Magnetic spin transistor

Claim 2

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and spin-polarized chemical potentials and comprising a first conductive ferromagnetic layer and a second conductive ferromagnetic layer; a third conductive layer interposed between said first and second ferromagnetic layers, said third layer being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said third layer and thin enough that the spin-polarized chemical potential of said first ferromagnetic layer is coupled to that of said second ferromagnetic layer via a nonequilibrium spin population in said third layer; means for passing a biasing current from said first ferromagnetic layer to said third conductive layer; means for detecting a resultant voltage between said second ferromagnetic layer and said third conductive layer; and means for switching only one of said ferromagnetic layers between two opposed states of magnetization.

Claim 3

A magnetic spin transistor as recited in claim 1, wherein said voltage detecting means comprises a first lead electrically connected to said second ferromagnetic layer and a second lead connected to a principal surface of said third layer opposite said first ferromagnetic layer.

Claim 4

A magnetic spin transistor as recited in claim 1, comprising a repeating structure of a plurality of alternating ones of said first and second layers interposed by a plurality of said third layers.

Claim 5

A magnetic spin transistor as recited in claim 1, wherein one of said ferromagnetic layers has a first coercivity lower than a second coercivity of the other of said ferromagnetic layers.

Claim 6

A magnetic spin transistor as recited in claim 4, wherein said one ferromagnetic layer is patterned to a first area smaller than a second area to which said other ferromagnetic layer is patterned.

Claim 7

A magnetic spin transistor as recited in claim 4, wherein said first, second, and third layers each have a lower surface edge aligned in a common plane and said switching means comprises a recording medium recorded with a serial train of magnetic domains; and means for imparting relative motion between said recording medium and said lower surface edges.

Claim 8

A magnetic spin transistor as recited in claim 6, wherein said domains exert a magnetic field on said first, second, and third layers falling between said first and second coercivities.

Claim 9

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and spin-polarized chemical potentials and comprising a first conductive ferromagnetic layer and a second conductive ferromagnetic layer; a third conductive layer interposed between said first and second ferromagnetic layers, said third layer being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said third layer and thin enough that the spin-polarized chemical potential of said first ferromagnetic layer is coupled to that of said second ferromagnetic layer via a nonequilibrium spin population in said third layer; and means for switching only one of said ferromagnetic layers between two opposed states of magnetization, and wherein said first and second ferromagnetic layers and said third layer are circularly symmetric about an axis and further comprising first and second conductive layers circularly symmetric about said axis and formed on said third layer; an electrical bias source connected across said first ferromagnetic layer and one of said conductive layers disposed laterally between said second ferromagnetic layer and the other of said conductive layers; and voltage detecting means for detecting a voltage between said second ferromagnetic layer and said other conductive layer.

Claim 10

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and spin-polarized chemical potentials and comprising a first conductive ferromagnetic layer and a second conductive ferromagnetic layer; a third conductive layer interposed between said first and second ferromagnetic layers, said third layer being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said third layer and thin enough that the spin-polarized chemical potential of said first ferromagnetic layer is coupled to that of said second ferromagnetic layer via a nonequilibrium spin population in said third layer; and means for switching only one of said ferromagnetic layers between two opposed states of magnetization, and wherein said first and second ferromagnetic layers and said third layer are circularly symmetric about an axis and further comprising first and second conductive layers circularly symmetric about said axis and formed on said third layer; an electrical bias source connected across said first ferromagnetic layer and one of said conductive layers disposed laterally between said second ferromagnetic layer and the other of said conductive layers; and voltage detecting means for detecting a voltage between said second ferromagnetic layer and said other conductive layer.

Claim 11

A magnetic transistor whose operation is dependent on relative electron spin polarizations and comprising a ferromagnetic region having a sufficiently small area that a ferromagnetic wedge effect is manifested along the edges thereof and extending to a substantial central portion thereof; a first and a second region formed over respective portions of said ferromagnetic region, said first and second regions being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between sub-bands and having lateral dimensions of the order of a spin depth; means for driving a biasing current through respective interfaces between said first and second regions and said ferromagnetic region; and means for sensing a voltage between said first and second regions.

Claim 12

A magnetic transistor whose operation is dependent on relative electron spin polarizations and comprising a ferromagnetic region having a sufficiently small area that a ferromagnetic wedge effect is manifested along the edges thereof and extending to a substantial central portion thereof; a first and a second region formed over respective portions of said ferromagnetic region, said first and second regions being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between sub-bands and having lateral dimensions of the order of a spin depth; means for driving a biasing current through respective interfaces between said first and second regions and said ferromagnetic region; and means for sensing a voltage between said first and second regions.

Claim 13

A magnetic transistor as recited in claim 9, further comprising means for imposing a first magnetic state and a second magnetic state upon said ferromagnetic region, said first magnetic state comprising a first substantially uniformly magnetized area underlying said first region and a second area of substantially zero net magnetization underlying said second region, said second magnetic state comprising a third substantially uniformly magnetized area underlying said second region and a fourth area of substantially zero net magnetization underlying said first region.

Claim 14

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and spin-polarized chemical potentials and comprising a first repeating structure of a plurality of alternating first conductive ferromagnetic layers and second conductive ferromagnetic layers with third conductive layers interposed in said repeating structure between said first and second layers, said third layers being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said third layer and thin enough that the spin-polarized chemical potential of said first ferromagnetic layers is coupled to that of said second ferromagnetic layers via a nonequilibrium spin population in said third layers; and a second repeating structure of a plurality of alternating fourth conductive ferromagnetic layers and fifth conductive ferromagnetic layers with sixth conductive layers interposed in said repeating structure between said fourth and fifth layers, said sixth layers being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said sixth layer and thin enough that the spin polarized chemical potential of said fourth ferromagnetic layers is coupled to that of said fifth ferromagnetic layers via a non equilibrium spin population in said sixth layers; wherein a sign of a band-structure factor denotes whether charge transport across an interface between a respective ferromagnetic layer and third or sixth layer is dominated by majority spins or by minority spins and wherein said first and second ferromagnetic layers are characterized by respective band-structure factors of a first sign, said fourth ferromagnetic layers are characterized by a band-structure factor of said first sign, and said fifth ferromagnetic layers are characterized by a band-structure factor of a second sign.

Claim 15

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and spin-polarized chemical potentials and comprising a first repeating structure of a plurality of alternating first conductive ferromagnetic layers and second conductive ferromagnetic layers with third conductive layers interposed in said repeating structure between said first and second layers, said third layers being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said third layer and thin enough that the spin-polarized chemical potential of said first ferromagnetic layers is coupled to that of said second ferromagnetic layers via a nonequilibrium spin population in said third layers; and a second repeating structure of a plurality of alternating fourth conductive ferromagnetic layers and fifth conductive ferromagnetic layers with sixth conductive layers interposed in said repeating structure between said fourth and fifth layers, said sixth layers being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said sixth layer and thin enough that the spin polarized chemical potential of said fourth ferromagnetic layers is coupled to that of said fifth ferromagnetic layers via a non equilibrium spin population in said sixth layers; wherein a sign of a band-structure factor denotes whether charge transport across an interface between a respective ferromagnetic layer and third or sixth layer is dominated by majority spins or by minority spins and wherein said first and second ferromagnetic layers are characterized by respective band-structure factors of a first sign, said fourth ferromagnetic layers are characterized by a band-structure factor of said first sign, and said fifth ferromagnetic layers are characterized by a band-structure factor of a second sign.

Claim 16

A magnetic spin transistor as recited in claim 11 further comprising means for switching one of said first and second ferromagnetic layers and one of said fourth and fifth ferromagnetic layers between two states of opposed magnetization.

Claim 17

A magnetic spin transistor as recited in claim 12 wherein the lowermost ferromagnetic layer of said first and second repeating structures is common so as to provide an equal reference potential.

Claim 18

A magnetic spin transistor as recited in claim 13 further comprising means for driving bias current through said first and second repeating structures and means for sensing a voltage across the uppermost ferromagnetic layers of said first and second repeating structures.

Claim 19

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and spin-polarized chemical potentials and comprising a first conductive ferromagnetic layer and a second conductive ferromagnetic layer, one of said ferromagnetic layers having a first coercivity lower than a second coercivity of the other of said ferromagnetic layers and said one ferromagnetic layer being patterned to a first area smaller than a second area to which said other ferromagnetic layer is patterned; a third conductive layer interposed between said first and second layers, said third layer being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said third layer and thin enough that the spin-polarized chemical potential of said first ferromagnetic layer is coupled to that of said second ferromagnetic layer via a non-equilibrium spin population in said third layer; and means for switching only one of said ferromagnetic layers between two opposed states of magnetization, said switching means comprising a first current path passing over said first area of said one ferromagnetic layer and selectively producing a magnetic field in said one ferromagnetic layer.

Claim 20

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and spin-polarized chemical potentials and comprising a first conductive ferromagnetic layer and a second conductive ferromagnetic layer, one of said ferromagnetic layers having a first coercivity lower than a second coercivity of the other of said ferromagnetic layers and said one ferromagnetic layer being patterned to a first area smaller than a second area to which said other ferromagnetic layer is patterned; a third conductive layer interposed between said first and second layers, said third layer being of a material having electron levels that are not significantly affected by the electron spin so that there is little energy difference between spin sub-bands and having a thickness not substantially greater than a spin depth of electrons in said third layer and thin enough that the spin-polarized chemical potential of said first ferromagnetic layer is coupled to that of said second ferromagnetic layer via a non-equilibrium spin population in said third layer; and means for switching only one of said ferromagnetic layers between two opposed states of magnetization, said switching means comprising a first current path passing over said first area of said one ferromagnetic layer and selectively producing a magnetic field in said one ferromagnetic layer.

Claim 21

A magnetic spin transistor as recited in claim 15, wherein said switching means further comprises a second current path passing over said first area of said one ferromagnetic layer and selectively producing a magnetic field in said one ferromagnetic layer; and two bipolar current sources respectively connected to said first and second current paths.

Claim 22

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and comprising a first conductive ferromagnetic member; a second metallic base member having a thickness; a third conductive member having an upper surface and contacting at its two end portions said first ferromagnetic member and said second base member, said third member being of a material having electron levels that are not significantly affected by the electron spin and the thickness of said third member being less than or of the order of the spin depth ##EQU5## where D is the electronic diffusion coefficient and T 2 is its spin relaxation time, and a fourth metallic surface member and a fifth conductive ferromagnetic surface member, both said fourth and fifth members contacting the upper surface of said third member where said upper surface of said third member is directly over said first ferromagnetic member.

Claim 23

A magnetic spin transistor whose operation is dependent on relative electron spin polarizations and comprising a first conductive ferromagnetic member; a second metallic base member having a thickness; a third conductive member having an upper surface and contacting at its two end portions said first ferromagnetic member and said second base member, said third member being of a material having electron levels that are not significantly affected by the electron spin and the thickness of said third member being less than or of the order of the spin depth ##EQU5## where D is the electronic diffusion coefficient and T 2 is its spin relaxation time, and a fourth metallic surface member and a fifth conductive ferromagnetic surface member, both said fourth and fifth members contacting the upper surface of said third member where said upper surface of said third member is directly over said first ferromagnetic member.

Claim 24

A magnetic spin transistor as recited in claim 17, further comprising electrical leads individually connected to said first, second, fourth and fifth members.