Method for manufacturing a non-volatile memory having a floating gate oxide type fet provided with a tunnel oxide film

Claim 1

A method for manufacturing a non-volatile memory having a Floating Gate Oxide field effect transistor and a selective transistor for selecting the Floating Gate Oxide field effect transistor, comprising the steps of: forming a floating gate on a tunnel insulating film overlying a semiconductor substrate, forming a selective gate for the selective transistor on an insulator thicker than the tunnel insulating film, implanting ions using the floating gate and the selective gate as a mask and then forming an impurity diffused layer in the substrate, forming an oxidation resistance layer over the floating gate, etching back the oxidation resistance layer so as to form an oxidation resistance film on a side wall of the floating gate, and forming an insulating film for a control gate on the floating gate by oxidation so as to form the control gate, wherein a thickness of the tunnel insulating film covered by the floating gate and the oxidation resistance layer remains constant.

Claim 2

A method for manufacturing a non-volatile memory having a Floating Gate Oxide field effect transistor and a selective transistor for selecting the Floating Gate Oxide field effect transistor, comprising the steps of: forming a floating gate on a tunnel insulating film overlying a semiconductor substrate, forming a selective gate for the selective transistor on an insulator thicker than the tunnel insulating film, implanting ions using the floating gate and the selective gate as a mask and then forming an impurity diffused layer in the substrate, forming an oxidation resistance layer over the floating gate, etching back the oxidation resistance layer so as to form an oxidation resistance film on a side wall of the floating gate, and forming an insulating film for a control gate on the floating gate by oxidation so as to form the control gate, wherein a thickness of the tunnel insulating film covered by the floating gate and the oxidation resistance layer remains constant.

Claim 4

A method for manufacturing a memory comprising: (a) forming an insulation film over a semiconductor substrate; (b) in an area of the insulation film, forming a tunnel oxide film that is thinner than the insulation film; (c) forming a floating gate electrode on the tunnel oxide film; (d) forming a selective gate electrode on the insulating film; (e) implanting ions to form diffused impurity regions in the substrate on either side of the floating gate electrode; (f) directly forming an oxidation resistance layer on sidewalls of the floating gate electrode; and (g) etching the oxidation resistance layer to form an oxidation resistance film; (h) thermally oxidizing the substrate and an upper portion of the floating gate electrode, wherein a thickness of the tunnel oxide film is maintained constant throughout thermal oxidation.

Claim 5

A method for manufacturing a memory comprising: (a) forming an insulation film over a semiconductor substrate; (b) in an area of the insulation film, forming a tunnel oxide film that is thinner than the insulation film; (c) forming a floating gate electrode on the tunnel oxide film; (d) forming a selective gate electrode on the insulating film; (e) implanting ions to form diffused impurity regions in the substrate on either side of the floating gate electrode; (f) directly forming an oxidation resistance layer on sidewalls of the floating gate electrode; and (g) etching the oxidation resistance layer to form an oxidation resistance film; (h) thermally oxidizing the substrate and an upper portion of the floating gate electrode, wherein a thickness of the tunnel oxide film is maintained constant throughout thermal oxidation.