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US5444655A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile semiconductor memory device with a small distribution width of cell transistor threshold voltage after erasing data
Assignee: Toshiba Corp
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Filing: 1994-05-17
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Granted: 1995-08-22
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Expires: 2014-05-17
Abstract
Abstract A semiconductor memory device includes a silicon chip, a memory cell transistor formed in the chip, a charge pump circuit formed in the chip, for boosting a source potential to generate a boosted potential, and a switching circuit formed in the chip. The switching circuit switches the portions to which the boosted voltage is supplied, depending on whether data is being written or erased. When writing data, the boosted potential is led to a drain of the memory cell transistor. When erasing data, the boosted potential is led to a source of the memory cell transistor.
Inventors
- 👤 Kuniyoshi Yoshikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:08
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/12; G11C16/14
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
117 words
A semiconductor memory device comprising: a semiconductor chip; a memory cell transistor provided in the chip and having a gate insulating film which includes a charge store layer for controlling a threshold value; generation means provided in the semiconductor chip, for boosting a source potential to generate a boosted potential; and switching means for switching destination portions to which a boosted potential is applied, depending on whether data is written or erased, such that the boosted potential is applied to a drain of the memory cell transistor from the generation means while data is written, and the boosted potential is supplied to a source of the memory cell transistor from the generation means while data is erased.
Claim 2
Dependent Claim
117 words
A semiconductor memory device comprising: a semiconductor chip; a memory cell transistor provided in the chip and having a gate insulating film which includes a charge store layer for controlling a threshold value; generation means provided in the semiconductor chip, for boosting a source potential to generate a boosted potential; and switching means for switching destination portions to which a boosted potential is applied, depending on whether data is written or erased, such that the boosted potential is applied to a drain of the memory cell transistor from the generation means while data is written, and the boosted potential is supplied to a source of the memory cell transistor from the generation means while data is erased.
Claim 3
Dependent Claim
18 words
A semiconductor memory device according to claim 1, wherein the charge store layer is a floating gate electrode.
Claim 4
Dependent Claim
72 words
A semiconductor memory device according to claim 2, wherein a sufficiently high potential is applied to a gate of the memory cell transistor and a low potential lower than the boosted potential is applied to the source of the memory cell transistor, so that a current flows from the drain to the source to introduce hot electrons into the floating gate electrode, while data is being written into the memory cell transistor.
Claim 5
Dependent Claim
40 words
A semiconductor memory device according to claim 3, wherein the sufficiently high potential is a first positive potential, the boosted potential is a second positive potential lower than the first positive potential, and the low potential is a grounding potential.
Claim 6
Dependent Claim
25 words
A semiconductor memory device according to claim 4, wherein the first positive potential is approximately 12 V and the second positive potential is 6.5 V.
Claim 7
Dependent Claim
69 words
A semiconductor memory device according to claim 2, wherein a sufficiently low potential is applied to a gate of the memory cell transistor, and the boosted potential is applied to the source of the memory cell transistor to generate an F-N tunnel current flowing from the source to the floating gate electrode, thus extracting electrons from the floating gate electrode, when data is erased from the memory cell transistor.
Claim 8
Dependent Claim
17 words
A semiconductor memory device according to claim 6, wherein the sufficiently low potential is a negative potential.
Claim 9
Dependent Claim
23 words
A semiconductor memory device according to claim 7, wherein the negative potential is approximately -8 V and the boosted potential is 6.5 V.
Claim 10
Dependent Claim
23 words
A semiconductor memory device according to claim 7, wherein the negative potential is approximately -7 V and the boosted potential is 7 V.
Claim 11
Dependent Claim
17 words
A semiconductor memory device according to claim 1, wherein the generation means is a charge pump circuit.
Claim 12
Dependent Claim
56 words
A semiconductor memory device according to claim 10, wherein the switching means comprises a supply end to which the boosted potential is applied from the charge pump circuit, a first boosted potential discharge end connected to a source line, and a second boosted potential discharge end connected to a bit line by a column selection circuit.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-21 | 1999-02-20 | 1999-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-21 | 2003-02-20 | 2003-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-21 | 2007-02-20 | 2007-08-22 | $7700.00 | Window Closed / Lapsed |