US5417802A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit manufacturing
Assignee: AT&T Inc
•
Filing: 1994-03-18
•
Granted: 1995-05-23
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Expires: 2014-03-18
Abstract
Abstract The addition of ligands for chelating Group I and Group II ions to organic solvents used for photoresist removal and etched conductor cleaning enhances the shelf life of these solvents. Furthermore, mobile ion contamination of integrated circuits processed with ligands modified organic solvents is reduced.
Inventors
- 👤 Yaw S. Obeng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:18
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/422; G03F7/425
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
22 words
A material comprising: an organic solvent capable of photoresist removal together with a ligand for chelating Group I and Group II ions.
Claim 2
Dependent Claim
22 words
A material comprising: an organic solvent capable of photoresist removal together with a ligand for chelating Group I and Group II ions.
Claim 3
Dependent Claim
38 words
A material comprising: an organic solvent capable of removing polymeric material remaining on metal conductors after said conductors have been etched in the presence of photoresist, together with a ligand for chelating Group I and Group II ions.
Claim 4
Dependent Claim
38 words
A material comprising: an organic solvent capable of removing polymeric material remaining on metal conductors after said conductors have been etched in the presence of photoresist, together with a ligand for chelating Group I and Group II ions.
Claim 5
Dependent Claim
22 words
The material of claim 1 or claim 2 wherein said ligand is chosen from the group consisting of crown ethers and cyclodextrines.
Claim 6
Independent Claim
29 words
A method of integrated circuit fabrication comprising: removing patterned photoresist from etched features utilizing an organic solvent together with a ligand for chelating Group I and Group II ions.
Claim 7
Independent Claim
29 words
A method of integrated circuit fabrication comprising: removing patterned photoresist from etched features utilizing an organic solvent together with a ligand for chelating Group I and Group II ions.
Claim 8
Independent Claim
27 words
A method of integrated circuit fabrication comprising: rinsing etched metal conductors with an organic solvent together with a ligand for chelating Group I and Group II ions.
Claim 9
Independent Claim
27 words
A method of integrated circuit fabrication comprising: rinsing etched metal conductors with an organic solvent together with a ligand for chelating Group I and Group II ions.
Claim 10
Dependent Claim
22 words
The method of claim 4 or claim 5 wherein said ligands are chosen from the group consisting of crown ethers and cyclodextrines.
Claim 11
Dependent Claim
28 words
The method of claim 4 wherein said etched features are formed over a substrate, and said substrate is chosen from the group consisting of oxides, metals, and semiconductors.
Claim 12
Dependent Claim
28 words
The method of claim 5 wherein said metal conductors are formed over a substrate, and said substrate is chosen from the group consisting of oxides, metals, and semiconductors.
References Cited (Backward Citations)
US3813309A
Cited
US3871929A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-22 | 1998-11-21 | 1999-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-22 | 2002-11-21 | 2003-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-22 | 2006-11-21 | 2007-05-23 | $7700.00 | Window Closed / Lapsed |