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US5418387A
Expired / Lapsed
US
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Solid-state imaging device with nand cell structure
Assignee: Toshiba Corp
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Filing: 1993-12-27
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Granted: 1995-05-23
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Expires: 2013-12-27
Abstract
Abstract A solid-state imaging device includes a semiconductor substrate, an array of cells on the substrate, a plurality of vertical charge transfer sections extending in a first direction on the substrate, and a horizontal charge transfer section extending in a second direction transverse to the first direction on the substrate and being coupled to the vertical charge transfer section. The cell array includes a plurality of columns of cells that are associated with a corresponding one of the vertical transfer sections. The cell columns include a predetermined number of spaced-part cells that are series-connected along the second direction to constitute a NAND type cell structure. At least one cell-to-cell charge transfer electrode overlies a channel region as defined between adjacent ones of the NAND cells in the substrate.
Inventors
- 👤 Nobuo Nakamura
- 👤 Nahoko Endo
- 👤 Yoshiyuki Matsunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:11
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/159; H10F39/153
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
102 words
An image sensing device comprising: a substrate; an array of cells on said substrate; a plurality of spaced-apart first charge transfer sections extending in a first direction on said substrate; a second charge transfer section extending in a second direction transverse to the first direction on said substrate, and being coupled to said first charge transfer sections; and said array of cells including plural groups of cells, each said group of cells having a gate shared by adjacent cells and arranged along the second direction with one of said groups of cells between each adjacent pair of said first charge transfer sections.
Claim 2
Dependent Claim
102 words
An image sensing device comprising: a substrate; an array of cells on said substrate; a plurality of spaced-apart first charge transfer sections extending in a first direction on said substrate; a second charge transfer section extending in a second direction transverse to the first direction on said substrate, and being coupled to said first charge transfer sections; and said array of cells including plural groups of cells, each said group of cells having a gate shared by adjacent cells and arranged along the second direction with one of said groups of cells between each adjacent pair of said first charge transfer sections.
Claim 3
Dependent Claim
15 words
The device according to claim 1, wherein said cells of each said group are series-connected.
Claim 4
Dependent Claim
39 words
The device according to claim 1, wherein said cells of each said group are electrically connected in series with each other, thereby to exhibit a NAND cell structure associated with a corresponding one of said first charge transfer sections.
Claim 5
Dependent Claim
82 words
The device according to claim 3, wherein each said group of cells include a first cell adjacent to said corresponding one of said first charge transfer sections, and a second cell neighboring to said first cell at an increased distance from said corresponding one of said first charge transfer sections, and wherein said device further comprises: read means for reading a charge packet out of said second cell through said first cell toward said corresponding one of said first charge transfer sections.
Claim 6
Dependent Claim
47 words
The device according to claim 4, wherein said read means reads out the charge packet from said second cell through said first cell, after causing a charge packet stored in said first cell to be read out toward said corresponding one of said first charge transfer sections.
Claim 7
Dependent Claim
15 words
The device according to claim 5, wherein each of said cells includes a photosensitive diode.
Claim 8
Dependent Claim
38 words
The device according to claim 5, further comprising: a photoconductive layer overlying said array of cells; lead electrode means for electrically connecting said photoconductive layer to said cells; and each of said cells including a charge storage diode.
Claim 9
Dependent Claim
16 words
The device according to claim 7, wherein said charge storage diode includes a PN junction diode.
Claim 10
Dependent Claim
99 words
A solid-state imaging device comprising: a semiconductor substrate: an array of cells on said substrate; a plurality of parallel vertical charge transfer sections extending in a first direction on said substrate; and a horizontal charge transfer section extending in a second direction transverse to the first direction on said substrate, and being coupled to said vertical charge transfer sections; wherein said array of cells includes a separate plurality of cell columns associated with each said vertical charge transfer section, and each said plurality of cell columns includes a preselected number of cells that are series-connected in the second direction.
Claim 11
Dependent Claim
99 words
A solid-state imaging device comprising: a semiconductor substrate: an array of cells on said substrate; a plurality of parallel vertical charge transfer sections extending in a first direction on said substrate; and a horizontal charge transfer section extending in a second direction transverse to the first direction on said substrate, and being coupled to said vertical charge transfer sections; wherein said array of cells includes a separate plurality of cell columns associated with each said vertical charge transfer section, and each said plurality of cell columns includes a preselected number of cells that are series-connected in the second direction.
Claim 12
Dependent Claim
29 words
The device according to claim 9, wherein said preselected number of cells include a first cell and a second cell that are connected to provide a NAND cell section.
Claim 13
Dependent Claim
27 words
The device according to claim 10, further comprising: a cell-to-cell charge transfer electrode overlying a channel region defined between adjacent ones of said first and second cells.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-22 | 1998-11-21 | 1999-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-22 | 2002-11-21 | 2003-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-22 | 2006-11-21 | 2007-05-23 | $7700.00 | Window Closed / Lapsed |