US5427985A
Expired / Lapsed
US
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Amorphous, hydrogenated carbon as an insulator in device fabrication
Assignee: Qimonda AG
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Filing: 1994-03-09
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Granted: 1995-06-27
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Expires: 2014-03-09
Abstract
Abstract Amorphous, hydrogenated carbon (a-C:H) having a low interfacial state density is obtained when a-C:H layers that had been produced on a semiconductor substrate through plasma deposition are subjected to a hydrogen treatment at an increased pressure and increased temperature.
Inventors
- 👤 Albert Hammerschmidt
- 👤 Thomas Mandel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:06
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/56; C23C16/22; C23C16/26; H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01358; H10D64/01366; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
52 words
A method for preparing amorphous, hydrogenated carbon (a-C:H) having a low interfacial state density, comprising the steps of producing an a-C:H layer on a semiconductor substrate through plasma deposition, and treating the a-C:H layer with hydrogen at a pressure of 50 to 1500 bar and a temperature of 100° to 500° C.
Claim 2
Independent Claim
52 words
A method for preparing amorphous, hydrogenated carbon (a-C:H) having a low interfacial state density, comprising the steps of producing an a-C:H layer on a semiconductor substrate through plasma deposition, and treating the a-C:H layer with hydrogen at a pressure of 50 to 1500 bar and a temperature of 100° to 500° C.
Claim 3
Dependent Claim
15 words
The method according to claim 1 wherein an inert gas is added to the hydrogen.
Claim 4
Dependent Claim
14 words
The method according to claim 2 wherein the inert gas is a noble gas.
Claim 5
Dependent Claim
14 words
The method according to claim 3 wherein the noble gas is argon or helium.
Claim 6
Dependent Claim
19 words
The method according to claim 2 wherein the concentration of inert gas amounts to 1 to 50% by volume.
Claim 7
Dependent Claim
20 words
The method according to claim 1 wherein the hydrogen treatment is carried out within a time period of several hours.
Claim 8
Dependent Claim
19 words
The method according to claim 1 wherein the semiconductor substrate is silicon, silicon carbide, gallium arsenide or indium phosphide.
Claim 9
Independent Claim
56 words
A method for reducing the interfacial state density of an amorphous, hydrogenated carbon layer, comprising the step of treating the layer with hydrogen at a pressure of at least 50 bar and a temperature of at least 100° C. for a period of time which is sufficient to reduce the interfacial state density of the layer.
Claim 10
Independent Claim
56 words
A method for reducing the interfacial state density of an amorphous, hydrogenated carbon layer, comprising the step of treating the layer with hydrogen at a pressure of at least 50 bar and a temperature of at least 100° C. for a period of time which is sufficient to reduce the interfacial state density of the layer.
References Cited (Backward Citations)
US5055421A
Cited
US5196907A
Cited
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