Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
128 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductor material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦×≦0.5, and said oxide semiconductor material has the formula R' m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure identical with or similar to that of said oxide superconductor material.
Claim 2
Dependent Claim
128 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductor material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦×≦0.5, and said oxide semiconductor material has the formula R' m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure identical with or similar to that of said oxide superconductor material.
Claim 3
Dependent Claim
61 words
A superconductive element as defined in claim 1, wherein the first and the second superconductive electrodes are formed being spaced apart from each other at a predetermined distance in a surface region of said semiconductor film, and a gate electrode is formed on an insulation film provided on the surface of said semiconductor film between said first and second superconductive electrodes.
Claim 4
Dependent Claim
12 words
A superconductive element as defined in claim 1, wherein R is La.
Claim 5
Dependent Claim
12 words
A superconductive element as defined in claim 1, wherein R is Nd.
Claim 6
Dependent Claim
23 words
A superconductive element as defined in claim 1, wherein the first superconductive electrode, the semiconductor film and the second superconductive electrode are laminated.
Claim 7
Dependent Claim
23 words
A superconductive element as defined in claim 5, wherein the oxide superconductor material is Y 1 Ba 2 Cu 3 O 7-x (0≦×≦0.5).
Claim 8
Dependent Claim
36 words
A superconductive element as defined in claim 5, wherein the oxide semiconductor material is composed of R m Ba 3-m Cu 3 O y (R represents a rare earth element other than Pr, 1.3≦m≦1.5 and 6.8≦y≦7.2).
Claim 9
Dependent Claim
12 words
A superconductive element as defined in claim 7, wherein R is La.
Claim 10
Dependent Claim
12 words
A superconductive element as defined in claim 7, wherein R is Nd.
Claim 11
Dependent Claim
130 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductive material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦x≦0.5, and said oxide semiconductor material has the formula (R' n Pr 1-n ) m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 0.3≦n≦0.4, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure similar to that of said oxide superconductor material.
Claim 12
Dependent Claim
130 words
A superconductive device comprising: first and second superconductive electrodes each composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material interposed in the current path between said first and second superconductive electrodes adjacent to said first and second superconductive electrodes, said current path defining a channel having a length between 0.1 and 1.0 microns, wherein said oxide superconductive material has the formula RBa 2 Cu 3 O 7-x where R represents a rare earth element and 0≦x≦0.5, and said oxide semiconductor material has the formula (R' n Pr 1-n ) m Ba 3-m Cu 3 O y where R' represents a rare earth element other than Pr, 0.3≦n≦0.4, 1.3≦m≦1.5, and 6.8≦y≦7.2, and has a crystal structure similar to that of said oxide superconductor material.
Claim 13
Dependent Claim
14 words
A superconductive element as defined in claim 10, wherein R is Y or Nd.
Claim 14
Dependent Claim
57 words
A superconductive element as defined in claim 10, wherein the first and second superconductive electrodes are formed being spaced apart from each other within a surface region of said semiconductor film, and a gate electrode is formed by way of an insulation film on the surface of said semiconductor film between said first and second superconductive electrodes.
Claim 15
Dependent Claim
23 words
A superconductive element as defined in claim 10, wherein the first superconductive electrode, the semiconductor film and the second superconductive electrode are laminated.