Charge-transfer device having an improved charge-sensing section

Claim 2

A charge-transfer device comprising: a semiconductor substrate of a first conductivity type having a surface; a high-resistance well layer of a second conductivity type formed in said surface of said substrate; a charge-transfer channel layer of the first conductivity type formed in a surface of said well layer; a charge storage channel layer of the first conductivity type formed in said surface of said substrate so as to connect with said transfer channel layer; a charge release channel layer of the first conductivity type formed in said surface of said substrate so as to connect with said storage channel layer; a charge release drain layer of the first conductivity type formed in said surface of said substrate so as to connect with said release channel layer; an output gate electrode provided above the junction of said transfer channel layer and said storage channel layer, with an insulating film interposed between said output gate electrode and said junction; a covering insulating film formed on said substrate and corresponding to said storage channel layer; a reset gate electrode provided above said release channel layer, with an insulating film interposed therebetween; a charge-sensing channel layer of the second conductivity type of a charge-sensing transistor, formed in said substrate such that said sensing channel layer and said storage channel layer contact with each other; and a source and drain layers of the second conductivity type of said charge-sensing transistor, formed in said surface of said substrate so as to face each other with said sensing channel layer interposed therebetween; wherein said storage channel layer contains a first surface portion which adjoin said transfer channel layer and is in contact with said covering insulating film, and a second surface portion which adjoins said release channel layer and is in contact with said covering insulating film.

Claim 3

A charge-transfer device according to claim 1, wherein said storage channel layer, release channel layer, release drain layer, and sensing channel layer are formed in said well layer.

Claim 4

A charge-transfer device according to claim 2, wherein said sensing channel layer is arranged between said storage channel layer and said covering insulating film, and is arranged so as to be in contact with neither said transfer channel layer nor said release channel layer.

Claim 5

A charge-transfer device according to claim 2, wherein said storage channel layer is arranged between said sensing channel layer and said covering insulating film, and said sensing channel layer is arranged so as to be in contact with neither said transfer channel layer nor said release channel layer.

Claim 6

A charge-transfer device according to claim 1, wherein said storage channel layer is arranged between said sensing channel layer and said covering insulating film and said sensing channel layer is arranged so as to be in contact with both said transfer channel layer and said release channel layer.

Claim 7

A charge-transfer device according to claim 1, wherein the potential of said storage channel layer without charges is set higher than that of said release drain layer.

Claim 8

A charge-transfer device according to claim 6, wherein the potential inequality between said storage channel layer and said release drain layer is set by adjusting the impurity concentration in said storage channel layer.

Claim 9

A charge-transfer device according to claim 1, wherein a control gate electrode is provided above said storage channel layer, with said covering insulating film interposed therebetween.

Claim 10

A charge-transfer device comprising: a semiconductor substrate of a first conductivity type having a surface; a high resistance well layer of a second conductivity type formed in said surface of said substrate; a charge-transfer channel layer of the first conductivity type formed in a surface of said well layer; a charge storage channel layer of the first conductivity type formed in said surface of said well layer so as to connect with said transfer channel layer; a charge release channel layer of the first conductivity type formed in said surface of said well layer so as to connect with said storage channel layer; a charge release drain layer of the first conductivity type formed in said surface of said well layer so as to connect with said release channel layer; an output gate electrode provided above the junction of said transfer channel layer and said storage channel layer, with an insulating film interposed between said output gate electrode and said junction; a covering insulating film formed on said substrate and corresponding to said storage channel layer; a reset gate electrode provided above said release channel layer, with an insulating film interposed there between; a charge-sensing channel layer of the second conductivity type of a charge-sensing transistor, arranged between said storage channel layer and said covering insulating film, said sensing channel layer being arranged so as to be in contact with neither said transfer channel layer nor said release channel layer, and said storage channel layer containing a first surface portion which adjoins said transfer channel layer and is in contact with said covering insulating film, and a second surface portion which adjoins said release channel layer and is in contact with said covering insulating film; and a source and drain layers of the second conductivity type of said charge-sensing transistor, formed in said surface of said substrate so as to face each other with said sensing channel interposed therebetween.

Claim 11

A charge-transfer device comprising: a semiconductor substrate of a first conductivity type having a surface; a high resistance well layer of a second conductivity type formed in said surface of said substrate; a charge-transfer channel layer of the first conductivity type formed in a surface of said well layer; a charge storage channel layer of the first conductivity type formed in said surface of said well layer so as to connect with said transfer channel layer; a charge release channel layer of the first conductivity type formed in said surface of said well layer so as to connect with said storage channel layer; a charge release drain layer of the first conductivity type formed in said surface of said well layer so as to connect with said release channel layer; an output gate electrode provided above the junction of said transfer channel layer and said storage channel layer, with an insulating film interposed between said output gate electrode and said junction; a covering insulating film formed on said substrate and corresponding to said storage channel layer; a reset gate electrode provided above said release channel layer, with an insulating film interposed there between; a charge-sensing channel layer of the second conductivity type of a charge-sensing transistor, arranged between said storage channel layer and said covering insulating film, said sensing channel layer being arranged so as to be in contact with neither said transfer channel layer nor said release channel layer, and said storage channel layer containing a first surface portion which adjoins said transfer channel layer and is in contact with said covering insulating film, and a second surface portion which adjoins said release channel layer and is in contact with said covering insulating film; and a source and drain layers of the second conductivity type of said charge-sensing transistor, formed in said surface of said substrate so as to face each other with said sensing channel interposed therebetween.

Claim 12

A charge-transfer device according to claim 9, wherein the potential of said storage channel layer without charges is set higher than that of said release drain layer.

Claim 13

A charge-transfer device according to claim 10, wherein the potential inequality between said storage channel layer and said release drain layer is set by adjusting the impurity concentration in said storage channel layer.

Claim 14

A charge-transfer device according to claim 9, wherein a control gate electrode is provided above said storage channel layer, with said covering insulating film interposed therebetween.

Claim 15

A charge-transfer device comprising: a semiconductor substrate of a first conductivity type having a surface; a high-resistance well layer of a second conductivity type formed in said surface of said substrate; a charge-transfer channel layer of the first conductivity type formed in a surface of said well layer; a charge storage channel layer of the first conductivity type formed in said surface of said substrate so as to connect with said transfer channel layer; a charge release channel layer of the first conductivity type formed in said surface of said substrate so as to connect with said storage channel layer; a charge release drain layer of the first conductivity type formed in said surface of said substrate so as to connect with said release channel layer an output gate electrode provided above the junction of said transfer channel layer and said storage channel layer, with an insulating film interposed between said output gate electrode and said junction; a covering insulating film formed on said substrate and corresponding to said storage channel layer; a reset gate electrode provided above said release channel layer, with an insulating film interposed therebetween; a charge-sensing channel layer of the second conductivity type of a charge-sensing transistor, formed in said substrate such that said sensing channel layer and said storage channel layer contact each other; and a source and drain layers of the second conductivity type of said charge-sensing transistor, formed in said surface of said substrate so as to face each other with said sensing channel layer interposed therebetween; wherein the potential of said storage channel layer without charges is set higher than that of said release drain layer.

Claim 16

A charge-transfer device comprising: a semiconductor substrate of a first conductivity type having a surface; a high-resistance well layer of a second conductivity type formed in said surface of said substrate; a charge-transfer channel layer of the first conductivity type formed in a surface of said well layer; a charge storage channel layer of the first conductivity type formed in said surface of said substrate so as to connect with said transfer channel layer; a charge release channel layer of the first conductivity type formed in said surface of said substrate so as to connect with said storage channel layer; a charge release drain layer of the first conductivity type formed in said surface of said substrate so as to connect with said release channel layer an output gate electrode provided above the junction of said transfer channel layer and said storage channel layer, with an insulating film interposed between said output gate electrode and said junction; a covering insulating film formed on said substrate and corresponding to said storage channel layer; a reset gate electrode provided above said release channel layer, with an insulating film interposed therebetween; a charge-sensing channel layer of the second conductivity type of a charge-sensing transistor, formed in said substrate such that said sensing channel layer and said storage channel layer contact each other; and a source and drain layers of the second conductivity type of said charge-sensing transistor, formed in said surface of said substrate so as to face each other with said sensing channel layer interposed therebetween; wherein the potential of said storage channel layer without charges is set higher than that of said release drain layer.

Claim 17

A charge-transfer device according to claim 13, wherein the potential inequality between said storage channel layer and said release drain layer is set by adjusting the impurity concentration in said storage channel layer.

Claim 18

A charge-transfer device according to claim 13, wherein the potential inequality between said storage channel layer and said release drain layer is set by adjusting the potential of said release drain layer.

Claim 19

A charge-transfer device according to claim 13, wherein said storage channel layer contains a first surface portion which adjoins said transfer channel layer and is in contact with said covering insulating film, and a second surface portion which adjoins said release channel layer and is in contact with said covering insulating film.

Claim 20

A charge-transfer device according to claim 13, wherein said storage channel layer, release channel layer, release drain layer, and sensing channel layer are formed in said well layer.

Claim 21

A charge-transfer device according to claim 17, wherein said sensing channel layer is arranged between said storage channel layer and said covering insulating film and is arranged so as to be in contact with neither said transfer channel layer nor said release channel layer.

Claim 22

A charge-transfer device according to claim 17, wherein said storage channel layer is arranged between said sensing channel layer and said covering insulating film, and said sensing channel layer is arranged so as to be in contact with neither said transfer channel layer nor said release channel layer.

Claim 23

A charge-transfer device according to claim 13, wherein said storage channel layer is arranged between said sensing channel layer and said covering insulating film, and said sensing channel layer is arranged so as to be in contact with both said transfer channel layer and said release channel layer.