US5416031A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing Bi-CMOS transistors
Assignee: Sony Corp
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Filing: 1993-09-28
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Granted: 1995-05-16
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Expires: 2013-09-28
Abstract
Abstract In production of a Bi-CMOS semiconductor device, when forming a lateral PNP transistor in a bipolar section, an oxide film is deposited on this base area to prevent etching damages such as those in forming an LDD spacer for a MOS section, thus degradation of the lateral PNP bipolar transistor and drop of yield in production thereof being prevented and a high performance (low cost) Bi-CMOS LSI being realized.
Inventors
- 👤 Hiroyuki Miwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:30
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
176 words
A method of producing semiconductor devices comprising a step of depositing a first insulating film on a semiconductor substrate, a step of depositing a first conductive film, a step of depositing a second conducive film, a step of processing a laminated construction comprising the first insulating film, and the first and second conductive films in a state where at least a portion for forming a base is covered by the laminated construction, a step of processing a laminated construction comprising the first and second conductive films in a state where at least one end of said second conductive film is on the semiconductor substrate, a step of forming a side wall comprising a second insulating film, a step of forming a collector by means of ion implantation using said laminated construction comprising the first insulating film, the first and the second conductive films and said side wall comprising said second insulating film as a mask, and a step of forming an emitter by diffusing impurities from said laminated construction comprising the first and second conductive films.
Claim 2
Independent Claim
176 words
A method of producing semiconductor devices comprising a step of depositing a first insulating film on a semiconductor substrate, a step of depositing a first conductive film, a step of depositing a second conducive film, a step of processing a laminated construction comprising the first insulating film, and the first and second conductive films in a state where at least a portion for forming a base is covered by the laminated construction, a step of processing a laminated construction comprising the first and second conductive films in a state where at least one end of said second conductive film is on the semiconductor substrate, a step of forming a side wall comprising a second insulating film, a step of forming a collector by means of ion implantation using said laminated construction comprising the first insulating film, the first and the second conductive films and said side wall comprising said second insulating film as a mask, and a step of forming an emitter by diffusing impurities from said laminated construction comprising the first and second conductive films.
Claim 3
Dependent Claim
21 words
A method of producing semiconductor devices according to claim 1 each comprising a bipolar transistor section and a MOS transistor section.
Claim 4
Dependent Claim
33 words
A method of producing semiconductor devices as claimed in claim 2, wherein an insulating film for the bipolar transistor section is deposited simultaneously with a gate insulating film for the MOS transistor section.
Claim 5
Independent Claim
117 words
A method of producing semiconductor devices comprising a step of depositing a laminated film comprising a first insulating film and a conductive film on a semiconductor substrate, a step of removing said laminated film by means of etching and leaving a portion thereof, a step of depositing a pair of conductive films each covering at lest one end of said laminated film, and a step of forming a second insulating film on an entire surface of the substrate, then forming a side wall in at least one end section of said pair of conductive films by means of anisotropic etching and simultaneously filling up a space between said pair of conductive films with a third insulating film.
Claim 6
Independent Claim
117 words
A method of producing semiconductor devices comprising a step of depositing a laminated film comprising a first insulating film and a conductive film on a semiconductor substrate, a step of removing said laminated film by means of etching and leaving a portion thereof, a step of depositing a pair of conductive films each covering at lest one end of said laminated film, and a step of forming a second insulating film on an entire surface of the substrate, then forming a side wall in at least one end section of said pair of conductive films by means of anisotropic etching and simultaneously filling up a space between said pair of conductive films with a third insulating film.
Claim 7
Independent Claim
140 words
A method of producing semiconductor devices comprising a step of forming a laminated film comprising a first insulating film and a conducive film on a semiconductor substrate, a step of removing said laminated film by means of etching and leaving a portion thereof, a step of depositing a pair of conductive films each covering at least one end section of said laminated film respectively, a step of forming a second insulating film on an entire surface of the substrate, then forming a side wall in at least one end section of said pair of conductive films by means of anisotropic etching and simultaneously filling up a space between said pair of conductive films with a third insulating film, and a step of diffusing impurities having a conduction type different from that of the substrate from said pair of conductive films.
Claim 8
Independent Claim
140 words
A method of producing semiconductor devices comprising a step of forming a laminated film comprising a first insulating film and a conducive film on a semiconductor substrate, a step of removing said laminated film by means of etching and leaving a portion thereof, a step of depositing a pair of conductive films each covering at least one end section of said laminated film respectively, a step of forming a second insulating film on an entire surface of the substrate, then forming a side wall in at least one end section of said pair of conductive films by means of anisotropic etching and simultaneously filling up a space between said pair of conductive films with a third insulating film, and a step of diffusing impurities having a conduction type different from that of the substrate from said pair of conductive films.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-15 | 1998-11-14 | 1999-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-15 | 2002-11-14 | 2003-05-16 | $3760.00 | Window Closed / Lapsed |
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