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US5428310A Expired / Lapsed US ⏱️ 0.0 years remaining

Voltage compensating delay element

Assignee: Micron Technology Inc
•
Filing: 1994-05-19
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Granted: 1995-06-27
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Expires: 2014-05-19
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Abstract

Abstract A signal-delaying capacitive circuit applied to a node in a microcircuit device is immunized against the variation of the supply voltage by a metal-oxide semiconductor connected in series between the node and the signal-delaying capacitive circuit. The gate of tile semiconductor is biased with a voltage signal proportional to the supply voltage, whereby the resistance of the semiconductor is increased as the supply voltage decreases; thus, isolating the capacitive circuit from the node and reducing the delay.

Inventors

  • 👤 Stephen L. Casper
  • 👤 Daniel R. Loughmiller

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 19:53
CPC Classifications
H; H03; H03K; H03K5/00; H03K5/13; H03K5/133

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 165 words
In an electronic circuit having a signal path comprising a series of devices biased by a supply voltage in which a delaying capacitive element is connected in a shunt path at an intermediate node along said signal path at which said signal is being delayed, said shunt path containing said capacitive element between said intermediate node and a reference point, an improvement for compensating for variations in the delaying effect of said capacitive element as a result of variations in the circuit supply voltage, said improvement comprising: a controllable resistance element connected in said shunt path in series with said capacitive element between said intermediate node and said reference point; said resistance element having a resistivity controllable by said bias voltage wherein said resistivity decreases and said delaying effect at said intermediate node increases when said bias voltage is increased; and means for generating said bias voltage as a function of said supply voltage wherein said bias voltage is increased as the supply voltage increases.
Claim 2
Dependent Claim 165 words
In an electronic circuit having a signal path comprising a series of devices biased by a supply voltage in which a delaying capacitive element is connected in a shunt path at an intermediate node along said signal path at which said signal is being delayed, said shunt path containing said capacitive element between said intermediate node and a reference point, an improvement for compensating for variations in the delaying effect of said capacitive element as a result of variations in the circuit supply voltage, said improvement comprising: a controllable resistance element connected in said shunt path in series with said capacitive element between said intermediate node and said reference point; said resistance element having a resistivity controllable by said bias voltage wherein said resistivity decreases and said delaying effect at said intermediate node increases when said bias voltage is increased; and means for generating said bias voltage as a function of said supply voltage wherein said bias voltage is increased as the supply voltage increases.
Claim 3
Dependent Claim 22 words
The improvement of claim 1, wherein said controllable resistance element comprises a transistor having a gate connected to said bias voltage supply.
Claim 4
Dependent Claim 13 words
The improvement of claim 2, wherein said transistor is a first metal-oxide semiconductor.
Claim 5
Dependent Claim 22 words
The improvement of claim 3, wherein said capacitive element comprises a second metal-oxide semiconductor having a source and a drain connected together.
Claim 6
Dependent Claim 30 words
The improvement of claim 4, wherein said second metal oxide semiconductor has a gate connected to said transistor, and said source and drain are connected together to said reference point.
Claim 7
Dependent Claim 29 words
The improvement of claim 5, wherein said first metal-oxide semiconductor has a drain connected to said node, and a source connected to a gate of said second metal-oxide semiconductor.
Claim 8
Dependent Claim 19 words
The improvement of claim 4, wherein said electronic circuit and said improvement are part of an integrated microcircuit device.
Claim 9
Dependent Claim 13 words
The improvement of claim 7, wherein said electronic circuit is a ring oscillator.

References Cited (Backward Citations)

US3641370A Cited
US5051630A Cited
US5192886A Cited
US5164621A Cited
US5218237A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-06-26 1998-12-26 1999-06-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-06-26 2002-12-26 2003-06-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-06-26 2006-12-26 2007-06-27 $7700.00 Window Closed / Lapsed

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