US5028274A
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Group I-III-VI2 semiconductor films for solar cell application
Assignee: International Solar Electric Technology Inc
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Filing: 1989-06-07
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Granted: 1991-07-02
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Expires: 2009-06-07
Abstract
Abstract This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI2 semiconductor layer.
Inventors
- 👤 Bulent M. Basol
- 👤 Vijay K. Kapur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:52
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y10; Y10S; Y10S438/00; Y10S438/93
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
68 words
A method of forming a solar cell comprising: depositing onto a substrate an intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb; depositing a Group I-III-VI 2 semiconductor layer onto said intermediate layer, wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon.
Claim 2
Independent Claim
68 words
A method of forming a solar cell comprising: depositing onto a substrate an intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb; depositing a Group I-III-VI 2 semiconductor layer onto said intermediate layer, wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon.
Claim 3
Dependent Claim
15 words
The method set forth in claim 1 wherein said intermediate layer consists essentially of Te.
Claim 4
Dependent Claim
21 words
The method set forth in claim 1 wherein a transparent window layer is deposited onto said Group I-III-VI 2 semiconductor layer.
Claim 5
Dependent Claim
34 words
The method set forth in claim 1 wherein said Group I-III-VI 2 semiconductor is selected from the group consisting of selenides, sulfides, and tellurides of Cu, Ag, Al, Ga, In, Tl, and their alloys.
Claim 6
Dependent Claim
29 words
The method set forth in claim 1 wherein said Group I-III-VI 2 semiconductor is CuIn 1-x Ga x Se 2 , wherein x may vary from 0 to 1.
Claim 7
Independent Claim
139 words
A method of forming a solar cell comprising: depositing onto a substrate an intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb; depositing a Group I-III-VI 2 semiconductor layer onto said intermediate layer, said Group I-III-VI 2 semiconductor layer containing elemental components selected from the group consisting of Cuy, Ag, Al, Ga, In, Tl, S, Te and Se, wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon, and wherein at least two of said elemental components of the Group I-III-VI 2 semiconductor are deposited onto the intermediate layer, and wherein the substrate and all the layers deposited thereon are annealed at a temperature range of from about 350° C. to about 600° C.
Claim 8
Independent Claim
139 words
A method of forming a solar cell comprising: depositing onto a substrate an intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb; depositing a Group I-III-VI 2 semiconductor layer onto said intermediate layer, said Group I-III-VI 2 semiconductor layer containing elemental components selected from the group consisting of Cuy, Ag, Al, Ga, In, Tl, S, Te and Se, wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon, and wherein at least two of said elemental components of the Group I-III-VI 2 semiconductor are deposited onto the intermediate layer, and wherein the substrate and all the layers deposited thereon are annealed at a temperature range of from about 350° C. to about 600° C.
Claim 9
Dependent Claim
15 words
The method set forth in claim 6 wherein said intermediate layer consists essentially of Te.
Claim 10
Dependent Claim
56 words
The method as set forth in claim 7 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are selected from the group consisting of Cu, Ag, Al, Ga, In, and Tl, and wherein said annealing is carried out in an atmosphere comprising Se or H 2 Se and/or S or H 2 S vapors.
Claim 11
Dependent Claim
71 words
The method as set forth in claim 6 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are selected from the group, consisting of Cu, Ag, Al, Ga, In, and Tl and wherein said elemental components are deposited onto said intermediate layer as separate discrete layers, and wherein said annealing is carried out in an atmosphere comprising Se or H 2 Se and/or S or H 2 S vapors.
Claim 12
Dependent Claim
40 words
The method as set forth in claim 6 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are Cu, Ga, and In, and said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 13
Dependent Claim
39 words
The method as set forth in claim 6 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are Cu and In, and said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 14
Dependent Claim
50 words
The method as set forth in claim 6 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are deposited onto said intermediate layer in the sequence of In, Cu, and Ga and wherein said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 15
Dependent Claim
49 words
The method as set forth in claim 6 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are deposited on said intermediate layer in the sequence of In and Cu, and wherein said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 16
Dependent Claim
21 words
The method set forth in claim 6 wherein a transparent window layer is deposited onto said Group I-III-VI 2 semiconductor layer.
Claim 17
Dependent Claim
59 words
A solar cell comprising: a substrate; an intermediate layer deposited onto said substrate, said intermediate layer consisting essentially of Te, Sn, and Pb; a Group I-III-VI 2 semiconductor layer deposited onto said intermediate layer, wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon.
Claim 18
Dependent Claim
59 words
A solar cell comprising: a substrate; an intermediate layer deposited onto said substrate, said intermediate layer consisting essentially of Te, Sn, and Pb; a Group I-III-VI 2 semiconductor layer deposited onto said intermediate layer, wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon.
Claim 19
Dependent Claim
17 words
A solar cell as set forth in claim 17 wherein said intermediate layer consists essentially of Te.
Claim 20
Dependent Claim
21 words
A solar cell set forth in claim 15 wherein a window layer is deposited onto said Group I-III-VI 2 semiconductor layer.
Claim 21
Dependent Claim
35 words
A solar cell set forth in claim 15 wherein said Group I-III-VI 2 semiconductor is selected from the group consisting of selenides, sulfides, and tellurides of Cu, Ag, Al, Ga, In, Tl, and their alloys.
Claim 22
Dependent Claim
30 words
A solar cell set forth in claim 15 wherein said Group I-III-VI 2 semiconductor is CuIn 1-x Ga x Se 2 , wherein x may vary from 0 to 1.
Claim 23
Dependent Claim
140 words
A solar cell comprising a substrate; an intermediate layer deposited onto said substrate, said intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb; a Group I-III-VI 2 semiconductor layer deposited onto said intermediate layer, said Group I-III-VI 2 semiconductor layer containing elemental components selected from the group consisting of Cu, Ag, Al, Ga, In, Tl, S, Te, and Se. wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon and wherein at least two of said elemental components of the Group I-III-VI 2 semiconductor are deposited onto the intermediate layer, and wherein the substrate and all the layers deposited thereon are annealed at a temperature range of from about 350° C. to about 600° C.
Claim 24
Dependent Claim
140 words
A solar cell comprising a substrate; an intermediate layer deposited onto said substrate, said intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb; a Group I-III-VI 2 semiconductor layer deposited onto said intermediate layer, said Group I-III-VI 2 semiconductor layer containing elemental components selected from the group consisting of Cu, Ag, Al, Ga, In, Tl, S, Te, and Se. wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon and wherein at least two of said elemental components of the Group I-III-VI 2 semiconductor are deposited onto the intermediate layer, and wherein the substrate and all the layers deposited thereon are annealed at a temperature range of from about 350° C. to about 600° C.
Claim 25
Dependent Claim
16 words
A solar cell set forth in claim 20 wherein said intermediate layer consists essentially of Te.
Claim 26
Dependent Claim
57 words
A solar cell as set forth in claim 20 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are selected from the group consisting of Cu, Ag, Al, Ga, In, and Tl, and wherein said annealing is carried out in an atmosphere comprising Se or H 2 Se and/or S or H 2 S vapors.
Claim 27
Dependent Claim
72 words
A solar cell as set forth in claim 20 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are selected from the group consisting of Cu, Ag, Al, Ga, In, and Tl, and wherein said elemental components are deposited onto said intermediate layer as separate discrete layers, and wherein said annealing is carried out in an atmosphere comprising Se or H 2 Se and/or S or H 2 S vapors.
Claim 28
Dependent Claim
41 words
A solar cell as set forth in claim 20 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are Cu, Ga, and In, and said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 29
Dependent Claim
40 words
A solar cell as set forth in claim 20 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are Cu and In, and said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 30
Dependent Claim
51 words
A solar cell as set forth in claim 20 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are deposited onto said intermediate layer in the sequence of In, Cu, and Ga, and wherein said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 31
Dependent Claim
50 words
A solar cell as set forth in claim 20 wherein said elemental components of said Group I-III-VI 2 semiconductor layer are deposited on said intermediate layer in the sequence of In and Cu, and wherein said annealing is carried out in an atmosphere comprising Se vapor or H 2 Se.
Claim 32
Dependent Claim
23 words
A solar cell as set forth in claim 20 wherein a transparent window layer is deposited onto said Group I-III-VI 2 semiconductor layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |