US5420049A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of controlling photoemission from porous silicon using ion implantation
Assignee: CHIEF OF NAVAL RESEARCH
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Filing: 1993-09-09
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Granted: 1995-05-30
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Expires: 2013-09-09
Abstract
Abstract This invention describes a method of controlling light emission from porous silicon and porous silicon devices using ion implantation. The emitted light intensity can be either selectively increased or decreased by suitable processing of the silicon prior to the fabrication of the porous layer. Amorphizing the silicon prior to the fabrication of the porous layer quenches the light emission. Ion implantation with doses below the amorphization level enhances the intensity of the emitted light of the subsequently fabricated porous layer.
Inventors
- 👤 Stephen D. Russell
- 👤 Wadad B. Dubbelday
- 👤 Randy L. Shimabukuro
- 👤 Diane M. Szaflarski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:51
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10H20/8264; Y; Y10; Y10S; Y10S438/00; Y10S438/96
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
55 words
A method of increasing photoemission from porous materials comprising: implanting ions into a region of a starting material at an ion dose below the amorphization dose of said starting material to effect implant damage therein; and forming a porous material in said region of said starting material containing said ions thereby increasing the photo emission.
Claim 2
Independent Claim
55 words
A method of increasing photoemission from porous materials comprising: implanting ions into a region of a starting material at an ion dose below the amorphization dose of said starting material to effect implant damage therein; and forming a porous material in said region of said starting material containing said ions thereby increasing the photo emission.
Claim 3
Dependent Claim
27 words
A method according to claim 1, further including: maintaining said starting material at a cooling temperature to prevent self annealing of said starting material during said implanting.
Claim 4
Independent Claim
32 words
A method according to claims 1 or 2 wherein said implanting is performed at increasing levels up to said amorphization dose to provide for corresponding levels of photoemission from said porous material.
Claim 5
Independent Claim
12 words
A method according to claims 2 wherein said temperature is -30° C.
Claim 6
Dependent Claim
29 words
A method according to claim 1 or 2 wherein said starting material is silicon, said ions are Si 28 and said amorphization dose is 2.64×10 14 cm -2 .
Claim 7
Dependent Claim
28 words
A method according to claim 1 or 2 wherein said starting material is selected from the group consisting of silicon, germanium, silicon carbide, silicon-germanium alloys, and other semiconductors.
Claim 8
Independent Claim
33 words
A method according to claims 1 or 2 wherein said forming a porous material relies upon fabrication techniques selected from the group of chemical stain etching, electrochemical etching, photochemical etching and photoelectrochemical etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-29 | 1998-11-28 | 1999-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-29 | 2002-11-28 | 2003-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-29 | 2006-11-28 | 2007-05-30 | $7700.00 | Window Closed / Lapsed |