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US5250506A Expired / Lapsed US ⏱️ 0.0 years remaining

Superconductive switching element with semiconductor channel

Assignee: New Energy and Industrial Technology Development Organization
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Filing: 1991-01-29
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Granted: 1993-10-05
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Expires: 2011-01-29
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Abstract

Abstract A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.

Inventors

  • 👤 Shinichiroh Saitoh
  • 👤 Yoshinobu Tarutani
  • 👤 Tokuumi Fukazawa
  • 👤 Masahiko Hiratani
  • 👤 Toshikazu Nishino
  • 👤 Haruhiro Hasegawa
  • 👤 Ushio Kawabe
  • 👤 Kazumasa Takagi
  • 👤 Mitsuo Suga

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 23:16
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12; H10N60/124; H10N60/20; H10N60/205; H10N60/207

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 128 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductor material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦×≦0.5, and said oxide semiconductor material has the formula R' m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure identical with or similar to that of said oxide superconductor material.
Claim 2
Dependent Claim 128 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductor material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦×≦0.5, and said oxide semiconductor material has the formula R' m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure identical with or similar to that of said oxide superconductor material.
Claim 3
Dependent Claim 61 words
A superconductive element as defined in claim 1, wherein the first and the second superconductive electrodes are formed being spaced apart from each other at a predetermined distance in a surface region of said semiconductor film, and a gate electrode is formed on an insulation film provided on the surface of said semiconductor film between said first and second superconductive electrodes.
Claim 4
Dependent Claim 12 words
A superconductive element as defined in claim 1, wherein R is La.
Claim 5
Dependent Claim 12 words
A superconductive element as defined in claim 1, wherein R is Nd.
Claim 6
Dependent Claim 23 words
A superconductive element as defined in claim 1, wherein the first superconductive electrode, the semiconductor film and the second superconductive electrode are laminated.
Claim 7
Dependent Claim 23 words
A superconductive element as defined in claim 5, wherein the oxide superconductor material is Y 1 Ba 2 Cu 3 O 7-x (0≦×≦0.5).
Claim 8
Dependent Claim 36 words
A superconductive element as defined in claim 5, wherein the oxide semiconductor material is composed of R m Ba 3-m Cu 3 O y (R represents a rare earth element other than Pr, 1.3≦m≦1.5 and 6.8≦y≦7.2).
Claim 9
Dependent Claim 12 words
A superconductive element as defined in claim 7, wherein R is La.
Claim 10
Dependent Claim 12 words
A superconductive element as defined in claim 7, wherein R is Nd.
Claim 11
Dependent Claim 130 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductive material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦x≦0.5, and said oxide semiconductor material has the formula (R' n Pr 1-n ) m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 0.3≦n≦0.4, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure similar to that of said oxide superconductor material.
Claim 12
Dependent Claim 130 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductive material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦x≦0.5, and said oxide semiconductor material has the formula (R' n Pr 1-n ) m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 0.3≦n≦0.4, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure similar to that of said oxide superconductor material.
Claim 13
Dependent Claim 14 words
A superconductive element as defined in claim 10, wherein R is Y or Nd.
Claim 14
Dependent Claim 57 words
A superconductive element as defined in claim 10, wherein the first and second superconductive electrodes are formed being spaced apart from each other within a surface region of said semiconductor film, and a gate electrode is formed by way of an insulation film on the surface of said semiconductor film between said first and second superconductive electrodes.
Claim 15
Dependent Claim 23 words
A superconductive element as defined in claim 10, wherein the first superconductive electrode, the semiconductor film and the second superconductive electrode are laminated.

References Cited (Backward Citations)

US3500137A Cited
US4888629A Cited
US4983573A Cited
US4948779A Cited
JPH01268075A Cited
US5087605A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-10-04 1997-04-05 1997-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-10-04 2001-04-05 2001-10-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-10-04 2005-04-05 2005-10-05 $7700.00 Window Closed / Lapsed

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