Method of manufacturing semiconductor device with copper core bumps

Claim 1

A method of manufacturing a semiconductor device by forming copper core bumps on a circuit pattern on a circuit board by way of plating using a resist pattern, characterized by forming a solvent-reactive first dry film and a water-soluble second dry film as successive layers as said resist pattern, and removing said second dry film after the copper core bumps are formed.

Claim 2

A method of manufacturing a semiconductor device by forming copper core bumps on a circuit pattern on a circuit board by way of plating using a resist pattern, characterized by forming a solvent-reactive first dry film and a water-soluble second dry film as successive layers as said resist pattern, and removing said second dry film after the copper core bumps are formed.

Claim 3

A method of manufacturing a circuit board for a semiconductor device, comprising: a through hole forming step for forming through holes in a circuit board with thin copper foils on both surfaces of the circuit board, a plating step for forming copper plates on the surfaces of the circuit board with the through holes, a patterning step for forming, by using an etching solution, a die pattern region on one surface of the circuit board and bump forming regions on the other surface of the circuit board, a resist/dry film laminating step for laminating resist/dry films on both surfaces of the circuit board after patterning step to thereby form resist pattern openings at the die pattern region and the bump forming regions, said resist/dry film laminating step including radiation and development, an activation etching step for removing residues of the resist/dry films dissolved by the radiation and development in the resist/dry film laminating step and deposited on the bump forming regions to thereby activate a surface of copper at the bump forming regions, a mask/dry film laminating step for laminating a mask/dry film on the resist/dry film at a side of the die pattern region to thereby mask the die pattern region, a bump forming step for forming copper core bumps on the bump forming regions on the board, and a mask/dry film developing step for removing the mask/dry film on the resist/dry film.

Claim 4

A method of manufacturing a circuit board for a semiconductor device, comprising: a through hole forming step for forming through holes in a circuit board with thin copper foils on both surfaces of the circuit board, a plating step for forming copper plates on the surfaces of the circuit board with the through holes, a patterning step for forming, by using an etching solution, a die pattern region on one surface of the circuit board and bump forming regions on the other surface of the circuit board, a resist/dry film laminating step for laminating resist/dry films on both surfaces of the circuit board after patterning step to thereby form resist pattern openings at the die pattern region and the bump forming regions, said resist/dry film laminating step including radiation and development, an activation etching step for removing residues of the resist/dry films dissolved by the radiation and development in the resist/dry film laminating step and deposited on the bump forming regions to thereby activate a surface of copper at the bump forming regions, a mask/dry film laminating step for laminating a mask/dry film on the resist/dry film at a side of the die pattern region to thereby mask the die pattern region, a bump forming step for forming copper core bumps on the bump forming regions on the board, and a mask/dry film developing step for removing the mask/dry film on the resist/dry film.