Patent US5432122A successfully refreshed from Google Patents.
US5432122A
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US
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Method of making a thin film transistor by overlapping annealing using lasers
Assignee: LG Electronics Inc
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Filing: 1993-11-03
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Granted: 1995-07-11
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Expires: 2013-11-03
Abstract
Abstract The present invention provides a method of making a thin film transistor for driving a liquid crystal display comprising the steps of forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode, and scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped. According to the method of making a thin film transistor for driving a liquid crystal display of the present invention, a thin film transistor suitable for HDTV, the field effect mobility of which is high, is achieved. Further, in making a thin film transistor, a separate processing step is not required and the number of processing steps can be reduced because constructional features of a TFT are utilized.
Inventors
- 👤 Kie S. Chae
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:09
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D30/6729; H10D30/673; H10D30/6733; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/381; H10P14/3814; H10P14/382
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
143 words
A method of making a thin film transistor for driving a liquid crystal display comprising the steps of: forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode; scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped; and scanning said laser beams through an optical system including prisms arranged at intervals so that the overlapped portions of the laser beams pass through the prisms for increasing the density of the laser beams scanned on overlapped portions compensating for a difference in optical efficiency between portions of the transistor scanned by the overlapped part of the laser beam and portions of the transistor scanned by a non-overlapped part of the laser beam.
Claim 2
Independent Claim
143 words
A method of making a thin film transistor for driving a liquid crystal display comprising the steps of: forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode; scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped; and scanning said laser beams through an optical system including prisms arranged at intervals so that the overlapped portions of the laser beams pass through the prisms for increasing the density of the laser beams scanned on overlapped portions compensating for a difference in optical efficiency between portions of the transistor scanned by the overlapped part of the laser beam and portions of the transistor scanned by a non-overlapped part of the laser beam.
Claim 3
Dependent Claim
27 words
A method of making thin film transistor for driving liquid crystal display as claimed in claim 1, wherein said laser beam is scanned through a cylindrical lens.
Claim 4
Dependent Claim
39 words
A method of making thin film transistor for driving a liquid crystal display as claimed in claim 1, further comprising a step of applying a protective layer on said amorphous silicon layer prior to scanning of said laser beam.
Claim 5
Dependent Claim
29 words
A method of making thin film transistor for driving liquid crystal display as claimed in claim 1, wherein the construction of said thin film transistor is dual gate construction.
Claim 6
Independent Claim
79 words
A method of making a thin film transistor for driving a liquid crystal display comprising the steps of: forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode; applying a protective layer on said amorphous silicon layer; and scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped.
Claim 7
Independent Claim
79 words
A method of making a thin film transistor for driving a liquid crystal display comprising the steps of: forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode; applying a protective layer on said amorphous silicon layer; and scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1998-07-10 | 1999-01-09 | 1999-07-11 | $2000.00 | Window Closed / Lapsed |
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