US5424253A
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Method for manufacturing an inter-layer insulating film
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1993-03-04
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Granted: 1995-06-13
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Expires: 2013-03-04
Abstract
Abstract A method for manufacturing an inter-layer insulating film (ex. O 3 , TEOS or NSG) with a superior surface flatness is disclosed to solve the problem that the surface of the inter-layer film formed on a certain under-layer substrate reveals roughness due to the influence of the substrate. It is provided a method for manufacturing O 3 TEOS NSG film after doping nitrogen (N) atoms into the under-layer films, or after forming the under-layer films which contain nitrogen (N) atoms therein.
Inventors
- 👤 Takashi Usami
- 👤 Masaki Yoshimaru
- 👤 Kimiaki Shimokawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6302; H10P14/6316; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
82 words
A method for manufacturing an inter-layer insulating film comprising steps of: (a) preparing a semiconductor substrate; (b) forming a semiconductor material layer on a surface of the semiconductor substrate; (c) forming an under-layer in which nitrogen (N) atoms are introduced into the semiconductor substrate and the semiconductor material layer; and (d) forming a SiO 2 film as an inter-layer insulating film on the under-layer with a chemical vapor deposition (CVD) method utilizing a reaction of ozone (O 3 ) with tetraethoxy-silane (TEOS).
Claim 2
Independent Claim
82 words
A method for manufacturing an inter-layer insulating film comprising steps of: (a) preparing a semiconductor substrate; (b) forming a semiconductor material layer on a surface of the semiconductor substrate; (c) forming an under-layer in which nitrogen (N) atoms are introduced into the semiconductor substrate and the semiconductor material layer; and (d) forming a SiO 2 film as an inter-layer insulating film on the under-layer with a chemical vapor deposition (CVD) method utilizing a reaction of ozone (O 3 ) with tetraethoxy-silane (TEOS).
Claim 3
Dependent Claim
54 words
The method set forth in claim 1, wherein the step of forming the under-layer is performed in such a manner that the semiconductor substrate and the semiconductor material layer are exposed to a gas plasma generated by at least one gas selected from among NH 3 , N 2 O and N 2 .
Claim 4
Dependent Claim
48 words
The method set forth in claim 1, wherein the step of forming the under-layer is performed in such a manner that at least one gas selected from among NH 3 , N 2 O and N 2 is ion-implanted into the semiconductor substrate and the semiconductor material layer.
Claim 5
Dependent Claim
115 words
The method set forth in claim 1, wherein the step of forming the SiO 2 film is performed in such a manner that the semiconductor substrate and semiconductor material layer in which the under-layer is formed are processes so as to form the SiO 2 film to have a thickness of 5,000-10,000 Å, utilizing the CVD method under conditions of: (i) a mass flow rate of the TEOS being 1-2 l/min; (ii) a mass flow rate of an oxygen containing an ozone (O 3 ) being 5-10 l/min; (iii) a concentration of the O 3 being 75-130 g/m 3 ; (iv) a substrate temperature being 350°-450° C.; and (v) a pressure being 300 Torr--Atmospheric pressure.
Claim 6
Independent Claim
75 words
A method for manufacturing an inter-layer insulating film comprising steps of: (a) preparing a semiconductor substrate; (b) forming an element on the semiconductor substrate; (c) forming an insulating film containing N atoms as an under-layer on the semiconductor substrate and the element; and (d) forming a first SiO 2 film as an inter-layer insulating film on the under-layer with a chemical vapor deposition (CVD) utilizing a reaction of ozone (O 3 ) with tetraethoxy-silane (TEOS).
Claim 7
Independent Claim
75 words
A method for manufacturing an inter-layer insulating film comprising steps of: (a) preparing a semiconductor substrate; (b) forming an element on the semiconductor substrate; (c) forming an insulating film containing N atoms as an under-layer on the semiconductor substrate and the element; and (d) forming a first SiO 2 film as an inter-layer insulating film on the under-layer with a chemical vapor deposition (CVD) utilizing a reaction of ozone (O 3 ) with tetraethoxy-silane (TEOS).
Claim 8
Dependent Claim
61 words
The method set forth in claim 5, wherein the step of forming the insulating film is performed in such a manner that a low pressure chemical vapor deposition (LPCVD) method is applied which utilizes as a source gas either a gas mixture of SiH 4 and NH 3 or a gas mixture of SiH 2 Cl 2 and NH 3 .
Claim 9
Dependent Claim
65 words
The method set forth in claim 5, wherein the step of forming the insulating film is performed in such a manner that a LPCVD method is applied which utilizes as a source gas either a gas mixture of SiH 4 , NH 3 and N 2 O in combination or a gas mixture of SiH 2 Cl 2 , NH 3 and N 2 O.
Claim 10
Dependent Claim
59 words
The method set forth in claim 5, wherein the step of forming the insulating film is performed in such a manner that a plasma CVD method is applied which utilizes as a source gas either a gas mixture of SiH 4 , NH 3 and N 2 or a gas mixture of SiH 4 and N 2 in combination.
Claim 11
Dependent Claim
47 words
The method set forth in claim 5, wherein the step of forming the insulating film is performed in such a manner that a plasma CVD method is applied which utilizes as a source gas a gas mixture of SiH 4 , NH 3 and N 2 O.
Claim 12
Dependent Claim
96 words
The method set forth in claim 5, wherein the step of forming the insulating film comprises following steps of: (i) forming a second SiO 2 film with an atmospheric pressure (AP) CVD method utilizing as a source gas either a gas mixture of O 2 containing O 3 and TEOS in combination or a gas mixture of SiH 4 and O 2 ; and (ii) exposing the second SiO 2 film to a gas plasma generated with at least one kind of gas selected from among NH 3 , N 2 O and N 2 .
Claim 13
Dependent Claim
85 words
The method set forth in claim 5, wherein the step of forming the insulating film comprises following steps of: (i) forming a second SiO 2 film with an APCVD method utilizing as a source gas either a gas mixture of O 2 containing O 3 and TEOS or a gas mixture of SiH 4 and O 2 ; and (ii) ion-implanting at least one kind of gas selected from among NH 3 , N 2 O and N 2 into the second SiO 2 film.
Claim 14
Dependent Claim
89 words
The method set forth in claim 5, wherein the step of forming the insulating film comprises following steps of: (i) forming a second SiO 2 film with a plasma CVD method utilizing as a source gas either a gas mixture of SiH 4 and N 2 O or a gas mixture of O 2 and TEOS; and (ii) exposing the second SiO 2 film to a gas plasma generated with at least one kind of gas selected from among NH 3 , N 2 O and N 2 .
Claim 15
Dependent Claim
83 words
The method set forth in claim 5, wherein the step of forming the insulating film comprises following steps of: (i) forming a second SiO 2 film with a plasma CVD method utilizing as a source gas either a gas mixture of SiH 4 and N 2 O or a gas mixture of O 2 and TEOS; and (ii) ion-implanting at least one kind of gas selected from among NH 3 , N 2 O and N 2 into the second SiO 2 film.
Claim 16
Dependent Claim
116 words
The method set forth in claim 5, wherein the step of forming the first SiO 2 film is performed in such a manner that the semiconductor substrate and the element on which the under-layer is formed are processed so as to form the first SiO 2 film to have a thickness of 5,000-10,000 Å, utilizing the CVD method under conditions of: (i) a mass flow rate of the TEOS being 1-2 l/min; (ii) a mass flow rate of an oxygen containing an ozone (O 3 ) being 5-10 l/min; (iii) a concentration of the O 3 being 75-130 g/m 3 ; (iv) a substrate temperature being 350°-450° C.; and (v) a pressure being 300 Torr--Atmospheric pressure.
Claim 17
Dependent Claim
51 words
A method for manufacturing an inter-layer insulating film according to claim 1, wherein said step of forming a SiO 2 film comprises the step of forming a layer of nondoped silicate glass as the inter-layer insulating film on the under-layer by chemical vapor deposition utilizing the reaction of ozone with tetraethoxy-silane.
Claim 18
Independent Claim
74 words
A method for manufacturing a semiconductor structure having an inter-layer insulating film consisting of nondoped silicate glass, comprising the steps of: preparing a semiconductor substrate; forming an element on the semiconductor substrate; forming an under-layer in which nitrogen (N) atoms are introduced into the semiconductor substrate and the element; and forming the nondoped silicate glass as the inter-layer insulating film on the under-layer by chemical vapor deposition utilizing the reaction of ozone with tetraethoxy-silane.
Claim 19
Independent Claim
74 words
A method for manufacturing a semiconductor structure having an inter-layer insulating film consisting of nondoped silicate glass, comprising the steps of: preparing a semiconductor substrate; forming an element on the semiconductor substrate; forming an under-layer in which nitrogen (N) atoms are introduced into the semiconductor substrate and the element; and forming the nondoped silicate glass as the inter-layer insulating film on the under-layer by chemical vapor deposition utilizing the reaction of ozone with tetraethoxy-silane.
References Cited (Backward Citations)
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