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US5428226A
Expired / Lapsed
US
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Relativistic semiconductor plasma wave frequency up-converter with energized portion
Assignee: Individual
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Filing: 1994-03-07
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Granted: 1995-06-27
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Expires: 2014-03-07
Abstract
Abstract A device that frequency up-shifts an impinging electromagnetic wave, facilitating signal pulse compression, consisting of a semiconductor block or waveguide containing an optically induced relativistic plasma wave which interacts with an applied or self generated electromagnetic signal.
Inventors
- 👤 Jeff C. Adams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:43
CPC Classifications
H; H10; H10F; H10F30/00; H03; H03K; H03K5/00; H03K5/01; H03K5/12; H03K5/159
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
100 words
A device for modifying electromagnetic signals, comprising: (a) a semiconductor with means for introducing an electromagnetic signal into the semiconductor; and (b) means for applying energy to a location within the semiconductor, creating an energized portion and a non-energized of the semiconductor, which energy creates a plasma front within the semiconductor which plasma front interacts with the electromagnetic signal as it propagates within the semiconductor, and moving the location of energy application and resulting plasma front toward the non-energized portion of the semiconductor, which movement of the plasma front affects the interaction of the plasma front with the electromagnetic signal.
Claim 2
Independent Claim
100 words
A device for modifying electromagnetic signals, comprising: (a) a semiconductor with means for introducing an electromagnetic signal into the semiconductor; and (b) means for applying energy to a location within the semiconductor, creating an energized portion and a non-energized of the semiconductor, which energy creates a plasma front within the semiconductor which plasma front interacts with the electromagnetic signal as it propagates within the semiconductor, and moving the location of energy application and resulting plasma front toward the non-energized portion of the semiconductor, which movement of the plasma front affects the interaction of the plasma front with the electromagnetic signal.
Claim 3
Dependent Claim
36 words
The device of claim 1 wherein the means for moving the location of energy application moves the resulting plasma front at a speed within two orders of magnitude of the electromagnetic propagation speed within the semiconductor.
Claim 4
Dependent Claim
44 words
The device of claim 1 wherein the means for applying energy to a location on the semiconductor moves the location of energy application and resulting plasma front in a direction between 90 degrees and 270 degrees different from the direction of the electromagnetic signals.
Claim 5
Dependent Claim
40 words
The device of claim 1 wherein the means for applying energy to a location on the semiconductor moves the location of energy application and resulting plasma front in a direction within 90 degrees of the direction of the electromagnetic signals.
Claim 6
Dependent Claim
44 words
The device of claim 1 wherein the means for applying energy to a location on the semiconductor comprises a pulse of laser light having numerous ray paths to the semiconductor which ray paths are directed such that the pulse sweeps toward the non-energized portion.
Claim 7
Dependent Claim
14 words
The device of claim 5 wherein the ray paths are directed by a prism.
Claim 8
Dependent Claim
29 words
The device of claim 1 wherein the means for applying energy to a location on the semiconductor comprises a beam of laser light directed through an electro-optical beam deflector.
Claim 9
Dependent Claim
32 words
The device of claim 1 wherein the means for applying energy to a location on the semiconductor comprises a beam of laser light directed by means of phased array optical beam steering.
Claim 10
Dependent Claim
39 words
The device of claim 1 wherein the means for applying energy to a location on the semiconductor comprises a pulse of laser light passing through the semiconductor beginning at the energized portion and continuing on toward the non-energized portion.
Claim 11
Dependent Claim
25 words
The device of claim 1 wherein the means for applying energy to a location on the semiconductor comprises an electron beam with directional beam deflector.
Claim 12
Dependent Claim
22 words
The device of claim 1 further comprising a waveguide for which the semiconductor is a dielectric through which guided wave energy passes.
Claim 13
Dependent Claim
15 words
The device of claim 11 further comprising an electromagnetic signal generator coupled to the waveguide.
Claim 14
Dependent Claim
18 words
The device of claim 12 further comprising a directional coupler coupled between the signal generator and the waveguide.
Claim 15
Dependent Claim
18 words
The device of claim 12 further comprising an optical switch coupled between the signal generator and the waveguide.
Claim 16
Dependent Claim
17 words
The device of claim 12 further comprising an electrical switch between the signal generator and the waveguide.
Claim 17
Dependent Claim
16 words
The device of claim 12 further comprising a circulator between the signal generator and the waveguide.
Claim 18
Dependent Claim
38 words
The device of claim 12 further comprising a stationary laser beam directed upon a portion of the semiconductor remote from the signal generator, which laser beam generates a plasma in the semiconductor which interacts with the electromagnetic signals.
Claim 19
Dependent Claim
68 words
The device of claim 12 wherein the waveguide has an end remote from the signal generator and further comprising: (a) a second waveguide electrically coupled to the semiconductor near the end of the waveguide and defining a gap between the first and the second waveguide, and (b) a stationary laser beam directed upon the gap, which laser beam generates a plasma in the semiconductor electrically coupling the waveguides.
Claim 20
Dependent Claim
31 words
The device of claim 12 further comprising a second waveguide high frequency coupled, by means of a capacitive gap, to an end of the first waveguide remote from the signal generator.
Claim 21
Dependent Claim
12 words
The device of claim 12 wherein the waveguide is a cavity resonator.
Claim 22
Dependent Claim
11 words
The device of claim 11 wherein the waveguide comprises two conductors.
Claim 23
Dependent Claim
14 words
The device of claim 21 wherein a voltage is applied across the two conductors.
Claim 24
Independent Claim
124 words
A device for generating fast electrical signals, comprising: (a) a pair of conductors coupled to a semiconductor material, with contact surfaces between each of the conductors and the semiconductor material, one of which contact surfaces adjoins a volume within the semiconductor material substantially between the conductors which volume has a length parallel to the contact surface, which length is greater than a width separating the contact surfaces; and (b) means for applying energy to a location within the volume's length, creating an energized portion and a non-energized portion within the volume's length which energy creates a plasma front and an electromagnetic signal within the conductors, and moving the location of energy application and resulting plasma front toward the non-energized portion of the volume's length.
Claim 25
Independent Claim
124 words
A device for generating fast electrical signals, comprising: (a) a pair of conductors coupled to a semiconductor material, with contact surfaces between each of the conductors and the semiconductor material, one of which contact surfaces adjoins a volume within the semiconductor material substantially between the conductors which volume has a length parallel to the contact surface, which length is greater than a width separating the contact surfaces; and (b) means for applying energy to a location within the volume's length, creating an energized portion and a non-energized portion within the volume's length which energy creates a plasma front and an electromagnetic signal within the conductors, and moving the location of energy application and resulting plasma front toward the non-energized portion of the volume's length.
Claim 26
Dependent Claim
36 words
The device of claim 23 wherein the means for moving the location of energy application moves the resulting plasma front at a speed within two orders of magnitude of the electromagnetic propagation speed within the conductors.
Claim 27
Dependent Claim
17 words
The device of claim 23 further comprising means for applying a voltage across the pair of conductors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-26 | 1998-12-26 | 1999-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-26 | 2002-12-26 | 2003-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-26 | 2006-12-26 | 2007-06-27 | $7700.00 | Window Closed / Lapsed |