyrite compound, which comprises: treating a Group I/III oxide composition, containing at least one of the Group Ib element and at least one of the Group IIIb element, with heat under a reducing atmosphere containing at least one gaseous compound of the Group VIb element or under an atmosphere containing a gaseous reducing compound of at least one of the Group VIb element, thereby converting said oxide composition into a Group I/III/VI chalcopyrite compound.
Claim 2
Independent Claim
81 words
A method for preparing a Group I/III/VI chalcopyrite compound, which comprises: treating a Group I/III oxide composition, containing at least one of the Group Ib element and at least one of the Group IIIb element, with heat under a reducing atmosphere containing at least one gaseous compound of the Group VIb element or under an atmosphere containing a gaseous reducing compound of at least one of the Group VIb element, thereby converting said oxide composition into a Group I/III/VI chalcopyrite compound.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein said oxide composition is a complex oxide of at least one of the Group Ib element and at least one of the Group IIIb element.
Claim 4
Dependent Claim
37 words
The method according to claim 1, wherein said oxide composition is a mixture of at least one of the oxide of the Group Ib element with at least one of the oxide of the Group IIIb element.
Claim 5
Dependent Claim
17 words
The method according to claim 2, wherein said complex oxide is a film deposited on a substrate.
Claim 6
Dependent Claim
24 words
The method according to claim 4, wherein said film is obtained by printing a paste containing powder of said complex oxide on said substrate.
Claim 7
Dependent Claim
40 words
The method according to claim 5, wherein said complex oxide is obtained by sintering a mixture comprising at least one of the oxide of the Group Ib element and at least one of the oxide of the Group IIIb element.
Claim 8
Dependent Claim
17 words
The method according to claim 4, wherein said film is deposited by a physical vapor deposition method.
Claim 9
Dependent Claim
17 words
The method according to claim 3, wherein said oxide composition is a film deposited on a substrate.
Claim 10
Dependent Claim
25 words
The method according to claim 8, wherein said film is obtained by printing a paste containing powder of said oxide composition mixtures on said substrate.
Claim 11
Independent Claim
38 words
The method according to any of claims 1, 2, 3, 5 or 9, wherein said Group Ib element is Cu, and said Group IIIb element is at least one selected from the group consisting of In and Ga.
Claim 12
Independent Claim
41 words
The method according to any of claims 1, 2, 3, 5 or 9, wherein said reducing compound of the Group VIb element is at least one selected from the group consisting of H 2 S, CS 2 and H 2 Se.
Claim 13
Dependent Claim
28 words
The method according to claim 4 or 8, further comprising, a step of eliminating an oxygen-containing compound by-product in said I/III/VI chalcopyrite compound, performed after said conversion step.
Claim 14
Dependent Claim
28 words
The method according to claim 12, wherein said step of eliminating the by-product oxygen-containing compound is a heat treatment under a drying atmosphere at 80° C. or above.
Claim 15
Dependent Claim
40 words
The method according to claim 4 or 8, wherein a molar ratio of the Group Ib element to the Group IIIb element in said film is greater at the substrate side, and than at the surface side of the film.
Claim 16
Dependent Claim
19 words
The method according to claim 1, wherein said treating with heat is performed at a temperature of 250°-700° C.
Claim 17
Dependent Claim
19 words
The method according to claim 1, wherein said treating with heat is performed at a temperature of 400°-600° C.
Claim 18
Dependent Claim
12 words
The method according to claim 1, wherein said oxide composition is amorphous.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-28 | 1999-02-27 | 1999-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-28 | 2003-02-27 | 2003-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-28 | 2007-02-27 | 2007-08-29 | $7700.00 | Window Closed / Lapsed |