JPS5776866A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1980-10-31
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Granted: —
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Expires: 2000-10-31
Abstract
Abstract PURPOSE:To prevent the degeneration of the surface of a silicon nitride film in the heat treatment at a high temperature of a semiconductor substrate by forming a SiO2 film on the surface of the silicon nitride film shaped onto the semiconductor substrate. CONSTITUTION:The SiO2 film 6 is formed on the surface of the Si3N4 film 3 selectively shaped onto the Si substrate 1 through a SiO2 layer 2 and oxidized, and plasma-etched. Accordingly, the degeneration of the surface of the Si3N4 film 3 resulting from the heat treatment at the high temperature can be prevented.
Inventors
- 👤 Masataka Shinguu
- 👤 Kazuaki Yamanochi
- 👤 Toru Inaba
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 17:47
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662
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