US5422295A
Expired / Lapsed
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Method for forming a semiconductor memory device having a vertical multi-layered storage electrode
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-12-10
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Granted: 1995-06-06
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Expires: 2013-12-10
Abstract
Abstract A manufacturing method for a semiconductor memory device including a capacitor having a double fin-shaped structure is provided, wherein a storage electrode is formed by applying a thick planar material capable of being wet-etched between the double fins consisting of conductive layers. The storage electrode is formed by forming a thin, high temperature oxide film having an etching rate which is great. Thus, the resulting memory cell's topography is improved and damage to the storage electrode is decreased.
Inventors
- 👤 Young-jae Choi
- 👤 Tae-Young Chung
- 👤 Jong-woo Park
- 👤 Young-pil Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:32
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/714; H10P30/202; H10P30/204; H10P30/208; H10P30/209; H10D1/01; H10D1/041; H10D1/042; H10D1/043
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
207 words
A method for manufacturing a storage capacitor electrode in a semiconductor memory device comprising the steps of: forming a source and a drain region of a transistor in a semiconductor substrate; forming a first material layer above said transistor; forming a first conductive layer above said first material layer; forming a second material layer above said first conductive layer, said second material layer having a different etch sensitivity than said first conductive layer; etching a contact hole through said second material layer, through said first conductive layer and through said first material layer to expose at least one of said source and drain region of said transistor, said etch step leaving a protrusion of said first conductive layer in said contact hole, said contact hole etching step controlling a difference between an upper contact hole width located over said first conductive layer and a lower contact hole width located under said first conductive layer, said difference being controlled in accordance with a thickness of said first conductive layer and an etching time of said first conductive layer; forming a second conductive layer on said first material layer and on exposed surfaces within said contact hole; and processing said second conductive layer to complete a storage capacitor electrode.
Claim 2
Independent Claim
207 words
A method for manufacturing a storage capacitor electrode in a semiconductor memory device comprising the steps of: forming a source and a drain region of a transistor in a semiconductor substrate; forming a first material layer above said transistor; forming a first conductive layer above said first material layer; forming a second material layer above said first conductive layer, said second material layer having a different etch sensitivity than said first conductive layer; etching a contact hole through said second material layer, through said first conductive layer and through said first material layer to expose at least one of said source and drain region of said transistor, said etch step leaving a protrusion of said first conductive layer in said contact hole, said contact hole etching step controlling a difference between an upper contact hole width located over said first conductive layer and a lower contact hole width located under said first conductive layer, said difference being controlled in accordance with a thickness of said first conductive layer and an etching time of said first conductive layer; forming a second conductive layer on said first material layer and on exposed surfaces within said contact hole; and processing said second conductive layer to complete a storage capacitor electrode.
Claim 3
Dependent Claim
25 words
A method according to claim 1, wherein said step of forming said first material layer comprises a step of forming a high temperature oxide film.
Claim 4
Dependent Claim
33 words
A method according to claim 1, wherein said step of forming said second material layer comprises a step of forming a high temperature oxide film to a thickness of approximately 1,000Å or less.
Claim 5
Dependent Claim
32 words
A method according to claim 1, wherein said step of forming said first conductive layer comprises a step of forming a polysilicon material to a thickness of about 500Å to about 3000Å.
Claim 6
Dependent Claim
31 words
A method according to claim 1, wherein said step of forming said second material layer comprises a step of forming a borophospho-silicate glass to a thickness of less than about 2500Å.
Claim 7
Dependent Claim
76 words
A method according to claim 1, wherein said step of processing said second conductive layer comprises steps of: etching a portion of said second conductive layer to expose a portion of said second material layer at a location away from said contact hole; etching portions of said second material layer to expose a portion of said first conductive layer at a location away from said contact hole; and etching a portion of said first conductive layer.
Claim 8
Dependent Claim
40 words
A method according to claim 6 wherein said step of etching portions of said second material layer comprises a step of wet-etching using a solution chosen from a group consisting of an HF solution and a buffered oxide etchant solution.
Claim 9
Dependent Claim
77 words
A method according to claim 1, wherein said step of processing said second conductive layer comprises steps of: applying a patterned layer of photoresist material above said second conductive layer; etching a portion of said second conductive layer using said photoresist as a mask to expose a portion of said second material layer at a location away from said contact hole; baking said photoresist material; and etching portions of said second material layer and first conductive layer.
Claim 10
Independent Claim
195 words
A method for manufacturing an electrode for a storage capacitor in a semiconductor memory device comprising the steps of: forming a source and a drain region of a transistor in a semiconductor substrate; forming a first material layer above said transistor; forming a first conductive layer above said first material layer; forming a second material layer above said first conductive layer; forming a contact hole through said second material layer, through said first conductive layer and through said first material layer to expose at least one of said source and drain region of said transistor, said etch step leaving a protrusion of said first conductive layer in said contact hole, said contact hole formation step controlling a difference between an upper contact hole width located over said first conductive layer and a lower contact hole width located under said first conductive layer, said difference being controlled in accordance with a thickness of said first conductive layer and an etching time of said first conductive layer; forming a second conductive layer on said second material layer and on exposed surfaces within said contact hole; processing said second conductive layer to complete a first storage capacitor electrode.
Claim 11
Independent Claim
195 words
A method for manufacturing an electrode for a storage capacitor in a semiconductor memory device comprising the steps of: forming a source and a drain region of a transistor in a semiconductor substrate; forming a first material layer above said transistor; forming a first conductive layer above said first material layer; forming a second material layer above said first conductive layer; forming a contact hole through said second material layer, through said first conductive layer and through said first material layer to expose at least one of said source and drain region of said transistor, said etch step leaving a protrusion of said first conductive layer in said contact hole, said contact hole formation step controlling a difference between an upper contact hole width located over said first conductive layer and a lower contact hole width located under said first conductive layer, said difference being controlled in accordance with a thickness of said first conductive layer and an etching time of said first conductive layer; forming a second conductive layer on said second material layer and on exposed surfaces within said contact hole; processing said second conductive layer to complete a first storage capacitor electrode.
Claim 12
Dependent Claim
25 words
A method according to claim 9, wherein said step of forming said second material layer comprises a step of forming a high temperature oxide film.
Claim 13
Dependent Claim
43 words
A method according to claim 9, wherein said step of forming said contact hole controls said difference in width by controlling a width of said contact hole by adjusting an amount of a polymeric material generated when said second material layer is etched.
Claim 14
Dependent Claim
43 words
A method according to claim 9, wherein said step of forming said contact hole includes a step of etching said second material layer by wet-etching using a solution chosen from a group consisting of an HF solution and a buffered oxide etchant solution.
Claim 15
Dependent Claim
32 words
A method according to claim 1, wherein said step of forming said second material layer comprises a step of forming a high temperature oxide to a thickness of less than about 1000Å.
Claim 16
Independent Claim
225 words
A method for manufacturing a storage capacitor in a semiconductor memory device comprising the steps of: forming a source and a drain region of a transistor in a semiconductor substrate; forming a layer of high temperature oxide above said transistor; forming a first conductive layer above said layer of high temperature oxide; forming a layer of borophospho-silicate glass above said first conductive layer; etching a contact hole through said layer of borophosphto-silicate glass, through said first conductive layer and through said layer of high temperature oxide to expose at least one of said source and drain region of said transistor, said etch step leaving a protrusion of said first conductive layer in said contact hole, said contact hole etching step controlling a difference between an upper contact hole width located over said first conductive layer and a lower contact hole width located under said first conductive layer, said difference being controlled in accordance with a thickness of said first conductive layer and etching time of said first conductive layer; forming a second conductive layer on said layer of high temperature oxide and on exposed surfaces within said contact hole; and processing said second conductive layer to complete a storage capacitor electrode; forming a dielectric film above said storage capacitor electrode; and forming a second electrode separated from said storage capacitor electrode by said dielectric film.
Claim 17
Independent Claim
225 words
A method for manufacturing a storage capacitor in a semiconductor memory device comprising the steps of: forming a source and a drain region of a transistor in a semiconductor substrate; forming a layer of high temperature oxide above said transistor; forming a first conductive layer above said layer of high temperature oxide; forming a layer of borophospho-silicate glass above said first conductive layer; etching a contact hole through said layer of borophosphto-silicate glass, through said first conductive layer and through said layer of high temperature oxide to expose at least one of said source and drain region of said transistor, said etch step leaving a protrusion of said first conductive layer in said contact hole, said contact hole etching step controlling a difference between an upper contact hole width located over said first conductive layer and a lower contact hole width located under said first conductive layer, said difference being controlled in accordance with a thickness of said first conductive layer and etching time of said first conductive layer; forming a second conductive layer on said layer of high temperature oxide and on exposed surfaces within said contact hole; and processing said second conductive layer to complete a storage capacitor electrode; forming a dielectric film above said storage capacitor electrode; and forming a second electrode separated from said storage capacitor electrode by said dielectric film.
Claim 18
Dependent Claim
101 words
A method according to claim 14, wherein said step of processing said second conductive layer to complete said storage capacitor electrode comprises steps of: etching a portion of said second conductive layer with a first etch process to expose a portion of said layer of borophospho-silicate glass at a location away from said contact hole; etching portions of said layer of borophospho-silicate glass with a second etch process to expose a portion of said layer of high temperature oxide at a location away from said contact hole; and etching a portion of said first conductive layer with a third etch process.
References Cited (Backward Citations)
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