Anisotropic etching method and apparatus

Claim 2

An anisotropic etching method using a plasma etching apparatus including a process chamber, a first electrode arranged in said process chamber, said first electrode having a support portion for supporting a substrate to be processed, a second electrode arranged in said process chamber, said second electrode having an opposing portion opposite to said support portion of said first electrode, a power supply for applying an RF voltage across said first and second electrodes, exhausting means for exhausting said process chamber, supplying means for supplying a process gas into said process chamber, said supplying means having a shower region defined by a plurality of holes formed in said opposing portion of said second electrode, and the process gas being supplied onto said substrate supported by said first electrode through the holes, and cooling means for cooling said second electrode having said opposing portion whose temperature gradient is defined such that a temperature at a peripheral portion of said opposing portion is lower than a temperature at a central portion of said opposing portion, said method comprising: selecting a size of said shower region, the size of said shower region being selected to be smaller than a size of said substrate such that degradation of planar uniformity of a degree of etching anisotropy on said substrate caused by the temperature gradient of said opposing portion is compensated for; setting said apparatus on the basis of the selected size of said shower region, said shower region being arranged such that the center of said shower region is substantially aligned with the center of said substrate when said substrate is supported by said first electrode; arranging said substrate on said support portion of said first electrode; exhausting said process chamber; supplying the process gas through the holes of said shower region; applying an RF voltage from said power supply across said first and second electrodes to make the process gas into a plasma; and anisotropically etching said substrate using the plasma; wherein a temperature difference between the central and peripheral portions of said opposing portion is set to be 2° to 30° C., and the size of said shower region is smaller than the size of said substrate by 5 to 25%.

Claim 3

A method according to claim 1, wherein said shower region has an outline similar to that of said substrate.

Claim 4

An anisotropically etching method using a plasma etching apparatus including a process chamber, a first electrode arranged in said process chamber, said first electrode having a support portion for supporting a substrate to be processed, a second electrode arranged in said process chamber, said second electrode having an opposing portion opposite to said support portion of said first electrode, a power supply for applying an RF voltage across said first and second electrodes, exhausting means for exhausting said process chamber, supplying means for supplying a process gas into said process chamber, said supplying means having a shower region defined by a plurality of holes formed in said opposing portion of said second electrode, and the process gas being supplied onto said substrate supported by said first electrode through the holes, and cooling means for cooling said second electrode having said opposing portion whose temperature gradient is defined such that a temperature at a peripheral portion of said opposing portion is lower than a temperature at a central portion of said opposing portion, said method comprising: selecting a size of said shower region, the size of said shower region being selected to be smaller than a size of said substrate such that degradation of planar uniformity of a degree of etching anisotropy on said substrate caused by the temperature gradient of said opposing portion is compensated for; selecting a size of said opposing portion, the size of said opposing portion being selected to be larger than a size of said substrate such that a taper angle of a side wall formed by etching is set to be 85° to 90°; setting said apparatus on the basis of the selected sizes of said shower region and said opposing portion, the centers of said shower region and the opposing region being arranged to be substantially aligned with the center of said substrate when said substrate is supported by said first electrode; arranging said substrate on said support portion of said first electrode; exhausting said process chamber; supplying the process gas through the holes of said shower region; applying an RF voltage from said power supply across said first and second electrodes to make the process gas into a plasma; and anisotropically etching said substrate using the plasma; wherein a temperature difference between the central and peripheral portions of said opposing portion is set to be 2° to 30° C., and the size of said shower region is smaller than the size of said substrate by 5 to 25%.

Claim 5

An anisotropically etching method using a plasma etching apparatus including a process chamber, a first electrode arranged in said process chamber, said first electrode having a support portion for supporting a substrate to be processed, a second electrode arranged in said process chamber, said second electrode having an opposing portion opposite to said support portion of said first electrode, a power supply for applying an RF voltage across said first and second electrodes, exhausting means for exhausting said process chamber, supplying means for supplying a process gas into said process chamber, said supplying means having a shower region defined by a plurality of holes formed in said opposing portion of said second electrode, and the process gas being supplied onto said substrate supported by said first electrode through the holes, and cooling means for cooling said second electrode having said opposing portion whose temperature gradient is defined such that a temperature at a peripheral portion of said opposing portion is lower than a temperature at a central portion of said opposing portion, said method comprising: selecting a size of said shower region, the size of said shower region being selected to be smaller than a size of said substrate such that degradation of planar uniformity of a degree of etching anisotropy on said substrate caused by the temperature gradient of said opposing portion is compensated for; selecting a size of said opposing portion, the size of said opposing portion being selected to be larger than a size of said substrate such that a taper angle of a side wall formed by etching is set to be 85° to 90°; setting said apparatus on the basis of the selected sizes of said shower region and said opposing portion, the centers of said shower region and the opposing region being arranged to be substantially aligned with the center of said substrate when said substrate is supported by said first electrode; arranging said substrate on said support portion of said first electrode; exhausting said process chamber; supplying the process gas through the holes of said shower region; applying an RF voltage from said power supply across said first and second electrodes to make the process gas into a plasma; and anisotropically etching said substrate using the plasma; wherein a temperature difference between the central and peripheral portions of said opposing portion is set to be 2° to 30° C., and the size of said shower region is smaller than the size of said substrate by 5 to 25%.

Claim 6

A method according to claim 1, wherein an interval between said first and second electrodes is set to be 8 to 15 mm.

Claim 7

A method according to claim 4, further including the step of setting the interval between said first and second electrodes after said substrate is placed on said support portion of said first electrode.

Claim 8

A method according to claim 4, wherein the process gas contains a fluorocarbon-based gas.

Claim 9

A method according to claim 6, wherein the process gas further contains argon.

Claim 10

A method according to claim 7, wherein said substrate is a semiconductor wafer having a surface on which an oxide film is formed, and the oxide film is etched.

Claim 11

A method according to claim 8, wherein a patterned photoresist is formed on the oxide film, and the oxide film is etched using the photoresist film as a mask to form contact holes.

Claim 12

A method according to claim 8, wherein the semiconductor wafer consists of Si, and the oxide film consists of SiO 2 .

Claim 13

A method according to claim 8, wherein, when the wafer is a 6-inch wafer, said shower region is a substantially circular region having a diameter of 120 to 140 mm.

Claim 14

A method according to claim 8, wherein, when the wafer is an 8-inch wafer, said shower region is a substantially circular region having a diameter of 160 to 180 mm.

Claim 15

A method according to claim 13, wherein the size of said opposing portion is larger than that of a wafer W.

Claim 16

A method according to claim 3, wherein said shower region and said opposing portion comprise an outline similar to that of said substrate.

Claim 17

A method according to claim 13, wherein an interval between said first and second electrodes is set to be 8 to 15 mm.