Plasma CVD apparatus and processes

Claim 3

An apparatus according to claim 1 in which said refractory metal oxide is selected from the group consisting of zirconium oxide, hafnium oxide and aluminum oxide.

Claim 4

An apparatus according to claim 1 in which said second inlet means for generating and supplying etchant gas plasma to said reaction chamber comprises a fused quartz conduit communicating between said reaction chamber and a valved supply of etchant gas, and having a thin, continuous barrier layer of refractory metal oxide covering the interior surface of said fused quartz conduit, and microwave-applying means associated with said conduit for producing a plasma of said etchant gas within said conduit for supply to said reaction chamber.

Claim 5

An apparatus according to claim 3 in which said barrier layer covering the interior surface of said quartz conduit has a thickness between about 0.25 and 1.0 microns.

Claim 6

An apparatus according to claim 3 in which said refractory metal oxide is selected from the group consisting of zirconium oxide, hafnium oxide and aluminum oxide.

Claim 7

An apparatus according to claim 1 comprising an elongate tubular fused quartz housing having a wide, flanged entrance end for receiving substrates to be coated and a narrow downstream evacuation end, an annular gas manifold, the downstream end of which is sealingly-engaged with the flanged entrance end of said tubular quartz housing, and the upstream end of which comprises an axial opening, said annular manifold having a transverse opening communicating with said etching means, a cover sealingly-engaged with the upstream end of said gas manifold and removable to permit access to the interior of said housing, and at least one opening through said cover communicating with said means for supplying processing gas to said reaction chamber.

Claim 8

An apparatus according to claim 1 comprising an annular resistance heating means surrounding said fused quartz housing for heating said barrier sufficiently to cause said deposit of silicon.

Claim 9

Process for producing an apparatus having a reaction chamber for the chemical vapor deposition of thin films of silicon onto a suitable substrate within said reaction chamber, and for the periodic in-situ removal of undesirable silicon deposits from the interior surface of the reaction chamber, comprising forming a chemical vapor deposition reaction chamber by coating the interior surface of a fused quartz housing with a continuous thin barrier layer of a refractory metal oxide having a thickness between about 0.25 and 1 micron, providing first inlet means for supplying processing gas to said reaction chamber under temperature and vacuum conditions which cause the desired deposit of a silicon film onto the surface of a suitable substrate within said reaction chamber and which produce the undesired deposit of a silicon film onto the interior surface of said reaction chamber including onto said continuous thin barrier layer of refractory metal oxide, and providing second inlet means for generating and supplying etchant gas plasma to said reaction chamber to react with, volatilize and remove said undesired deposit, said etchant gas normally etching and/or corroding a fused quartz housing, and said barrier layer of refractory metal oxide being inert to said etchant gas and providing a protective barrier on said fused quartz housing.

Claim 10

Process for producing an apparatus having a reaction chamber for the chemical vapor deposition of thin films of silicon onto a suitable substrate within said reaction chamber, and for the periodic in-situ removal of undesirable silicon deposits from the interior surface of the reaction chamber, comprising forming a chemical vapor deposition reaction chamber by coating the interior surface of a fused quartz housing with a continuous thin barrier layer of a refractory metal oxide having a thickness between about 0.25 and 1 micron, providing first inlet means for supplying processing gas to said reaction chamber under temperature and vacuum conditions which cause the desired deposit of a silicon film onto the surface of a suitable substrate within said reaction chamber and which produce the undesired deposit of a silicon film onto the interior surface of said reaction chamber including onto said continuous thin barrier layer of refractory metal oxide, and providing second inlet means for generating and supplying etchant gas plasma to said reaction chamber to react with, volatilize and remove said undesired deposit, said etchant gas normally etching and/or corroding a fused quartz housing, and said barrier layer of refractory metal oxide being inert to said etchant gas and providing a protective barrier on said fused quartz housing.

Claim 11

Process according to claim 8 in which said refractory metal oxide is selected from the group consisting of zirconium oxide, hafnium oxide and aluminum oxide.

Claim 12

Process according to claim 8 which comprises providing said reaction chamber with a second inlet means comprising a fused quartz conduit communicating between said reaction chamber and a valved supply of etchant gas, and coating said conduit with a thin, continuous barrier layer of refractory metal oxide covering the interior surface of said fused quartz conduit, and providing microwave-applying means associated with said conduit for producing a plasma of said etchant gas within said conduit for supply to said reaction chamber.

Claim 13

Process according to claim 10 which comprises applying said barrier coating in a thickness between about 0.25 and 1.0 micron.

Claim 14

Process according to claim 10 in which said refractory metal oxide is selected from the group consisting of zirconium oxide, hafnium oxide and aluminum oxide.

Claim 15

Process according to claim 8 comprising forming said reaction chamber as an elongate tubular fused quartz housing having a wide, flanged entrance end for receiving substrates to be coated, and a narrow downstream evacuation end, providing an annular gas manifold having an upstream end comprising an axial opening, an open downstream end and an intermediate transverse opening, sealingly-engaging the downstream end of said manifold with the wide flanged entrance end of said tubular quartz housing, sealingly-engaging said transverse opening with said etching means, and providing the upstream end of said gas manifold with a cover which is removable to permit access to the interior of said housing, said cover containing at least one opening communicating with said means for supplying processing gas to said reaction chamber.

Claim 16

Process according to claim 8 which comprises providing said fused quartz housing with an annular resistance heating means which surrounds said housing for heating said barrier layer sufficiently to cause said deposit of silicon.

Claim 17

Process for the chemical vapor deposition of thin films of silicon onto a suitable substrate within a reaction chamber, and for the periodic removal of undesirable silicon deposits from the interior surface of the reaction chamber, comprising introducing a said substrate within a chemical vapor deposition reaction chamber comprising a fused quartz housing having an interior surface carrying a continuous thin barrier layer of refractory metal oxide having a thickness between about 0.25 and 1.0 microns, supplying processing gas to said reaction chamber through a first inlet under temperature and vacuum conditions which cause the desired deposit of a silicon film onto the surface of said substrate within said reaction chamber and which produce the undesired deposit of a silicon film onto the interior surface of said reaction chamber including onto said thin barrier layer and periodically supplying etchant gas plasma to said reaction chamber through a second inlet to react with, volatilize and remove said undesired deposit, said etchant gas being one which normally etches and/or corrodes a fused quartz housing, and said barrier layer of refractory metal oxide being inert to said etchant gas and providing a protective barrier on said fused quartz housing.

Claim 18

Process for the chemical vapor deposition of thin films of silicon onto a suitable substrate within a reaction chamber, and for the periodic removal of undesirable silicon deposits from the interior surface of the reaction chamber, comprising introducing a said substrate within a chemical vapor deposition reaction chamber comprising a fused quartz housing having an interior surface carrying a continuous thin barrier layer of refractory metal oxide having a thickness between about 0.25 and 1.0 microns, supplying processing gas to said reaction chamber through a first inlet under temperature and vacuum conditions which cause the desired deposit of a silicon film onto the surface of said substrate within said reaction chamber and which produce the undesired deposit of a silicon film onto the interior surface of said reaction chamber including onto said thin barrier layer and periodically supplying etchant gas plasma to said reaction chamber through a second inlet to react with, volatilize and remove said undesired deposit, said etchant gas being one which normally etches and/or corrodes a fused quartz housing, and said barrier layer of refractory metal oxide being inert to said etchant gas and providing a protective barrier on said fused quartz housing.

Claim 19

Process according to claim 15 in which said refractory metal oxide is selected from the group consisting of zirconium oxide, hafnium oxide and aluminum oxide.

Claim 20

Process according to claim 15 which comprises periodically supplying etchant gas plasma to said reaction chamber through a second inlet comprising a fused quartz conduit communicating between said reaction chamber and a valved supply of etchant gas, said conduit comprising a thin, continuous barrier layer of refractory metal oxide covering the interior surface of said fused quartz conduit, and applying microwaves to said conduit to produce a plasma of said etchant gas within said conduit for supply to said reaction chamber.

Claim 21

Process according to claim 17 in which said barrier layer has a thickness between about 0.25 and 1.0 micron.

Claim 22

Process according to claim 17 in which said refractory metal oxide is selected from the group consisting of zirconium oxide, hafnium oxide and aluminum oxide.