US5422336A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Superconducting FET with Pr-Ba-Cu-O channel
Assignee: Fuji Electric Co Ltd
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Filing: 1993-09-22
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Granted: 1995-06-06
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Expires: 2013-09-22
Abstract
Abstract A superconducting transistor with superior withstand voltage having source region and a drain region formed of oxide superconductors 3, a PrBa 2 Cu 3 O 7-x layer 2 or an ScBa 2 Cu 3 O 7-x layer 2 forming an intermediate region sandwiched by the source and drain regions. The regions are disposed on a substrate 1. An insulation layer 4 is disposed on the intermediate region. A transistor uses the intermediate region as an insulator when the gate is turned off, and as a superconductor when the gate is turned on.
Inventors
- 👤 Koichi Tsuda
- 👤 Toshiyuki Matsui
- 👤 Takeshi Suzuki
- 👤 Hiroshi Kimura
- 👤 Takashi Ishii
- 👤 Akihiko Ohi
- 👤 Kazuo Mukae
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:49
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/205; H10N60/207; Y; Y10; Y10S; Y10S505/00; Y10S505/775; Y10S505/776; Y10S505/779
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
102 words
A superconducting device comprising: a source region, a drain region and an intermediate region disposed on a substrate, the intermediate region being arranged between the source region and the drain region such that the intermediate region is in direct contact with each of the source and drain regions; an insulation layer disposed on said intermediate region; a source electrode connected to said source region; a drain electrode connected to the drain region; and a gate electrode connected to the insulation layer, wherein the intermediate region comprises PrBa 2 Cu 3 O 7-x and the source and drain regions are p-type oxide superconductors.
Claim 2
Dependent Claim
102 words
A superconducting device comprising: a source region, a drain region and an intermediate region disposed on a substrate, the intermediate region being arranged between the source region and the drain region such that the intermediate region is in direct contact with each of the source and drain regions; an insulation layer disposed on said intermediate region; a source electrode connected to said source region; a drain electrode connected to the drain region; and a gate electrode connected to the insulation layer, wherein the intermediate region comprises PrBa 2 Cu 3 O 7-x and the source and drain regions are p-type oxide superconductors.
Claim 3
Dependent Claim
48 words
The superconducting device of claim 1, wherein the p-type oxide superconductor is an oxide of one of the following groups: La-Ba-Cu-O, La-Sr-Cu-O, Ln-Ba-Cu-O (wherein Ln is at least one of Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), Bi-Sr-Ca-Cu-O, Tl-Ba-Cu-O and Sr-Ca-Cu-O.
Claim 4
Dependent Claim
104 words
A superconducting device comprising: a source region, a drain region and an intermediate region disposed on a substrate, the intermediate region being arranged between the source region and the drain region such that the intermediate region is in direct contact with each of the source and drain regions; an insulation layer disposed on said intermediate region; a source electrode connected to said source region; a drain electrode connected to the drain region; and a gate electrode connected to the insulation layer; wherein the intermediate region comprises ScBa 2 Cu 3 O 7-x , and the source and the drain regions are p-type oxide superconductors.
Claim 5
Dependent Claim
104 words
A superconducting device comprising: a source region, a drain region and an intermediate region disposed on a substrate, the intermediate region being arranged between the source region and the drain region such that the intermediate region is in direct contact with each of the source and drain regions; an insulation layer disposed on said intermediate region; a source electrode connected to said source region; a drain electrode connected to the drain region; and a gate electrode connected to the insulation layer; wherein the intermediate region comprises ScBa 2 Cu 3 O 7-x , and the source and the drain regions are p-type oxide superconductors.
Claim 6
Dependent Claim
48 words
The superconducting device of claim 3, wherein the p-type oxide superconductor is an oxide of one of the following groups: La-Ba-Cu-O, La-Sr-Cu-O, Ln-Ba-Cu-O, (wherein Ln is at least one of Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), Bi-Sr-Ca-Cu-O, Tl-Ba-Cu-O and Sr-Ca-Cu-O.
References Cited (Backward Citations)
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